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公开(公告)号:US5087429A
公开(公告)日:1992-02-11
申请号:US343833
申请日:1989-04-26
申请人: Hiroshi Kamio , Kenji Araki , Yoshinobu Shima , Makoto Suzuki , Akira Kazama , Shigetake Horie , Yasumitsu Nakahama
发明人: Hiroshi Kamio , Kenji Araki , Yoshinobu Shima , Makoto Suzuki , Akira Kazama , Shigetake Horie , Yasumitsu Nakahama
CPC分类号: C30B29/06 , C30B15/02 , C30B15/12 , C30B15/14 , Y10S117/912 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068
摘要: The present invention relates to a method and apparatus for manufacturing silicon single crystals by the Czochralski method, including the steps of dividing a crucible containing molten silicon into an inner single crystal growing section and an outer material feeding section to allow said molten silicon to move slowly, and pulling a silicon single crystal from said single crystal growing section while continuously feeding silicon starting material to said material feeding section, the improvement wherein temperatures of said material feeding section and said molten silicon are maintained higher than a melting point of silicon by at least more than 12.degree. C.
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公开(公告)号:US5126114A
公开(公告)日:1992-06-30
申请号:US460563
申请日:1990-01-03
申请人: Hiroshi Kamio , Kenji Araki , Yoshinobu Shima , Makoto Suzuki , Akira Kazama , Shigetake Horie , Yasumitsu Nakahama
发明人: Hiroshi Kamio , Kenji Araki , Yoshinobu Shima , Makoto Suzuki , Akira Kazama , Shigetake Horie , Yasumitsu Nakahama
IPC分类号: H01L21/18 , C30B15/02 , C30B15/12 , C30B15/14 , H01L21/208
CPC分类号: C30B15/02 , C30B15/14 , Y10S117/90 , Y10T117/1052
摘要: According to the present invention, the inside of a crucible in which a molten raw material is placed is partitioned off with a partition ring so that a pulled single crystal is surrounded and the molten raw material may be moved and granular silicon is supplied to the outside of the partition ring, thereby to form the whole surface of outside molten liquid as a granular silicon soluble region so as to maintain the molten liquid surface on the inside of the partition ring at almost a constant level, and also to set the temperature of the molten liquid on the outside of the partition ring higher than the temperature of the inside thereof at least by 10.degree. C. or higher by covering the partition ring and the molten liquid surface on the outside thereof with a heat keeping board.
摘要翻译: 根据本发明,其中放置熔融原料的坩埚的内部用分隔环分隔开,使得拉出的单晶被包围,并且可以移动熔融的原料,并将颗粒状硅供应到外部 从而形成作为粒状硅溶解区域的外部熔融液体的整个表面,以将分隔环内部的熔融液面维持在几乎恒定的水平,并且还将 通过用隔热板覆盖分隔环和其外部的熔融液体表面,将分隔环外侧的熔融液体的内部的温度高于10℃以上。
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公开(公告)号:US5312600A
公开(公告)日:1994-05-17
申请号:US50732
申请日:1993-04-20
申请人: Hiroshi Kamio , Kenji Araki , Yoshinobu Shima , Makoto Suzuki , Takeshi Kaneto , Yasumitsu Nakahama , Takeshi Suzuki , Akio Fujibayashi
发明人: Hiroshi Kamio , Kenji Araki , Yoshinobu Shima , Makoto Suzuki , Takeshi Kaneto , Yasumitsu Nakahama , Takeshi Suzuki , Akio Fujibayashi
CPC分类号: C30B15/14 , Y10S117/90 , Y10T117/1052 , Y10T117/1068
摘要: An apparatus for making a silicon single crystal large in diameter dependently on the Czochralski process, wherein appropriate openings (11) are provided on the warmth keeping over (10) so as to prevent an undesirable influence caused by atmospheric gas. The major elements of the apparatus are that the sum of areas of the openings (11) is larger than the area of gap (18) formed between the lower end of the warmth keeping cover (10) and the level of silicon solution, and that the warmth keeping cover and the heat insulating member (12) are composed of sheet metal.
摘要翻译: 用于制造直径大的硅单晶的装置取决于切克劳斯基法,其中在保持(10)的温度上提供适当的开口(11),以防止由气氛气体引起的不期望的影响。 设备的主要元件是开口(11)的面积之和大于在保温盖(10)的下端和硅溶液层之间形成的间隙(18)的面积,而且 保温盖和绝热构件(12)由金属板构成。
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