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公开(公告)号:US20090057739A1
公开(公告)日:2009-03-05
申请号:US12230448
申请日:2008-08-28
申请人: Hiroshi Iwai , Takeo Hattori , Kazuo Tsutsui , Kuniyuki Kakushima , Parhat Ahmet , Jaeyeol Song , Masaki Yoshimaru , Yasuyoshi Mishima , Tomonori Aoyama , Hiroshi Oji , Yoshitake Kato
发明人: Hiroshi Iwai , Takeo Hattori , Kazuo Tsutsui , Kuniyuki Kakushima , Parhat Ahmet , Jaeyeol Song , Masaki Yoshimaru , Yasuyoshi Mishima , Tomonori Aoyama , Hiroshi Oji , Yoshitake Kato
IPC分类号: H01L29/78 , H01L21/3205
CPC分类号: H01L29/517 , C23C14/021 , C23C14/024 , C23C14/08 , C23C14/18 , C23C14/30 , H01L21/28158 , H01L21/28255 , H01L21/31604 , H01L29/78
摘要: The Ge channel device comprises: a Ge channel layer (2); a Si-containing interface layer (4) formed on the Ge channel layer (2); a La2O3 layer (6) formed on the interface layer (4); and an electrically conductive layer (8) formed on the La2O3 layer (6). In this device, the Si-containing interface layer (4) functions to suppress the diffusion of Ge atoms into the La2O3 layer (6) and thereby prevents the formation of Ge oxide in the La2O3 layer (6); accordingly, a Ge channel device whose C-V characteristic exhibits only a small hysteresis can be achieved.
摘要翻译: Ge沟道器件包括:Ge沟道层(2); 形成在所述Ge沟道层(2)上的含Si界面层(4); 在所述界面层(4)上形成的La 2 O 3层(6); 和形成在La 2 O 3层(6)上的导电层(8)。 在该器件中,含Si界面层(4)用于抑制Ge原子扩散到La2O3层(6)中,从而防止La2O3层(6)中Ge氧化物的形成; 因此,可以实现其C-V特性仅具有小滞后的Ge通道器件。
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公开(公告)号:US07259409B2
公开(公告)日:2007-08-21
申请号:US10665524
申请日:2003-09-22
申请人: Hideomi Koinuma , Jeong-Hwan Song , Toyohiro Chikyo , Young Zo Yoo , Parhat Ahmet , Yoshinori Konishi , Yoshiyuki Yonezawa
发明人: Hideomi Koinuma , Jeong-Hwan Song , Toyohiro Chikyo , Young Zo Yoo , Parhat Ahmet , Yoshinori Konishi , Yoshiyuki Yonezawa
IPC分类号: H01L29/739 , H01L31/00
CPC分类号: H01L29/267 , C30B23/02 , C30B29/46 , H01L21/02381 , H01L21/02458 , H01L21/02474 , H01L21/02485 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L29/2003 , H01L29/22 , H01L33/28
摘要: A thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and a compound thin film with ionic bonding, which is formed on the metal sulfide layer by epitaxial growth. Alternatively, a thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and at least two compound thin films with ionic bonding, which are formed on the metal sulfide layer by epitaxial growth. For example, (11 20) surface AlN/MnS/Si (100) thin films formed by successively stacking a MnS layer (about 50 nm thick) and an AlN layer (about 1000 nm thick) on a single crystal Si (100) substrate, are used as a substrate, and a (11 20) surface GaN layer (about 100 nm thick) operating as a light emitting layer is formed on the substrate, thereby fabricating a thin film device.
摘要翻译: 薄膜器件包括通过外延生长在单晶硅衬底上形成的金属硫化物层; 和通过外延生长在金属硫化物层上形成的具有离子键合的复合薄膜。 或者,薄膜器件包括通过外延生长在单晶硅衬底上形成的金属硫化物层; 以及至少两个具有离子键合的复合薄膜,其通过外延生长形成在金属硫化物层上。 例如,通过将MnS层(约50nm厚)和AlN层(约1000nm厚)连续堆叠而形成的(11
20)表面GaN层(约100nm厚) 从而制造薄膜装置。
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