摘要:
The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.
摘要:
The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.
摘要:
A substrate processing system 1 comprises: a processing tank 3 for processing substrates W with a processing liquid; a drying unit 6 disposed above the processing tank 3; and a carrying mechanism 8 for carrying the substrates W between the processing tank 3 and the drying unit 6. A processing gas supply line 21 for supplying a processing gas into the drying unit 6 and inert gas supply lines 24 and 25 for supplying an inert gas into the drying unit 6 are connected to the drying unit 6. A first discharge line for discharging an atmosphere purged from the drying unit 6 and a second discharge line 27 for forcibly exhausting the drying unit 6 are connected to the drying unit 6.
摘要:
A substrate processing system 1 comprises: a processing tank 3 for processing substrates W with a processing liquid; a drying unit 6 disposed above the processing tank 3; and a carrying mechanism 8 for carrying the substrates W between the processing tank 3 and the drying unit 6. A processing gas supply line 21 for supplying a processing gas into the drying unit 6 and inert gas supply lines 24 and 25 for supplying an inert gas into the drying unit 6 are connected to the drying unit 6. A first discharge line for discharging an atmosphere purged from the drying unit 6 and a second discharge line 27 for forcibly exhausting the drying unit 6 are connected to the drying unit 6.
摘要:
A substrate processing system 1 comprises: a processing tank 3 for processing substrates W with a processing liquid; a drying unit 6 disposed above the processing tank 3; and a carrying mechanism 8 for carrying the substrates W between the processing tank 3 and the drying unit 6. A processing gas supply line 21 for supplying a processing gas into the drying unit 6 and inert gas supply lines 24 and 25 for supplying an inert gas into the drying unit 6 are connected to the drying unit 6. A first discharge line for discharging an atmosphere purged from the drying unit 6 and a second discharge line 27 for forcibly exhausting the drying unit 6 are connected to the drying unit 6.
摘要:
A plurality of process liquid supply nozzles 10 are arranged at different levels on right and left sides of a semiconductor wafer W in a process bath 1. A discharge port of each of the nozzles 10 is directed toward the semiconductor wafer W. In accordance with a predetermined procedure, a process liquid is discharged from one or more nozzles 10 selected from the plurality of nozzles 10. In order to perform a chemical liquid treatment, a chemical liquid is discharged from the lowermost nozzle 10, for example, and thereafter, the nozzles 10 on the upper levels sequentially discharge the chemical liquid. In order to perform a rinse liquid treatment by replacing the chemical liquid in the process bath 1 with a rinse liquid, the rinse liquid is discharged from the lowermost nozzle 10 at first, for example. Thereafter, the rinse liquid is discharged from all the nozzles 10. In this manner, efficiency and uniformity in the liquid treatment can be improved.
摘要:
A plurality of process liquid supply nozzles 10 are arranged at different levels on right and left sides of a semiconductor wafer W in a process bath 1. A discharge port of each of the nozzles 10 is directed toward the semiconductor wafer W. In accordance with a predetermined procedure, a process liquid is discharged from one or more nozzles 10 selected from the plurality of nozzles 10. In order to perform a chemical liquid treatment, a chemical liquid is discharged from the lowermost nozzle 10, for example, and thereafter, the nozzles 10 on the upper levels sequentially discharge the chemical liquid. In order to perform a rinse liquid treatment by replacing the chemical liquid in the process bath 1 with a rinse liquid, the rinse liquid is discharged from the lowermost nozzle 10 at first, for example. Thereafter, the rinse liquid is discharged from all the nozzles 10. In this manner, efficiency and uniformity in the liquid treatment can be improved.
摘要:
A washing/drying process apparatus comprises a spin chuck for holding a substrate such that a surface thereof to be processed faces upward and for rotating the substrate, a process fluid supply mechanism for selectively supplying one or two or more of a plurality of kinds of process fluids to the surface to be processed of the substrate rotated by the spin chuck, the process fluid supply mechanism having a first nozzle with a discharge port for discharging a process fluid which is in a liquid phase under conditions of room temperature and atmospheric pressure, and a second nozzle with a discharge port for discharging fluid which is in a gas phase under conditions of room temperature and atmospheric pressure, a driving mechanism for simultaneously moving the first and second nozzles to a location above the substrate held by the spin chuck, and a controller for controlling operations of the process liquid supply mechanism and the driving mechanism.