公开(公告)号：US20110011425A1

公开(公告)日：2011-01-20

申请号：US12885279

申请日：2010-09-17

申请人： Takayuki TOSHIMA ,  Naoki Shindo ,  Hiroshi Yano ,  Kotaro Tsurusaki

发明人： Takayuki TOSHIMA ,  Naoki Shindo ,  Hiroshi Yano ,  Kotaro Tsurusaki

IPC分类号： B08B3/00

CPC分类号： H01L21/67034 ,  H01L21/67028 ,  H01L21/67757 ,  Y10S134/902

摘要： A substrate processing system 1 comprises: a processing tank 3 for processing substrates W with a processing liquid; a drying unit 6 disposed above the processing tank 3; and a carrying mechanism 8 for carrying the substrates W between the processing tank 3 and the drying unit 6. A processing gas supply line 21 for supplying a processing gas into the drying unit 6 and inert gas supply lines 24 and 25 for supplying an inert gas into the drying unit 6 are connected to the drying unit 6. A first discharge line for discharging an atmosphere purged from the drying unit 6 and a second discharge line 27 for forcibly exhausting the drying unit 6 are connected to the drying unit 6.

摘要翻译： 基板处理系统1包括：用处理液处理基板W的处理槽3; 设置在处理罐3上方的干燥单元6; 以及用于在处理罐3和干燥单元6之间承载基板W的承载机构8.用于向干燥单元6供应处理气体的处理气体供应管线21和用于供应惰性气体的惰性气体供应管线24和25 干燥单元6连接到干燥单元6.用于排出从干燥单元6吹扫的气氛的第一排出管线和用于强制排出干燥单元6的第二排出管线27连接到干燥单元6。

公开(公告)号：US07836900B2

公开(公告)日：2010-11-23

申请号：US10591971

申请日：2005-03-25

申请人： Takayuki Toshima ,  Naoki Shindo ,  Hiroshi Yano ,  Kotaro Tsurusaki

发明人： Takayuki Toshima ,  Naoki Shindo ,  Hiroshi Yano ,  Kotaro Tsurusaki

IPC分类号： B08B5/00

CPC分类号： H01L21/67034 ,  H01L21/67028 ,  H01L21/67757 ,  Y10S134/902

摘要： A substrate processing system 1 comprises: a processing tank 3 for processing substrates W with a processing liquid; a drying unit 6 disposed above the processing tank 3; and a carrying mechanism 8 for carrying the substrates W between the processing tank 3 and the drying unit 6. A processing gas supply line 21 for supplying a processing gas into the drying unit 6 and inert gas supply lines 24 and 25 for supplying an inert gas into the drying unit 6 are connected to the drying unit 6. A first discharge line for discharging an atmosphere purged from the drying unit 6 and a second discharge line 27 for forcibly exhausting the drying unit 6 are connected to the drying unit 6.

摘要翻译： 基板处理系统1包括：用处理液处理基板W的处理槽3; 设置在处理罐3上方的干燥单元6; 以及用于在处理罐3和干燥单元6之间承载基板W的承载机构8.用于向干燥单元6供应处理气体的处理气体供应管线21和用于供应惰性气体的惰性气体供应管线24和25 干燥单元6连接到干燥单元6.用于排出从干燥单元6吹扫的气氛的第一排出管线和用于强制排出干燥单元6的第二排出管线27连接到干燥单元6。

公开(公告)号：US20070175062A1

公开(公告)日：2007-08-02

申请号：US10591971

申请日：2005-03-25

申请人： Takayuki Toshima ,  Naoki Shindo ,  Hiroshi Yano ,  Kotaro Tsurusaki

发明人： Takayuki Toshima ,  Naoki Shindo ,  Hiroshi Yano ,  Kotaro Tsurusaki

IPC分类号： F26B21/06 ,  F26B5/04

CPC分类号： H01L21/67034 ,  H01L21/67028 ,  H01L21/67757 ,  Y10S134/902

摘要： A substrate processing system 1 comprises: a processing tank 3 for processing substrates W with a processing liquid; a drying unit 6 disposed above the processing tank 3; and a carrying mechanism 8 for carrying the substrates W between the processing tank 3 and the drying unit 6. A processing gas supply line 21 for supplying a processing gas into the drying unit 6 and inert gas supply lines 24 and 25 for supplying an inert gas into the drying unit 6 are connected to the drying unit 6. A first discharge line for discharging an atmosphere purged from the drying unit 6 and a second discharge line 27 for forcibly exhausting the drying unit 6 are connected to the drying unit 6.

摘要翻译： 基板处理系统1包括：用处理液处理基板W的处理槽3; 设置在处理罐3上方的干燥单元6; 以及用于在处理槽3和干燥单元6之间承载基板W的承载机构8。 将用于将干燥单元6中的处理气体供给到处理气体供给管线21和用于向干燥单元6供给惰性气体的惰性气体供给管线24和25连接到干燥单元6。 用于排出从干燥单元6吹扫的气氛的第一排出管线和用于强制排出干燥单元6的第二排出管线27连接到干燥单元6。

公开(公告)号：US20060060232A1

公开(公告)日：2006-03-23

申请号：US10540762

申请日：2005-03-30

申请人： Kotaro Tsurusaki ,  Hiroshi Tanaka ,  Takayuki Toshima ,  Kazuyoshi Eshima

发明人： Kotaro Tsurusaki ,  Hiroshi Tanaka ,  Takayuki Toshima ,  Kazuyoshi Eshima

IPC分类号： B08B3/00

CPC分类号： H01L21/67086 ,  H01L21/6708

摘要： A plurality of process liquid supply nozzles 10 are arranged at different levels on right and left sides of a semiconductor wafer W in a process bath 1. A discharge port of each of the nozzles 10 is directed toward the semiconductor wafer W. In accordance with a predetermined procedure, a process liquid is discharged from one or more nozzles 10 selected from the plurality of nozzles 10. In order to perform a chemical liquid treatment, a chemical liquid is discharged from the lowermost nozzle 10, for example, and thereafter, the nozzles 10 on the upper levels sequentially discharge the chemical liquid. In order to perform a rinse liquid treatment by replacing the chemical liquid in the process bath 1 with a rinse liquid, the rinse liquid is discharged from the lowermost nozzle 10 at first, for example. Thereafter, the rinse liquid is discharged from all the nozzles 10. In this manner, efficiency and uniformity in the liquid treatment can be improved.

摘要翻译： 多个处理液供给喷嘴10在处理槽1中的半导体晶片W的左右两侧以不同的水平配置。各喷嘴10的排出口朝向半导体晶片W.按照 从多个喷嘴10中选择的一个以上的喷嘴10排出处理液。为了进行药液处理，例如从最下面的喷嘴10喷出化学液，之后，喷嘴 10上方依次排出化学液体。 为了通过用冲洗液更换处理槽1中的化学液体进行冲洗液处理，首先例如从最下面的喷嘴10排出冲洗液。 此后，冲洗液体从所有喷嘴10排出。这样可以提高液体处理的效率和均匀性。

公开(公告)号：US08652344B2

公开(公告)日：2014-02-18

申请号：US12403286

申请日：2009-03-12

申请人： Kotaro Tsurusaki ,  Hiroshi Tanaka ,  Takayuki Toshima ,  Kazuyoshi Eshima

发明人： Kotaro Tsurusaki ,  Hiroshi Tanaka ,  Takayuki Toshima ,  Kazuyoshi Eshima

IPC分类号： B44C1/22

CPC分类号： H01L21/67086 ,  H01L21/6708

摘要： A plurality of process liquid supply nozzles 10 are arranged at different levels on right and left sides of a semiconductor wafer W in a process bath 1. A discharge port of each of the nozzles 10 is directed toward the semiconductor wafer W. In accordance with a predetermined procedure, a process liquid is discharged from one or more nozzles 10 selected from the plurality of nozzles 10. In order to perform a chemical liquid treatment, a chemical liquid is discharged from the lowermost nozzle 10, for example, and thereafter, the nozzles 10 on the upper levels sequentially discharge the chemical liquid. In order to perform a rinse liquid treatment by replacing the chemical liquid in the process bath 1 with a rinse liquid, the rinse liquid is discharged from the lowermost nozzle 10 at first, for example. Thereafter, the rinse liquid is discharged from all the nozzles 10. In this manner, efficiency and uniformity in the liquid treatment can be improved.

摘要翻译： 多个处理液供给喷嘴10在处理槽1中的半导体晶片W的左右两侧以不同的水平配置。各喷嘴10的排出口朝向半导体晶片W.按照 从多个喷嘴10中选择的一个以上的喷嘴10排出处理液。为了进行药液处理，例如从最下面的喷嘴10喷出化学液，之后，喷嘴 10上方依次排出化学液体。 为了通过用冲洗液更换处理槽1中的化学液体进行冲洗液处理，首先例如从最下面的喷嘴10排出冲洗液。 此后，冲洗液体从所有喷嘴10排出。这样可以提高液体处理的效率和均匀性。

公开(公告)号：US20070113423A1

公开(公告)日：2007-05-24

申请号：US11594232

申请日：2006-11-08

申请人： Hiroshi Tanaka ,  Hidetoshi Nakao ,  Naoki Shindo ,  Atushi Yamashita ,  Tsukasa Hirayama ,  Kotaro Tsurusaki

发明人： Hiroshi Tanaka ,  Hidetoshi Nakao ,  Naoki Shindo ,  Atushi Yamashita ,  Tsukasa Hirayama ,  Kotaro Tsurusaki

IPC分类号： F26B3/00

CPC分类号： H01L21/67028 ,  H01L21/67034 ,  Y10S118/90 ,  Y10S134/902

摘要： The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.

摘要翻译： 本发明提供一种干燥装置，其能够通过使用干燥蒸汽令工件干燥良好。干燥装置具有控制装置，用于控制载气的供给和干燥蒸气的供给到保持工件的处理罐中。 干燥工序进行供给载气的载气供给工序以及混合流体供给工序，供给通过交替地混合载气和干燥蒸气而制备的混合流体。 执行混合流体供给步骤的总混合流体供给时间不低于执行载气供给步骤和混合流体供给步骤的总处理时间的57％。

公开(公告)号：US07581335B2

公开(公告)日：2009-09-01

申请号：US11594232

申请日：2006-11-08

申请人： Hiroshi Tanaka ,  Hidetoshi Nakao ,  Naoki Shindo ,  Atushi Yamashita ,  Tsukasa Hirayama ,  Kotaro Tsurusaki

发明人： Hiroshi Tanaka ,  Hidetoshi Nakao ,  Naoki Shindo ,  Atushi Yamashita ,  Tsukasa Hirayama ,  Kotaro Tsurusaki

IPC分类号： F26B7/00

CPC分类号： H01L21/67028 ,  H01L21/67034 ,  Y10S118/90 ,  Y10S134/902

摘要： The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.

摘要翻译： 本发明提供一种干燥装置，其能够通过使用干燥蒸汽令工件干燥良好。干燥装置具有控制装置，用于控制载气的供给和干燥蒸气的供给到保持工件的处理罐中。 干燥工序进行供给载气的载气供给工序以及混合流体供给工序，供给通过交替地混合载气和干燥蒸气而制备的混合流体。 执行混合流体供给步骤的总混合流体供给时间不低于执行载气供给步骤和混合流体供给步骤的总处理时间的57％。

公开(公告)号：US06247479B1

公开(公告)日：2001-06-19

申请号：US09084319

申请日：1998-05-26

申请人： Hiroki Taniyama ,  Yuji Kamikawa ,  Kotaro Tsurusaki

发明人： Hiroki Taniyama ,  Yuji Kamikawa ,  Kotaro Tsurusaki

IPC分类号： B08B302

CPC分类号： H01L21/67028 ,  B08B3/024 ,  Y10S134/902

摘要： A washing/drying process apparatus comprises a spin chuck for holding a substrate such that a surface thereof to be processed faces upward and for rotating the substrate, a process fluid supply mechanism for selectively supplying one or two or more of a plurality of kinds of process fluids to the surface to be processed of the substrate rotated by the spin chuck, the process fluid supply mechanism having a first nozzle with a discharge port for discharging a process fluid which is in a liquid phase under conditions of room temperature and atmospheric pressure, and a second nozzle with a discharge port for discharging fluid which is in a gas phase under conditions of room temperature and atmospheric pressure, a driving mechanism for simultaneously moving the first and second nozzles to a location above the substrate held by the spin chuck, and a controller for controlling operations of the process liquid supply mechanism and the driving mechanism.

摘要翻译： 洗涤/干燥处理装置包括用于保持基板的旋转卡盘，使得其被处理的表面朝上并使基板旋转;工艺流体供给机构，用于选择性地供应多种工艺中的一种或两种以上 流体流到由旋转卡盘旋转的基板的待加工表面，工艺流体供给机构具有第一喷嘴，该喷嘴具有用于排出在室温和大气压条件下处于液相的处理流体的排出口，以及 具有用于排出在室温和大气压条件下处于气相的流体的排出口的第二喷嘴，用于同时将第一和第二喷嘴移动到由旋转卡盘保持的基板上方的驱动机构，以及 控制器，用于控制处理液体供应机构和驱动机构的操作。