公开(公告)号：US20070113423A1

公开(公告)日：2007-05-24

申请号：US11594232

申请日：2006-11-08

申请人： Hiroshi Tanaka ,  Hidetoshi Nakao ,  Naoki Shindo ,  Atushi Yamashita ,  Tsukasa Hirayama ,  Kotaro Tsurusaki

发明人： Hiroshi Tanaka ,  Hidetoshi Nakao ,  Naoki Shindo ,  Atushi Yamashita ,  Tsukasa Hirayama ,  Kotaro Tsurusaki

IPC分类号： F26B3/00

CPC分类号： H01L21/67028 ,  H01L21/67034 ,  Y10S118/90 ,  Y10S134/902

摘要： The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.

摘要翻译： 本发明提供一种干燥装置，其能够通过使用干燥蒸汽令工件干燥良好。干燥装置具有控制装置，用于控制载气的供给和干燥蒸气的供给到保持工件的处理罐中。 干燥工序进行供给载气的载气供给工序以及混合流体供给工序，供给通过交替地混合载气和干燥蒸气而制备的混合流体。 执行混合流体供给步骤的总混合流体供给时间不低于执行载气供给步骤和混合流体供给步骤的总处理时间的57％。

公开(公告)号：US20110218113A1

公开(公告)日：2011-09-08

申请号：US13112463

申请日：2011-05-20

申请人： Seiki Miyata ,  Hiroyuki Fukushima ,  Reiji Kuriki ,  Akira Ibi ,  Masateru Yoshizumi ,  Akio Kinoshita ,  Yutaka Yamada ,  Yuh Shiohara ,  Ryuji Yoshida ,  Takeharu Kato ,  Tsukasa Hirayama

发明人： Seiki Miyata ,  Hiroyuki Fukushima ,  Reiji Kuriki ,  Akira Ibi ,  Masateru Yoshizumi ,  Akio Kinoshita ,  Yutaka Yamada ,  Yuh Shiohara ,  Ryuji Yoshida ,  Takeharu Kato ,  Tsukasa Hirayama

IPC分类号： H01B12/00 ,  B05D5/00 ,  B05D3/10 ,  B05D3/02 ,  H01L39/24 ,  B32B15/04 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L39/2461 ,  Y10T428/24355

摘要： Provided is a substrate for superconductive film formation, which includes a metal substrate, and an oxide layer formed directly on the metal substrate, containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm. A method of manufacturing a substrate for superconductive film formation, which includes forming an oxide layer directly on a metal substrate, the oxide layer containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm.

摘要翻译： 提供了一种用于超导膜形成的基板，其包括金属基板和直接形成在金属基板上的氧化物层，其包含氧化铬作为主要成分并且具有10-300nm的厚度和不具有算术平均粗糙度Ra 超过50nm。 一种超导膜形成用基板的制造方法，其特征在于，包括在金属基板上直接形成氧化物层，所述氧化物层含有氧化铬为主要成分，厚度为10-300nm，算术平均粗糙度Ra不为 超过50nm。

公开(公告)号：US07581335B2

公开(公告)日：2009-09-01

申请号：US11594232

申请日：2006-11-08

申请人： Hiroshi Tanaka ,  Hidetoshi Nakao ,  Naoki Shindo ,  Atushi Yamashita ,  Tsukasa Hirayama ,  Kotaro Tsurusaki

发明人： Hiroshi Tanaka ,  Hidetoshi Nakao ,  Naoki Shindo ,  Atushi Yamashita ,  Tsukasa Hirayama ,  Kotaro Tsurusaki

IPC分类号： F26B7/00

CPC分类号： H01L21/67028 ,  H01L21/67034 ,  Y10S118/90 ,  Y10S134/902

摘要： The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.

摘要翻译： 本发明提供一种干燥装置，其能够通过使用干燥蒸汽令工件干燥良好。干燥装置具有控制装置，用于控制载气的供给和干燥蒸气的供给到保持工件的处理罐中。 干燥工序进行供给载气的载气供给工序以及混合流体供给工序，供给通过交替地混合载气和干燥蒸气而制备的混合流体。 执行混合流体供给步骤的总混合流体供给时间不低于执行载气供给步骤和混合流体供给步骤的总处理时间的57％。

公开(公告)号：US20060009362A1

公开(公告)日：2006-01-12

申请号：US10526896

申请日：2003-10-29

申请人： Katsuya Hasegawa ,  Teruo Izumi ,  Yuh Shiohara ,  Yoshihiro Sugawara ,  Tsukasa Hirayama ,  Fumiyasu Oba ,  Yuichi Ikuhara

发明人： Katsuya Hasegawa ,  Teruo Izumi ,  Yuh Shiohara ,  Yoshihiro Sugawara ,  Tsukasa Hirayama ,  Fumiyasu Oba ,  Yuichi Ikuhara

IPC分类号： H01L39/24

CPC分类号： H01L39/2458 ,  C30B23/02 ,  C30B25/18 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2461

摘要： The invention relates to a technique for forming a single crystalline thin film of good quality on an underlayer. Such a technique is suitably applicable to provision of an oxide high-temperature superconductor thin film usable for a superconducting wire material, a superconducting device or the like. The single crystalline thin film formed on a substratum is made of a substance different from that of the substratum. A specific atomic layer contained in common in the substratum and the thin film is shared at an interface between the substratum and the thin film. In a region as adjacent to the interface as 100 or fewer unit cells of the thin film apart from the interface, a ratio of crystalline region having grown with an orientation of ±2 degrees or less deviation angle on the basis of a crystal orientation of the substratum is 50% or more.

摘要翻译： 本发明涉及一种在底层上形成质量好的单晶薄膜的技术。 这种技术适用于提供可用于超导线材，超导装置等的氧化物高温超导体薄膜。 在基底上形成的单晶薄膜由与底层不同的物质制成。 在基底和薄膜中共同包含的特定原子层在基底和薄膜之间的界面处共享。 在与接口相邻的区域中，与界面相比，薄膜的单元电池为100个或更少，根据晶体取向为±2度以下的取向生长的结晶区域的比例 基质为50％以上。

公开(公告)号：US08927461B2

公开(公告)日：2015-01-06

申请号：US13112463

申请日：2011-05-20

申请人： Seiki Miyata ,  Hiroyuki Fukushima ,  Reiji Kuriki ,  Akira Ibi ,  Masateru Yoshizumi ,  Akio Kinoshita ,  Yutaka Yamada ,  Yuh Shiohara ,  Ryuji Yoshida ,  Takeharu Kato ,  Tsukasa Hirayama

发明人： Seiki Miyata ,  Hiroyuki Fukushima ,  Reiji Kuriki ,  Akira Ibi ,  Masateru Yoshizumi ,  Akio Kinoshita ,  Yutaka Yamada ,  Yuh Shiohara ,  Ryuji Yoshida ,  Takeharu Kato ,  Tsukasa Hirayama

IPC分类号： H01L39/24 ,  H01B12/06 ,  H01B13/00

CPC分类号： H01L39/2461 ,  Y10T428/24355

摘要： Provided is a substrate for superconductive film formation, which includes a metal substrate, and an oxide layer formed directly on the metal substrate, containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm. A method of manufacturing a substrate for superconductive film formation, which includes forming an oxide layer directly on a metal substrate, the oxide layer containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm.

摘要翻译： 提供了一种用于超导膜形成的基板，其包括金属基板和直接形成在金属基板上的氧化物层，其包含氧化铬作为主要成分并且具有10-300nm的厚度和不具有算术平均粗糙度Ra 超过50nm。 一种超导膜形成用基板的制造方法，其特征在于，包括在金属基板上直接形成氧化物层，所述氧化物层含有氧化铬为主要成分，厚度为10-300nm，算术平均粗糙度Ra不为 超过50nm。

公开(公告)号：US20060166831A1

公开(公告)日：2006-07-27

申请号：US10526745

申请日：2003-10-29

申请人： Katsuya Hasegawa ,  Teruo Izumi ,  Yuh Shiohara ,  Yoshihiro Sugawara ,  Tsukasa Hirayama ,  Fumiyasu Oba ,  Yuichi Ikuhara

发明人： Katsuya Hasegawa ,  Teruo Izumi ,  Yuh Shiohara ,  Yoshihiro Sugawara ,  Tsukasa Hirayama ,  Fumiyasu Oba ,  Yuichi Ikuhara

IPC分类号： H01L39/24

CPC分类号： H01L39/2461 ,  C30B23/02 ,  C30B25/18 ,  C30B29/22 ,  C30B29/225

摘要： The invention relates to a technique for forming a thin film of good quality on a base substance via an intermediate layer. Such a film formation technique is suitably applicable to formation of an oxide high-temperature superconductor thin film usable for a superconducting wire material, a superconducting device or the like. In the method of forming a thin film on a base substance via an intermediate layer, an interface energy Ea at an interface A between the base substance and the intermediate layer, an interface energy Eb at an interface B between the intermediate layer and the thin film, and an interface energy Ec at an interface C between the base substance and the thin film in a state where the intermediate layer is omitted are calculated, and then a substance for the intermediate layer is selected so as to satisfy conditions of Ea

摘要翻译： 本发明涉及通过中间层在基体上形成质量好的薄膜的技术。 这种成膜技术适用于形成可用于超导线材，超导装置等的氧化物高温超导体薄膜。 在通过中间层在基材上形成薄膜的方法中，在基材和中间层之间的界面A处的界面能量Ea，中间层和薄膜之间的界面B处的界面能量Eb ，并且计算在省略中间层的状态下在基体和薄膜之间的界面C处的界面能量Ec，然后选择中间层物质以满足Ea

公开(公告)号：US4662911A

公开(公告)日：1987-05-05

申请号：US725510

申请日：1985-04-22

申请人： Tsukasa Hirayama ,  Yukihisa Takeuchi ,  Yasunao Miura

发明人： Tsukasa Hirayama ,  Yukihisa Takeuchi ,  Yasunao Miura

IPC分类号： B01D39/20 ,  C04B38/00 ,  F01N3/022 ,  F01N3/027 ,  F01N3/02

CPC分类号： F01N3/027 ,  B01D39/2075 ,  B01D39/2093 ,  C04B38/0006 ,  F01N3/0222 ,  F01N2330/06 ,  F01N2350/02 ,  F01N2390/02 ,  Y10S55/10 ,  Y10S55/30 ,  Y10T428/24149

摘要： The invention relates to a trap for automotive exhaust particulates, with a high trapping efficiency and a low pressure loss for exhaust gas passage. The trap is a honeycomb-type filter with a three-dimensional network skelton. Further, provision of a ceramic incinerator comprising a heater in front of the honeycomb filter makes it easy to incinerate trapped particulates for removal.

摘要翻译： 本发明涉及一种用于汽车排气微粒的捕集器，具有高的捕集效率和低的排气通道压力损失。 陷阱是具有三维网络skelton的蜂窝型滤波器。 此外，在蜂窝过滤器的前面设置包括加热器的陶瓷焚化炉，容易焚烧被捕集的微粒以便除去。