公开(公告)号：US20110011425A1

公开(公告)日：2011-01-20

申请号：US12885279

申请日：2010-09-17

申请人： Takayuki TOSHIMA ,  Naoki Shindo ,  Hiroshi Yano ,  Kotaro Tsurusaki

发明人： Takayuki TOSHIMA ,  Naoki Shindo ,  Hiroshi Yano ,  Kotaro Tsurusaki

IPC分类号： B08B3/00

CPC分类号： H01L21/67034 ,  H01L21/67028 ,  H01L21/67757 ,  Y10S134/902

摘要： A substrate processing system 1 comprises: a processing tank 3 for processing substrates W with a processing liquid; a drying unit 6 disposed above the processing tank 3; and a carrying mechanism 8 for carrying the substrates W between the processing tank 3 and the drying unit 6. A processing gas supply line 21 for supplying a processing gas into the drying unit 6 and inert gas supply lines 24 and 25 for supplying an inert gas into the drying unit 6 are connected to the drying unit 6. A first discharge line for discharging an atmosphere purged from the drying unit 6 and a second discharge line 27 for forcibly exhausting the drying unit 6 are connected to the drying unit 6.

摘要翻译： 基板处理系统1包括：用处理液处理基板W的处理槽3; 设置在处理罐3上方的干燥单元6; 以及用于在处理罐3和干燥单元6之间承载基板W的承载机构8.用于向干燥单元6供应处理气体的处理气体供应管线21和用于供应惰性气体的惰性气体供应管线24和25 干燥单元6连接到干燥单元6.用于排出从干燥单元6吹扫的气氛的第一排出管线和用于强制排出干燥单元6的第二排出管线27连接到干燥单元6。

公开(公告)号：US20090179007A1

公开(公告)日：2009-07-16

申请号：US12403286

申请日：2009-03-12

申请人： Kotaro TSURUSAKI ,  Hiroshi TANAKA ,  Takayuki TOSHIMA ,  Kazuyoshi ESHIMA

发明人： Kotaro TSURUSAKI ,  Hiroshi TANAKA ,  Takayuki TOSHIMA ,  Kazuyoshi ESHIMA

IPC分类号： B44C1/22

CPC分类号： H01L21/67086 ,  H01L21/6708

摘要： A plurality of process liquid supply nozzles 10 are arranged at different levels on right and left sides of a semiconductor wafer W in a process bath 1. A discharge port of each of the nozzles 10 is directed toward the semiconductor wafer W. In accordance with a predetermined procedure, a process liquid is discharged from one or more nozzles 10 selected from the plurality of nozzles 10. In order to perform a chemical liquid treatment, a chemical liquid is discharged from the lowermost nozzle 10, for example, and thereafter, the nozzles 10 on the upper levels sequentially discharge the chemical liquid. In order to perform a rinse liquid treatment by replacing the chemical liquid in the process bath 1 with a rinse liquid, the rinse liquid is discharged from the lowermost nozzle 10 at first, for example. Thereafter, the rinse liquid is discharged from all the nozzles 10. In this manner, efficiency and uniformity in the liquid treatment can be improved.

摘要翻译： 多个处理液供给喷嘴10在处理槽1中的半导体晶片W的左右两侧以不同的水平配置。各喷嘴10的排出口朝向半导体晶片W.按照 从多个喷嘴10中选择的一个以上的喷嘴10排出处理液。为了进行药液处理，例如从最下面的喷嘴10喷出化学液，之后，喷嘴 10上方依次排出化学液体。 为了通过用冲洗液更换处理槽1中的化学液体进行冲洗液处理，首先例如从最下面的喷嘴10排出冲洗液。 此后，冲洗液体从所有喷嘴10排出。这样可以提高液体处理的效率和均匀性。

公开(公告)号：US20110214694A1

公开(公告)日：2011-09-08

申请号：US13039361

申请日：2011-03-03

申请人： Takayuki TOSHIMA ,  Mitsuaki IWASHITA ,  Kazuyuki MITSUOKA ,  Hidekazu OKAMOTO ,  Hideo NAMATSU

发明人： Takayuki TOSHIMA ,  Mitsuaki IWASHITA ,  Kazuyuki MITSUOKA ,  Hidekazu OKAMOTO ,  Hideo NAMATSU

IPC分类号： B08B5/00 ,  B08B13/00

CPC分类号： B08B5/00 ,  B08B13/00

摘要： Disclosed is a supercritical processing apparatus and a supercritical processing method for suppressing the pattern collapse or the injection of material constituting a processing liquid into a substrate. A processing chamber receives a substrate subjected to a processing with supercritical fluid, and a liquid supply unit supplies a processing liquid including a fluorine compound to the processing chamber. A liquid discharge unit discharges the supercritical fluid from the processing chamber, a pyrolysis ingredient removing unit removes an ingredient facilitating the pyrolysis of a liquid from the processing chamber or from the liquid supplied from the liquid supply unit, and a to heating unit heats the processing liquid including a fluorine compound of hydrofluoro ether or hydrofluoro carbon.

摘要翻译： 公开了一种超临界处理装置和超临界处理方法，用于抑制图案坍塌或将构成处理液的材料注入基板。 处理室接受用超临界流体处理的基板，液体供给单元向处理室供给包含氟化合物的处理液。 液体排出单元从处理室排出超临界流体，热解成分除去单元去除促进来自处理室的液体的热分解或从液体供应单元供应的液体的热分解，加热单元加热处理 包括氟氟醚或氢氟碳的氟化合物的液体。

公开(公告)号：US20110000512A1

公开(公告)日：2011-01-06

申请号：US12824565

申请日：2010-06-28

申请人： Takayuki TOSHIMA ,  Kazuo TERADA ,  Kazuyuki HONDA

发明人： Takayuki TOSHIMA ,  Kazuo TERADA ,  Kazuyuki HONDA

IPC分类号： B08B3/00

CPC分类号： B08B3/10 ,  H01L21/67057 ,  H01L21/67751 ,  Y10S134/902

摘要： Provided are a substrate processing apparatus and a substrate processing method capable of processing of a substrate using a supercritical fluid without exposing the pattern formed on the substrate to an atmospheric environment. The substrate processing apparatus includes a cleaning bath configured to accommodate a substrate and clean the substrate by flowing a cleaning solution, and a processing vessel configured to accommodate the cleaning bath and process the substrate with a supercritical fluid.

摘要翻译： 提供了一种基板处理装置和基板处理方法，其能够使用超临界流体处理基板，而不将形成在基板上的图案暴露于大气环境。 基板处理装置包括：清洗槽，其配置为容纳基板并通过流动清洁溶液清洁基板;以及处理容器，其构造成容纳清洗槽并用超临界流体处理基板。

公开(公告)号：US20100192992A1

公开(公告)日：2010-08-05

申请号：US12698455

申请日：2010-02-02

申请人： Takayuki TOSHIMA ,  Kazuo TERADA

发明人： Takayuki TOSHIMA ,  Kazuo TERADA

IPC分类号： B08B3/00 ,  H01L21/673 ,  H01L21/677

CPC分类号： H01L21/67057 ,  H01L21/67034 ,  H01L21/67346 ,  H01L21/67748 ,  H01L21/68742

摘要： Disclosed is a substrate carrying apparatus having a simple configuration capable of inhibiting the occurrence of pattern collapse. A carrying tray of the disclosed substrate carrying apparatus includes a bottom plate for supporting the substrate and a circumferential side wall being provided around the bottom plate. An opening is formed in the bottom plate. An elevating member, to and from which the substrate is to be transferred, passes through the opening. A space is temporarily formed in a carrying tray. The elevating member within the opening passes to the outside of the carrying tray through the space. When the substrate is carried, the liquid is reservoired within the carrying tray, and the substrate is carried while the liquid remained on the upper surface of the substrate.

摘要翻译： 公开了具有能够抑制图案塌陷的发生的简单结构的基板输送装置。 所公开的基板承载装置的承载托盘包括用于支撑基板的底板和围绕底板设置的周向侧壁。 在底板上形成开口。 升降构件，要从基板转移到其上并通过该开口。 暂时在搬运托盘中形成空间。 开口内的升降构件通过该空间传递到搬运托盘的外部。 当承载基板时，液体被储存在承载托盘内，并且在液体保留在基板的上表面上的同时承载基板。

公开(公告)号：US20120247516A1

公开(公告)日：2012-10-04

申请号：US13369970

申请日：2012-02-09

申请人： Yohei SATO ,  Hisashi OKUCHI ,  Hiroshi TOMITA ,  Hidekazu HAYASHI ,  Yukiko KITAJIMA ,  Takayuki TOSHIMA ,  Mitsuaki IWASHITA ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII

发明人： Yohei SATO ,  Hisashi OKUCHI ,  Hiroshi TOMITA ,  Hidekazu HAYASHI ,  Yukiko KITAJIMA ,  Takayuki TOSHIMA ,  Mitsuaki IWASHITA ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII

IPC分类号： B08B3/00 ,  F26B25/14 ,  F26B25/06

CPC分类号： F26B3/02

摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

摘要翻译： 根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇 在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态 醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。 房间包含SUS。 对室的内壁面进行电解抛光。

公开(公告)号：US20110000507A1

公开(公告)日：2011-01-06

申请号：US12652794

申请日：2010-01-06

申请人： Takayuki TOSHIMA ,  Kazuo TERADA

发明人： Takayuki TOSHIMA ,  Kazuo TERADA

IPC分类号： H01L21/00 ,  B08B3/00 ,  B08B13/00

CPC分类号： H01L21/02057 ,  H01L21/02101

摘要： Disclosed is a supercritical processing apparatus which can suppress the occurrence of pattern collapse, improve the throughput, and prolong a maintenance interval. In the disclosed supercritical processing apparatus to remove a liquid remained on a substrate by a super-critical state processing fluid, a heating unit heats the processing fluid to place the processing fluid into a processing receptacle in a supercritical state, and a cooling mechanism forcibly cools an area capable of transferring the heat to the substrate from the heating unit in order to suppress the liquid from being evaporated from the substrate until the substrate is disposed on a seating unit.

摘要翻译： 公开了一种超临界处理装置，其可以抑制图案崩溃的发生，提高生产量，并延长维护间隔。 在公开的超临界处理装置中，通过超临界状态处理流体去除残留在基板上的液体，加热单元加热处理流体，将处理流体置于超临界状态的处理容器中，冷却机构强制冷却 能够从加热单元将热量传递到基板的区域，以便抑制液体从基板蒸发直到基板设置在就座单元上。