公开(公告)号：US20110011425A1

公开(公告)日：2011-01-20

申请号：US12885279

申请日：2010-09-17

申请人： Takayuki TOSHIMA ,  Naoki Shindo ,  Hiroshi Yano ,  Kotaro Tsurusaki

发明人： Takayuki TOSHIMA ,  Naoki Shindo ,  Hiroshi Yano ,  Kotaro Tsurusaki

IPC分类号： B08B3/00

CPC分类号： H01L21/67034 ,  H01L21/67028 ,  H01L21/67757 ,  Y10S134/902

摘要： A substrate processing system 1 comprises: a processing tank 3 for processing substrates W with a processing liquid; a drying unit 6 disposed above the processing tank 3; and a carrying mechanism 8 for carrying the substrates W between the processing tank 3 and the drying unit 6. A processing gas supply line 21 for supplying a processing gas into the drying unit 6 and inert gas supply lines 24 and 25 for supplying an inert gas into the drying unit 6 are connected to the drying unit 6. A first discharge line for discharging an atmosphere purged from the drying unit 6 and a second discharge line 27 for forcibly exhausting the drying unit 6 are connected to the drying unit 6.

摘要翻译： 基板处理系统1包括：用处理液处理基板W的处理槽3; 设置在处理罐3上方的干燥单元6; 以及用于在处理罐3和干燥单元6之间承载基板W的承载机构8.用于向干燥单元6供应处理气体的处理气体供应管线21和用于供应惰性气体的惰性气体供应管线24和25 干燥单元6连接到干燥单元6.用于排出从干燥单元6吹扫的气氛的第一排出管线和用于强制排出干燥单元6的第二排出管线27连接到干燥单元6。

公开(公告)号：US07836900B2

公开(公告)日：2010-11-23

申请号：US10591971

申请日：2005-03-25

申请人： Takayuki Toshima ,  Naoki Shindo ,  Hiroshi Yano ,  Kotaro Tsurusaki

发明人： Takayuki Toshima ,  Naoki Shindo ,  Hiroshi Yano ,  Kotaro Tsurusaki

IPC分类号： B08B5/00

CPC分类号： H01L21/67034 ,  H01L21/67028 ,  H01L21/67757 ,  Y10S134/902

摘要： A substrate processing system 1 comprises: a processing tank 3 for processing substrates W with a processing liquid; a drying unit 6 disposed above the processing tank 3; and a carrying mechanism 8 for carrying the substrates W between the processing tank 3 and the drying unit 6. A processing gas supply line 21 for supplying a processing gas into the drying unit 6 and inert gas supply lines 24 and 25 for supplying an inert gas into the drying unit 6 are connected to the drying unit 6. A first discharge line for discharging an atmosphere purged from the drying unit 6 and a second discharge line 27 for forcibly exhausting the drying unit 6 are connected to the drying unit 6.

摘要翻译： 基板处理系统1包括：用处理液处理基板W的处理槽3; 设置在处理罐3上方的干燥单元6; 以及用于在处理罐3和干燥单元6之间承载基板W的承载机构8.用于向干燥单元6供应处理气体的处理气体供应管线21和用于供应惰性气体的惰性气体供应管线24和25 干燥单元6连接到干燥单元6.用于排出从干燥单元6吹扫的气氛的第一排出管线和用于强制排出干燥单元6的第二排出管线27连接到干燥单元6。

公开(公告)号：US20070175062A1

公开(公告)日：2007-08-02

申请号：US10591971

申请日：2005-03-25

申请人： Takayuki Toshima ,  Naoki Shindo ,  Hiroshi Yano ,  Kotaro Tsurusaki

发明人： Takayuki Toshima ,  Naoki Shindo ,  Hiroshi Yano ,  Kotaro Tsurusaki

IPC分类号： F26B21/06 ,  F26B5/04

CPC分类号： H01L21/67034 ,  H01L21/67028 ,  H01L21/67757 ,  Y10S134/902

摘要： A substrate processing system 1 comprises: a processing tank 3 for processing substrates W with a processing liquid; a drying unit 6 disposed above the processing tank 3; and a carrying mechanism 8 for carrying the substrates W between the processing tank 3 and the drying unit 6. A processing gas supply line 21 for supplying a processing gas into the drying unit 6 and inert gas supply lines 24 and 25 for supplying an inert gas into the drying unit 6 are connected to the drying unit 6. A first discharge line for discharging an atmosphere purged from the drying unit 6 and a second discharge line 27 for forcibly exhausting the drying unit 6 are connected to the drying unit 6.

摘要翻译： 基板处理系统1包括：用处理液处理基板W的处理槽3; 设置在处理罐3上方的干燥单元6; 以及用于在处理槽3和干燥单元6之间承载基板W的承载机构8。 将用于将干燥单元6中的处理气体供给到处理气体供给管线21和用于向干燥单元6供给惰性气体的惰性气体供给管线24和25连接到干燥单元6。 用于排出从干燥单元6吹扫的气氛的第一排出管线和用于强制排出干燥单元6的第二排出管线27连接到干燥单元6。

公开(公告)号：US07581335B2

公开(公告)日：2009-09-01

申请号：US11594232

申请日：2006-11-08

申请人： Hiroshi Tanaka ,  Hidetoshi Nakao ,  Naoki Shindo ,  Atushi Yamashita ,  Tsukasa Hirayama ,  Kotaro Tsurusaki

发明人： Hiroshi Tanaka ,  Hidetoshi Nakao ,  Naoki Shindo ,  Atushi Yamashita ,  Tsukasa Hirayama ,  Kotaro Tsurusaki

IPC分类号： F26B7/00

CPC分类号： H01L21/67028 ,  H01L21/67034 ,  Y10S118/90 ,  Y10S134/902

摘要： The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.

摘要翻译： 本发明提供一种干燥装置，其能够通过使用干燥蒸汽令工件干燥良好。干燥装置具有控制装置，用于控制载气的供给和干燥蒸气的供给到保持工件的处理罐中。 干燥工序进行供给载气的载气供给工序以及混合流体供给工序，供给通过交替地混合载气和干燥蒸气而制备的混合流体。 执行混合流体供给步骤的总混合流体供给时间不低于执行载气供给步骤和混合流体供给步骤的总处理时间的57％。

公开(公告)号：US20070113423A1

公开(公告)日：2007-05-24

申请号：US11594232

申请日：2006-11-08

申请人： Hiroshi Tanaka ,  Hidetoshi Nakao ,  Naoki Shindo ,  Atushi Yamashita ,  Tsukasa Hirayama ,  Kotaro Tsurusaki

发明人： Hiroshi Tanaka ,  Hidetoshi Nakao ,  Naoki Shindo ,  Atushi Yamashita ,  Tsukasa Hirayama ,  Kotaro Tsurusaki

IPC分类号： F26B3/00

CPC分类号： H01L21/67028 ,  H01L21/67034 ,  Y10S118/90 ,  Y10S134/902

摘要： The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.

摘要翻译： 本发明提供一种干燥装置，其能够通过使用干燥蒸汽令工件干燥良好。干燥装置具有控制装置，用于控制载气的供给和干燥蒸气的供给到保持工件的处理罐中。 干燥工序进行供给载气的载气供给工序以及混合流体供给工序，供给通过交替地混合载气和干燥蒸气而制备的混合流体。 执行混合流体供给步骤的总混合流体供给时间不低于执行载气供给步骤和混合流体供给步骤的总处理时间的57％。

公开(公告)号：US06869499B2

公开(公告)日：2005-03-22

申请号：US10157445

申请日：2002-05-28

申请人： Takayuki Toshima ,  Naoki Shindo ,  Tadashi Iino

发明人： Takayuki Toshima ,  Naoki Shindo ,  Tadashi Iino

IPC分类号： G03F7/42 ,  B08B7/00 ,  B08B9/08 ,  C23C16/00 ,  C23F1/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065

CPC分类号： B08B7/00 ,  B08B9/08

摘要： After semiconductor wafers W have been processed with ozone gas and steam fed into a processing vessel 10, air is fed into the processing vessel 10 from an air supply source connected to an ozone gas supply pipe 42 for feeding ozone gas into the processing vessel 10, whereby an atmosphere of the ozone gas in the processing vessel 10 is replaced with an atmosphere of the air.

摘要翻译： 半导体晶片W已经用臭氧气体和蒸汽进料到加工容器10中后，空气从连接到臭氧气体供应管42的空气供应源送入处理容器10，用于将臭氧气体输送到处理容器10中， 由此处理容器10中的臭氧气体的气氛被空气的气氛所代替。

公开(公告)号：US20090101186A1

公开(公告)日：2009-04-23

申请号：US11922502

申请日：2006-06-16

申请人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

发明人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

IPC分类号： B08B3/04

CPC分类号： H01L21/02057 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67057

摘要： Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.

摘要翻译： 公开了一种用于清洗和干燥诸如半导体晶片的衬底的衬底处理装置。 该基板处理装置包括：液体处理单元，用于通过将基板浸渍在储存的净化水中来处理基板;干燥单元，布置在液体处理单元上方并构造成干燥基板;基板输送装置，用于在液体处理 单元和干燥单元，用于将含有纯净水的蒸气或雾的挥发性有机溶剂的蒸气或雾的流体混合物供给到干燥单元的流体供给机构，以及用于控制流体混合物的供给的控制器。

公开(公告)号：US5730162A

公开(公告)日：1998-03-24

申请号：US583979

申请日：1996-01-11

申请人： Naoki Shindo ,  Shigenori Kitahara ,  Takayuki Toshima ,  Kenji Yokomizo

发明人： Naoki Shindo ,  Shigenori Kitahara ,  Takayuki Toshima ,  Kenji Yokomizo

IPC分类号： H01L21/00 ,  H01L21/306 ,  H01L21/677 ,  B08B13/00

CPC分类号： H01L21/67057 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/67781 ,  Y10S134/902 ,  Y10S414/137

摘要： A substrate washing apparatus includes a bath, a washing solution supply source, a first path for allowing the washing solution overflowing from the bath, a rinse solution supply source, a second path for passing the rinse solution, a common path communicating with the first and second paths and also with a bottom of the bath, a first valve, a second valve, a discharge path branched from the first path, and a control section, wherein the first valve includes a first body for opening/closing the first path, a third path arranged parallel to the first path and having a diameter smaller than a diameter of the first path, and a second body for opening/closing the third path, so that the first body is opened and the second body is closed, to allow the washing solution to flow into the bath, and on the other hand, the first body is closed, the second body is opened, to allow the rinse solution to flow into the bath, and the washing solution remaining in the first and third paths is discharged together with the rinse solution through the discharge path.

摘要翻译： 底物洗涤装置包括洗涤液，洗涤液供应源，用于使洗涤液从浴中溢出的第一路径，漂洗溶液供应源，用于通过冲洗溶液的第二路径，与第一和第二通道连通的共同路径 第二路径以及底部的第一阀，第一阀，第二阀，从第一路径分支的排出路径和控制部，其中第一阀包括用于打开/关闭第一路径的第一主体， 第三路径，其平行于第一路径布置并且具有小于第一路径的直径的直径;以及用于打开/关闭第三路径的第二主体，使得第一主体被打开并且第二主体被关闭，以允许 洗涤液流入浴中，另一方面关闭第一体，打开第二体，使冲洗液流入浴中，残留在第一和第三路径中的洗涤液排出 d与冲洗溶液一起通过排放路径。

公开(公告)号：US08303724B2

公开(公告)日：2012-11-06

申请号：US13206186

申请日：2011-08-09

申请人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

发明人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

IPC分类号： B08B3/00

CPC分类号： H01L21/02057 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67057

摘要： Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.

摘要翻译： 公开了一种用于清洗和干燥诸如半导体晶片的衬底的衬底处理装置。 该基板处理装置包括：液体处理单元，用于通过将基板浸渍在储存的净化水中来处理基板;干燥单元，布置在液体处理单元上方并构造成干燥基板;基板输送装置，用于在液体处理 单元和干燥单元，用于将含有纯净水的蒸气或雾的挥发性有机溶剂的蒸气或雾的流体混合物供给到干燥单元的流体供给机构，以及用于控制流体混合物的供给的控制器。

公开(公告)号：US20110290280A1

公开(公告)日：2011-12-01

申请号：US13206186

申请日：2011-08-09

申请人： Koukichi HIROSHIRO ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

发明人： Koukichi HIROSHIRO ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

IPC分类号： B08B3/00

CPC分类号： H01L21/02057 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67057

摘要： Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.

摘要翻译： 公开了一种用于清洗和干燥诸如半导体晶片的衬底的衬底处理装置。 该基板处理装置包括：液体处理单元，用于通过将基板浸渍在储存的净化水中来处理基板;干燥单元，布置在液体处理单元上方并构造成干燥基板;基板输送装置，用于在液体处理 单元和干燥单元，用于将含有纯净水的蒸气或雾的挥发性有机溶剂的蒸气或雾的流体混合物供给到干燥单元的流体供给机构，以及用于控制流体混合物的供给的控制器。