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公开(公告)号:US20090057739A1
公开(公告)日:2009-03-05
申请号:US12230448
申请日:2008-08-28
申请人: Hiroshi Iwai , Takeo Hattori , Kazuo Tsutsui , Kuniyuki Kakushima , Parhat Ahmet , Jaeyeol Song , Masaki Yoshimaru , Yasuyoshi Mishima , Tomonori Aoyama , Hiroshi Oji , Yoshitake Kato
发明人: Hiroshi Iwai , Takeo Hattori , Kazuo Tsutsui , Kuniyuki Kakushima , Parhat Ahmet , Jaeyeol Song , Masaki Yoshimaru , Yasuyoshi Mishima , Tomonori Aoyama , Hiroshi Oji , Yoshitake Kato
IPC分类号: H01L29/78 , H01L21/3205
CPC分类号: H01L29/517 , C23C14/021 , C23C14/024 , C23C14/08 , C23C14/18 , C23C14/30 , H01L21/28158 , H01L21/28255 , H01L21/31604 , H01L29/78
摘要: The Ge channel device comprises: a Ge channel layer (2); a Si-containing interface layer (4) formed on the Ge channel layer (2); a La2O3 layer (6) formed on the interface layer (4); and an electrically conductive layer (8) formed on the La2O3 layer (6). In this device, the Si-containing interface layer (4) functions to suppress the diffusion of Ge atoms into the La2O3 layer (6) and thereby prevents the formation of Ge oxide in the La2O3 layer (6); accordingly, a Ge channel device whose C-V characteristic exhibits only a small hysteresis can be achieved.
摘要翻译: Ge沟道器件包括:Ge沟道层(2); 形成在所述Ge沟道层(2)上的含Si界面层(4); 在所述界面层(4)上形成的La 2 O 3层(6); 和形成在La 2 O 3层(6)上的导电层(8)。 在该器件中,含Si界面层(4)用于抑制Ge原子扩散到La2O3层(6)中,从而防止La2O3层(6)中Ge氧化物的形成; 因此,可以实现其C-V特性仅具有小滞后的Ge通道器件。