公开(公告)号：US5719468A

公开(公告)日：1998-02-17

申请号：US623830

申请日：1996-03-29

申请人： Hiroyoshi Takanishi ,  Kazunari Fukue ,  Tsutomu Watanabe ,  Hiroshi Kamata ,  Akira Kawakatsu

发明人： Hiroyoshi Takanishi ,  Kazunari Fukue ,  Tsutomu Watanabe ,  Hiroshi Kamata ,  Akira Kawakatsu

IPC分类号： F21S8/10 ,  H01J61/40 ,  H01K1/28 ,  H01K1/30 ,  H01K1/32 ,  H01K1/34 ,  H01K1/50 ,  H01K9/08

CPC分类号： H01K1/28 ,  H01J61/40 ,  H01K1/30 ,  H01K1/32 ,  H01K1/34 ,  H01K1/50 ,  H01K9/08 ,  Y02B20/125

摘要： An incandescent lamp has an envelope including a cylindrical portion and two hemispherical portions. Each hemispherical portion includes a second order curve which has a focus and is connected at one end of the cylindrical portion, respectively. A filament is provided along the central axis of the envelope and is located within and extends beyond a space surrounded by the cylindrical portion. An optical interference layer is arranged on a surface of the envelope to reflect infrared rays and transmit visible rays.

摘要翻译： 白炽灯具有包括圆柱形部分和两个半球形部分的外壳。 每个半球形部分包括具有焦点并分别连接在圆柱形部分的一端的二阶曲线。 灯丝沿外壳的中心轴线设置，并且位于由圆柱形部分包围的空间内并且延伸超过由圆柱形部分包围的空间。 光学干涉层布置在信封的表面上以反射红外线并透射可见光线。

公开(公告)号：US4652789A

公开(公告)日：1987-03-24

申请号：US740881

申请日：1985-06-03

申请人： Akira Kawakatsu ,  Tsutomu Watanabe ,  Yoji Yuge

发明人： Akira Kawakatsu ,  Tsutomu Watanabe ,  Yoji Yuge

IPC分类号： H01K1/28 ,  G02B5/28 ,  H01K1/32 ,  H01K1/26

CPC分类号： H01K1/325

摘要： This invention relates to an incandescent lamp bulb comprising a visible light transmitting and infrared ray reflecting film formed on at least either one of the inside and outside of a tubular, transparent bulb, said film being composed of a lamination of alternate high and low refractive index layers, wherein the optical film thickness of any one of the high reflective index layers ranges from 0.21 to 0.31.mu., that of the topmost low refractive index layer ranges from 1/2.times.0.21 to 1/2.times.0.31.mu., that of at least one low refractive index layer ranges from 2.times.0.21 to 2.times.0.31.mu., and that of any remainder low refractive index layer ranges from 0.21 to 0.31.mu..

摘要翻译： 本发明涉及一种白炽灯泡，其包括形成在管状透明灯泡的内部和外部中的至少一个中的可见光透射和红外线反射膜，所述膜由交替的高折射率低折射率 层，其中高折射率层中的任何一个的光学膜厚度范围为0.21至0.31μm，最低低折射率层的光学膜厚度范围为1 / 2x0.21至1 /2x0.31μm，至少为 一个低折射率层的范围为2×0.02至2×0.33μm，其余的低折射率层的范围为0.21至0.31μm。

公开(公告)号：US4998038A

公开(公告)日：1991-03-05

申请号：US279714

申请日：1988-12-05

申请人： Tsutomu Watanabe ,  Akira Kawakatsu ,  Makoto Bessho

发明人： Tsutomu Watanabe ,  Akira Kawakatsu ,  Makoto Bessho

IPC分类号： H01J9/20 ,  H01J61/35 ,  H01K1/32

CPC分类号： H01J9/20 ,  H01J61/35 ,  H01K1/32

摘要： A pitted light diffusive coating having an excellent light diffusion effect and a method of forming the coating and a halogen lamp with the coating are disclosed. The light diffusive coating includes pits on the surface of a continuous coating consisting of a metal oxide formed on a base, and the coating is substantially free of bubbles. The pitted light diffusive coating is formed by coating a base with an organometallic compound and a high boiling-point organic solvent and baking the coating at about 400.degree. C. to 500.degree. C. The halogen lamp has a pitted light diffusive coating formed on an infrared reflective coating on the surface of the outer vessel. Strain, caused by the difference in the thermal expansion coefficient of the structural material of the outer vessel and the structural material of the light diffusive layer occurring when the outer vessel is at a high temperature, is absorbed by the pitted structure, and peeling is prevented.

摘要翻译： 公开了具有优异的光扩散效应的凹陷光漫射涂层和形成涂层的方法和具有涂层的卤素灯。 光漫射涂层包括在由基底上形成的金属氧化物组成的连续涂层的表面上的凹坑，并且涂层基本上没有气泡。 凹陷光扩散涂层通过用有机金属化合物和高沸点有机溶剂涂覆基底并在约400℃至500℃下烘烤该涂层而形成。卤素灯具有凹陷的光漫射涂层，其形成在 红外反射涂层在外容器的表面上。 由外部容器的结构材料的热膨胀系数的差异和外部容器处于高温时发生的光漫射层的结构材料引起的应变由凹陷结构吸收，并且防止剥离 。

公开(公告)号：US06242862B1

公开(公告)日：2001-06-05

申请号：US09219902

申请日：1998-12-24

申请人： Akira Kawakatsu

发明人： Akira Kawakatsu

IPC分类号： H01J1716

CPC分类号： B01J35/004 ,  B01J35/002 ,  H01J61/35

摘要： This invention provides a photocatalytic membrane and a lamp and lighting fixture using such a membrane. The membrane is formed using an ultra fine particle dispersed liquid coating method providing improved adhesion of the membrane to a base body and provides a photocatalyzer that has a satisfactory light transmission factor and a lamp and a lighting fixture using it. The membrane is made of mainly ultra fine particles of titanium oxide, which enter into the uneven surface portions of a ground layer and are closely fitted thereto via the ground layer made of a metallic oxide with an uneven surface formed on the surface is formed on the base body. When the ground layer is made of metallic oxide and porous, the uneven surface is formed on the surface of the ground layer. Concave portions of the ground layer may be penetrated to the surface of the base body or a metallic oxide structural layer provided with a lot of penetrating holes may be formed on the surface of a photocatalytic membrane. Silicon oxide, titanium oxide and aluminum oxide are usable as a metallic oxide.

摘要翻译： 本发明提供一种使用这种膜的光催化膜和灯和照明器具。 使用超细颗粒分散液体涂覆方法形成膜，其提供膜对基体的改进的粘附性，并提供具有令人满意的透光率的光催化剂和使用其的灯和照明器具。 膜主要由氧化钛的超细颗粒制成，其进入接地层的不平坦表面部分并且通过由形成在表面上的具有不平坦表面的金属氧化物制成的接地层紧密地配合在其上形成在 基体 当接地层由金属氧化物制成并且多孔时，在接地层的表面上形成不平坦的表面。 也可以在光催化膜的表面上形成接地层的凹部到基体的表面，也可以形成具有大量贯通孔的金属氧化物结构层。 氧化硅，氧化钛和氧化铝可用作金属氧化物。

公开(公告)号：US5000528A

公开(公告)日：1991-03-19

申请号：US261938

申请日：1988-10-25

申请人： Akira Kawakatsu

发明人： Akira Kawakatsu

IPC分类号： G02B5/08 ,  G02B5/26 ,  G02B5/28

CPC分类号： G02B5/282 ,  G02B1/105

摘要： A plurality of refractive layers of an optical interference film includes at least an inner metal layer having a prescribed refractive index and an outer-most layer of a metallic nitride compound having a refractive index higher than the inner metal layer for protecting the inner metal layer from oxidation, reduction, crystallization, etc.

公开(公告)号：US4873200A

公开(公告)日：1989-10-10

申请号：US183883

申请日：1988-04-20

申请人： Akira Kawakatsu

发明人： Akira Kawakatsu

IPC分类号： H01L29/73 ,  H01L21/285 ,  H01L21/331 ,  H01L29/732

CPC分类号： H01L29/66272 ,  H01L21/28525 ,  Y10S148/01 ,  Y10S148/011

摘要： A method of fabricating a bipolar transistor on a semiconductor substrate capable of operating at a high operating speed and formed in a compact construction. A first polycrystalline silicon layer is oxidized selectively to form areas for forming base electrodes and a collector electrode. Boron is implanted into the polycrystalline silicon layer in a high concentration to form the base electrodes, the silicon dioxide film is removed to form an opening from a region for forming an emitter, the side wall of the opening is oxidized, an inactive base is formed in the polycrystalline silicon layer, active base is formed in the inactive base by implanting boron in the inactive base. Then, the entire surface of the device is coated with an oxide film and a second polycrystalline silicon layer. The polycrystalline silicon layer and the oxide film are removed selectively through a reactive ion etching process to leave the second polycrystalline silicon layer only over the side wall of an opening through which an emitter is exposed. A third polycrystalline silicon layer is then formed over the entire surface and arsenic is diffused in the third polycrystalline silicon layer to form the emitter, and then a silicide film is formed over the surface of the third polycrystalline silicon layer.

摘要翻译： 一种在半导体衬底上制造双极晶体管的方法，该半导体衬底能够以较高的工作速度工作并形成一个紧凑的结构。 选择性地氧化第一多晶硅层以形成用于形成基底电极和集电极的区域。 硼以高浓度注入到多晶硅层中以形成基极，去除二氧化硅膜，从形成发射极的区域形成开口，开口的侧壁被氧化，形成非活性碱 在多晶硅层中，通过在非活性碱中注入硼而在非活性碱中形成活性碱。 然后，器件的整个表面涂覆有氧化物膜和第二多晶硅层。 选择性地通过反应离子蚀刻工艺去除多晶硅层和氧化物膜，以使第二多晶硅层仅在暴露于发射体的开口的侧壁上。 然后在整个表面上形成第三多晶硅层，并且砷在第三多晶硅层中扩散以形成发射极，然后在第三多晶硅层的表面上形成硅化物膜。

公开(公告)号：US4731341A

公开(公告)日：1988-03-15

申请号：US913303

申请日：1986-09-30

申请人： Akira Kawakatsu

发明人： Akira Kawakatsu

IPC分类号： H01L29/73 ,  H01L21/033 ,  H01L21/285 ,  H01L21/331 ,  H01L29/732 ,  H01L21/265 ,  H01L21/385

CPC分类号： H01L21/28525 ,  H01L21/033

摘要： An improved bipolar semiconductor integrated circuit device which has a reduced base resistance and a reduced parasitic capacitance can be provided with a small number of manufacturing steps.A two-layered film composed of both a thin oxide film and a nitride film is formed on the surface of an impurity doped layer of a first conductivity type which is formed on a semiconductor substrate. A resist layer having an overhanging cross section is formed on a selected surface of the two-layered film. A high melting metal is deposited on the surface of the structure obtained by the above step in such manner that the metal does not cover the surface of the nitride film under the overhanging portion of the resist layer. The two-layered film under the overhanging portion of the resist layer is selectively removed to expose the surface of the impurity doped layer. A semiconductor material is deposited on an entire surface of the structure obtained by the above step, the semiconductor material being deposited under the overhanging portion of the resist layer. The resist layer is exposed to expose the surface of the nitride film.Impurities of a second conductivity type are then implanted into the semiconducting material, the surface of the semiconductor oxidized, and impurities are diffused from the semiconductor material later to form a diffused region in said impurity doped layer. The exposed nitride and oxide films are then removed and a semiconductor material layer containing said first conductivity type impurities is formed on the exposed surface of the impurity doped layer.

摘要翻译： 可以提供具有减小的基极电阻和降低的寄生电容的改进的双极半导体集成电路器件，其具有少量的制造步骤。 在半导体衬底上形成的第一导电类型的杂质掺杂层的表面上形成由薄氧化膜和氮化物膜构成的两层膜。 在双层膜的选定表面上形成具有悬垂截面的抗蚀剂层。 通过上述步骤获得的结构的表面上沉积高熔点金属，使得金属不覆盖抗蚀剂层的伸出部分下方的氮化物膜的表面。 选择性地去除抗蚀剂层的悬垂部分下的两层膜，以暴露杂质掺杂层的表面。 半导体材料沉积在通过上述步骤获得的结构的整个表面上，半导体材料沉积在抗蚀剂层的悬垂部分下方。 曝光抗蚀剂层以暴露氮化物膜的表面。 然后将第二导电类型的杂质注入到半导体材料中，半导体的表面被氧化，并且杂质稍后从半导体材料扩散，以在所述杂质掺杂层中形成扩散区。 然后去除暴露的氮化物和氧化物膜，并且在杂质掺杂层的暴露表面上形成包含所述第一导电型杂质的半导体材料层。

公开(公告)号：US4701663A

公开(公告)日：1987-10-20

申请号：US791110

申请日：1985-10-24

申请人： Akira Kawakatsu ,  Yooji Yuge ,  Noriyuki Hayama ,  Tokuyoshi Saito ,  Umio Maeda

发明人： Akira Kawakatsu ,  Yooji Yuge ,  Noriyuki Hayama ,  Tokuyoshi Saito ,  Umio Maeda

IPC分类号： H01K1/28 ,  H01K1/32 ,  H01K1/26

CPC分类号： H01K1/32

摘要： A lamp includes a glass bulb sealing a filament therein. A light interference film is formed on a surface of the bulb. The film has at least five layers and is formed by alternately stacking a low-refractive index layer comprising silicon oxide and a high-refractive index layer having a refractive index higher than said low-refractive index layer. The low-refractive index layer contains, at least one additive selected from the group consisting of phosphorus and boron.

摘要翻译： 灯包括在其中密封灯丝的玻璃灯泡。 在灯泡的表面上形成光干涉膜。 该膜具有至少五层，并且通过交替层叠包含氧化硅的低折射率层和折射率高于所述低折射率层的高折射率层而形成。 低折射率层含有选自磷和硼的至少一种添加剂。

公开(公告)号：US5146130A

公开(公告)日：1992-09-08

申请号：US538328

申请日：1990-06-15

申请人： Akira Kawakatsu

发明人： Akira Kawakatsu

IPC分类号： G02B5/28 ,  H01K1/32

CPC分类号： G02B5/282 ,  H01K1/32

摘要： Four different optical interference films are formed on the outer surface of an incandescent lamp to achieve good color rendering properties at a high color temperature. A first film formed on the lamp includes high and low refractive index layers alternately stacked so that the total number of layers is n (where n is odd number greater than 5) and the optical thickness thereof is 0.12.about.0.17 .mu.m. A second film formed on the first film has the low refractive index layer and the optical thickness of 0.132.about.0.2125 .mu.m, which is calculated by the equation (K+1).times.d/2, wherein K is 1.2.about.1.5 and d is the optical thickness of each refractive index layer of the first film. A third film formed on the second film has at least a high refractive index layer. The total number of refractive index layers of the third film is an odd number of 1.about.(n-4) and the optical thickness of each refractive index layer thereof is 0.144.about.0.255 .mu.m, which is calculated by the expression (K.times.d). A fourth film includes the low refractive index layer having the optical thickness of 0.0720.about.0.1275 .mu.m, which is calculated by the expression (K .times.d/2).

公开(公告)号：US4850661A

公开(公告)日：1989-07-25

申请号：US171268

申请日：1988-03-21

申请人： Akira Kawakatsu

发明人： Akira Kawakatsu

IPC分类号： G02B5/08 ,  G02B5/10 ,  G02B5/26 ,  G02B5/28

CPC分类号： G02B5/282 ,  G02B5/10

摘要： A reflection mirror includes a first interference filter layer arranged on one surface of a light permeable base for reflecting a large quantity of visible rays radiated from a light source and for transmitting a large quantity of infrared rays from the light source, a second interference filter layer arranged on the other surface of the base for transmitting a large amount of the infrared rays transmitting by the first intereference filter layer and for reflecting a large amount of the visible rays transmitted by the first interference filter layer toward the first interference filter layer. The infrared ray reflectance of the first interference filter layer is different from that of the second interference filter layer to increase the quantity of the infrared rays transmitted by the mirror through the second interference filter layer by a repeating reflection between the first and the second interference filter layers.

摘要翻译： 反射镜包括布置在透光基底的一个表面上的第一干涉滤光层，用于反射从光源辐射的大量可见光，并从光源传输大量红外线;第二干涉滤光层 布置在基座的另一个表面上，用于传输由第一干涉滤光层传输的大量红外线，并将大量由第一干涉滤光层传输的可见光反射到第一干涉滤光层。 第一干涉滤光层的红外线反射率与第二干涉滤光层的红外线反射率不同，以通过第一干涉滤光层和第二干涉滤光片之间的重复反射来增加由反射镜透过第二干涉滤光层发送的红外线的量 层。