Manufacturing method and equipment of single silicon crystal
    2.
    发明授权
    Manufacturing method and equipment of single silicon crystal 失效
    单晶硅制造方法和设备

    公开(公告)号:US5126114A

    公开(公告)日:1992-06-30

    申请号:US460563

    申请日:1990-01-03

    摘要: According to the present invention, the inside of a crucible in which a molten raw material is placed is partitioned off with a partition ring so that a pulled single crystal is surrounded and the molten raw material may be moved and granular silicon is supplied to the outside of the partition ring, thereby to form the whole surface of outside molten liquid as a granular silicon soluble region so as to maintain the molten liquid surface on the inside of the partition ring at almost a constant level, and also to set the temperature of the molten liquid on the outside of the partition ring higher than the temperature of the inside thereof at least by 10.degree. C. or higher by covering the partition ring and the molten liquid surface on the outside thereof with a heat keeping board.

    摘要翻译: 根据本发明,其中放置熔融原料的坩埚的内部用分隔环分隔开,使得拉出的单晶被包围,并且可以移动熔融的原料,并将颗粒状硅供应到外部 从而形成作为粒状硅溶解区域的外部熔融液体的整个表面,以将分隔环内部的熔融液面维持在几乎恒定的水平,并且还将 通过用隔热板覆盖分隔环和其外部的熔融液体表面,将分隔环外侧的熔融液体的内部的温度高于10℃以上。