公开(公告)号：US07875474B2

公开(公告)日：2011-01-25

申请号：US12065564

申请日：2006-09-05

申请人： Noritaka Muraki ,  Hironao Shinohara ,  Hiroshi Osawa

发明人： Noritaka Muraki ,  Hironao Shinohara ,  Hiroshi Osawa

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L33/0062 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2933/0091 ,  H01L2924/00014

摘要： The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer 13, a light emitting layer 14, and a p-type semiconductor layer 15, sequentially stacked on a substrate 11; a light-permeable positive electrode 16 stacked on the p-type semiconductor layer 15; a positive electrode bonding pad 17 provided on the light-permeable positive electrode 16; and a negative electrode bonding pad provided 18 on the n-type semiconductor layer 13, wherein a disordered uneven surface formed at least on a part of the surface 15a of the p-type semiconductor layer 15.

摘要翻译： 本发明提供了一种具有优异的光提取效率的氮化镓基化合物半导体发光器件及其制造方法。 从氮化镓系化合物半导体获得的发光元件包括：基板; 依次层叠在基板11上的n型半导体层13，发光层14和p型半导体层15， 层叠在p型半导体层15上的透光性正极16; 设置在透光正极16上的正极焊盘17; 以及在n型半导体层13上设置的负极接合焊盘18，其中至少形成在p型半导体层15的表面15a的一部分上的无序的不平坦表面。

公开(公告)号：US20100230714A1

公开(公告)日：2010-09-16

申请号：US12293639

申请日：2007-03-23

申请人： Hironao Shinohara ,  Noritaka Muraki ,  Hiroshi Osawa

发明人： Hironao Shinohara ,  Noritaka Muraki ,  Hiroshi Osawa

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A method for producing a gallium nitride based compound semiconductor light emitting device that is excellent in terms of light emission efficiency and is also capable of operating at a low driving voltage, a gallium nitride based compound semiconductor light emitting device, and a lamp using the device are provided, and the method for producing a gallium nitride based compound semiconductor light emitting device includes a first crystal growth step in which an n-type semiconductor layer 13, a light emitting layer 14, and a first p-type semiconductor layer 15 which are formed of a gallium nitride based compound semiconductor are laminated in this order on a substrate 11; and a second crystal growth step in which a second p-type semiconductor layer 16 formed of a gallium nitride based compound semiconductor is further laminated thereon; and also has an uneven pattern forming step in which an uneven pattern is formed on the surface of the first p-type semiconductor layer 15 before the first crystal growth step and after the second crystal growth step; and a heat treatment step in which a heat treatment is carried out after the uneven pattern forming step.

摘要翻译： 一种氮化镓系化合物半导体发光元件的制造方法，其在发光效率方面优异且能够以低驱动电压工作，氮化镓系化合物半导体发光元件和使用该装置的灯 并且用于制造氮化镓基化合物半导体发光器件的方法包括：第一晶体生长步骤，其中n型半导体层13，发光层14和第一p型半导体层15是 由氮化镓系化合物半导体构成的层叠体依次层叠在基板11上; 以及第二晶体生长步骤，其中由氮化镓基化合物半导体形成的第二p型半导体层16进一步层压在其上; 并且还具有在第一晶体生长步骤之前和第二晶体生长步骤之后在第一p型半导体层15的表面上形成凹凸图案的不均匀图案形成步骤; 以及在不均匀图案形成工序之后进行热处理的热处理工序。

公开(公告)号：US20090267103A1

公开(公告)日：2009-10-29

申请号：US12065564

申请日：2006-09-05

申请人： Noritaka Muraki ,  Hironao Shinohara ,  Hiroshi Osawa

发明人： Noritaka Muraki ,  Hironao Shinohara ,  Hiroshi Osawa

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0062 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2933/0091 ,  H01L2924/00014

摘要： The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer 13, a light emitting layer 14, and a p-type semiconductor layer 15, sequentially stacked on a substrate 11; a light-permeable positive electrode 16 stacked on the p-type semiconductor layer 15; a positive electrode bonding pad 17 provided on the light-permeable positive electrode 16; and a negative electrode bonding pad provided 18 on the n-type semiconductor layer 13, wherein a disordered uneven surface formed at least on a part of the surface 15a of the p-type semiconductor layer 15.

摘要翻译： 本发明提供了一种具有优异的光提取效率的氮化镓基化合物半导体发光器件及其制造方法。 从氮化镓系化合物半导体获得的发光元件包括：基板; 依次层叠在基板11上的n型半导体层13，发光层14和p型半导体层15， 层叠在p型半导体层15上的透光性正极16; 设置在透光正极16上的正极焊盘17; 以及在n型半导体层13上设置的负极接合焊盘18，其中至少形成在p型半导体层15的表面15a的一部分上的无序的不平坦表面。

公开(公告)号：US20090045434A1

公开(公告)日：2009-02-19

申请号：US12097139

申请日：2006-12-13

申请人： Noritaka Muraki ,  Hironao Shinohara

发明人： Noritaka Muraki ,  Hironao Shinohara

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/38

摘要： A gallium nitride-based compound semiconductor light-emitting device including a positive electrode having openings, which is excellent in light extraction efficiency. The gallium nitride-based compound semiconductor light-emitting device includes a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n-type semiconductor layer, where the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surface derived from spherical particulates.

摘要翻译： 一种氮化镓系化合物半导体发光元件，具有具有开口的正极，光提取效率优异。 氮化镓系化合物半导体发光元件包括：基板; n型半导体层，发光层和p型半导体层，所述层由氮化镓系化合物半导体形成，并依次层叠在基板上; 设置为与p型半导体层接触的正极; 以及负极，其设置成与n型半导体层接触，其中正极是具有开口的正极，并且与开口相对应的p型半导体层的表面的至少一部分被粗糙化 表面衍生自球形微粒。

公开(公告)号：US20090152585A1

公开(公告)日：2009-06-18

申请号：US12065970

申请日：2006-09-05

申请人： Hironao Shinohara ,  Hisayuki Miki ,  Noritaka Muraki

发明人： Hironao Shinohara ,  Hisayuki Miki ,  Noritaka Muraki

IPC分类号： H01L33/00

CPC分类号： H01L33/025 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/42

摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.

摘要翻译： 本发明的目的是提供一种氮化镓系化合物半导体发光元件，该氮化镓系化合物半导体发光元件的光输出效率优异，仅需要低驱动电压（Vf）。 本发明的氮化镓系化合物半导体发光元件包括n型半导体层，发光层和由氮化镓系化合物半导体形成的p型半导体层，并依次层叠在基板上， 以及分别与p型半导体层和n型半导体层接触的正极和负极，其中在p中存在p型杂质和氢原子共存的区域 与正极接触的至少一部分与正极的p型半导体层接触的至少一部分由n型导电透光材料形成。

公开(公告)号：US08258541B2

公开(公告)日：2012-09-04

申请号：US12097139

申请日：2006-12-13

申请人： Noritaka Muraki ,  Hironao Shinohara

发明人： Noritaka Muraki ,  Hironao Shinohara

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/38

摘要： A gallium nitride-based compound semiconductor light-emitting device including a positive electrode having openings, which is excellent in light extraction efficiency. The gallium nitride-based compound semiconductor light-emitting device includes a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n-type semiconductor layer, where the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surface derived from spherical particulates.

摘要翻译： 一种氮化镓系化合物半导体发光元件，具有具有开口的正极，光提取效率优异。 氮化镓系化合物半导体发光元件包括：基板; n型半导体层，发光层和p型半导体层，所述层由氮化镓系化合物半导体形成，并依次层叠在基板上; 设置为与p型半导体层接触的正极; 以及负极，其设置成与n型半导体层接触，其中正极是具有开口的正极，并且与开口相对应的p型半导体层的表面的至少一部分被粗糙化 表面衍生自球形微粒。

公开(公告)号：US07847314B2

公开(公告)日：2010-12-07

申请号：US12065970

申请日：2006-09-05

申请人： Hironao Shinohara ,  Hisayuki Miki ,  Noritaka Muraki

发明人： Hironao Shinohara ,  Hisayuki Miki ,  Noritaka Muraki

IPC分类号： H01L21/20 ,  H01L21/00

CPC分类号： H01L33/025 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/42

摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.

摘要翻译： 本发明的目的是提供一种氮化镓系化合物半导体发光元件，该氮化镓系化合物半导体发光元件的光输出效率优异，仅需要低驱动电压（Vf）。 本发明的氮化镓系化合物半导体发光元件包括n型半导体层，发光层和由氮化镓系化合物半导体形成的p型半导体层，并依次层叠在基板上， 以及分别与p型半导体层和n型半导体层接触的正极和负极，其中在p中存在p型杂质和氢原子共存的区域 与正极接触的至少一部分与正极的p型半导体层接触的至少一部分由n型导电透光材料形成。

公开(公告)号：US08026118B2

公开(公告)日：2011-09-27

申请号：US12096827

申请日：2006-12-12

申请人： Hironao Shinohara ,  Hiroshi Osawa

发明人： Hironao Shinohara ,  Hiroshi Osawa

IPC分类号： H01L21/3065

CPC分类号： H01L33/38 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a method of manufacturing the same. The gallium nitride based compound semiconductor light-emitting device includes: a substrate 11; an n-type semiconductor layer 13, a light-emitting layer 14, and a p-type semiconductor layer 15 that are composed of gallium nitride based compound semiconductors and formed on the substrate 11 in this order; a transparent positive electrode 16 that is formed on the p-type semiconductor layer 15; a positive electrode bonding pad 17 that is formed on the transparent positive electrode 16; a negative electrode bonding pad 18 that is formed on the n-type semiconductor layer 13; and an uneven surface that has random convex portions formed thereon and is provided on at least a portion of the surface 16a of the transparent positive electrode 16.

摘要翻译： 本发明提供一种发光效率高的氮化镓系化合物半导体发光元件及其制造方法。 氮化镓系化合物半导体发光元件具备：基板11; 由氮化镓系化合物半导体构成的n型半导体层13，发光层14，p型半导体层15，依次形成在基板11上。 在p型半导体层15上形成的透明正极16; 形成在透明正极16上的正极焊盘17; 形成在n型半导体层13上的负极焊盘18; 以及形成在其上的无规凸部并且设置在透明正极16的表面16a的至少一部分上的不平坦表面。

公开(公告)号：US20110104837A1

公开(公告)日：2011-05-05

申请号：US13005070

申请日：2011-01-12

申请人： Naoki Fukunaga ,  Hironao Shinohara ,  Hiroshi Osawa

发明人： Naoki Fukunaga ,  Hironao Shinohara ,  Hiroshi Osawa

IPC分类号： H01L33/00

CPC分类号： H01L33/025 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced.

摘要翻译： 本发明提供了具有高发光效率和低驱动电压Vf的氮化镓基化合物半导体发光器件。 氮化镓基化合物半导体发光器件包括p型半导体层和包含掺杂剂并形成在p型半导体层上的透明导电氧化物膜。 在p型半导体层和透明导电氧化物膜之间的界面处的掺杂剂浓度高于透明导电氧化物膜的体掺杂剂浓度。 因此，p型半导体层和透明导电氧化物膜之间的接触电阻降低。

公开(公告)号：US08124992B2

公开(公告)日：2012-02-28

申请号：US12199723

申请日：2008-08-27

申请人： Hiroshi Osawa ,  Naoki Fukunaga ,  Hironao Shinohara

发明人： Hiroshi Osawa ,  Naoki Fukunaga ,  Hironao Shinohara

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0091

摘要： The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp.

摘要翻译： 本发明提供一种发光器件，其包括依次层叠的n型半导体层，发光层，p型半导体层和氧化钛系导电膜层，其中，所述氧化钛系导电性 膜层包括作为光提取层的第一层和作为电流扩散层的第二层，第二层布置在第一层的p型半导体层侧，制造发光器件的方法和 一盏灯。