利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

28 条记录 (耗时 0.034 秒)

    METHOD FOR PRODUCING LIQUID-DISCHARGE-HEAD SUBSTRATE
    3.
    发明申请
    METHOD FOR PRODUCING LIQUID-DISCHARGE-HEAD SUBSTRATE 有权
    生产液体放电头基板的方法

    公开(公告)号：US20120329181A1

    公开(公告)日：2012-12-27

    申请号：US13526958

    申请日：2012-06-19

    申请人： Ryotaro Murakami ,  Shuji Koyama ,  Keisuke Kishimoto ,  Kenta Furusawa

    发明人： Ryotaro Murakami ,  Shuji Koyama ,  Keisuke Kishimoto ,  Kenta Furusawa

    IPC分类号： H01L21/02

    CPC分类号： B41J2/1603 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1639

    摘要： A method for producing a liquid-discharge-head substrate includes a step of preparing a silicon substrate including, at a front-surface side of the silicon substrate, an energy generating element; a step of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a step of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a step of stopping the supply of the second etchant; and a step of, after the supply of the second etchant has been stopped, forming a liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant.

    摘要翻译： 一种液体排出头基板的制造方法，其特征在于，包括在所述硅基板的表面侧具有能量产生元件的硅基板的制造工序。 在所述硅基板的表面侧形成第一蚀刻剂导入孔的工序; 向在硅衬底的前表面侧形成的第一蚀刻剂引入孔中提供第一蚀刻剂并将第二蚀刻剂供应到硅衬底的背表面的步骤; 停止供应第二蚀刻剂的步骤; 以及在第二蚀刻液的供应已经停止之后，通过供给第一蚀刻剂形成延伸穿过硅衬底的前表面和后表面的液体供给口的步骤。

    Method for producing liquid-discharge-head substrate
    7.
    发明授权
    Method for producing liquid-discharge-head substrate 有权
    液体排出头基板的制造方法

    公开(公告)号：US08951815B2

    公开(公告)日：2015-02-10

    申请号：US13526958

    申请日：2012-06-19

    申请人： Ryotaro Murakami ,  Shuji Koyama ,  Keisuke Kishimoto ,  Kenta Furusawa

    发明人： Ryotaro Murakami ,  Shuji Koyama ,  Keisuke Kishimoto ,  Kenta Furusawa

    IPC分类号： H01L21/00 ,  B41J2/16

    CPC分类号： B41J2/1603 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1639

    摘要： A method for producing a liquid-discharge-head substrate includes a step of preparing a silicon substrate including, at a front-surface side of the silicon substrate, an energy generating element; a step of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a step of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a step of stopping the supply of the second etchant; and a step of, after the supply of the second etchant has been stopped, forming a liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant.

    摘要翻译： 一种液体排出头基板的制造方法，其特征在于，包括在所述硅基板的表面侧具有能量产生元件的硅基板的制造工序。 在所述硅基板的表面侧形成第一蚀刻剂导入孔的工序; 向在硅衬底的前表面侧形成的第一蚀刻剂引入孔中提供第一蚀刻剂并将第二蚀刻剂供应到硅衬底的背表面的步骤; 停止供应第二蚀刻剂的步骤; 以及在第二蚀刻液的供应已经停止之后，通过供给第一蚀刻剂形成延伸穿过硅衬底的前表面和后表面的液体供给口的步骤。

    PROCESSING METHOD OF SILICON SUBSTRATE AND PROCESS FOR PRODUCING LIQUID EJECTION HEAD
    8.
    发明申请
    PROCESSING METHOD OF SILICON SUBSTRATE AND PROCESS FOR PRODUCING LIQUID EJECTION HEAD 审中-公开
    硅基板的加工方法和生产液体喷射头的方法

    公开(公告)号：US20120088317A1

    公开(公告)日：2012-04-12

    申请号：US13226113

    申请日：2011-09-06

    申请人： Keisuke Kishimoto ,  Shuji Koyama ,  Hiroyuki Abo ,  Taichi Yonemoto

    发明人： Keisuke Kishimoto ,  Shuji Koyama ,  Hiroyuki Abo ,  Taichi Yonemoto

    IPC分类号： H01L21/308

    CPC分类号： B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1639

    摘要： A processing method of a silicon substrate, including forming on a back surface of a silicon substrate an etching mask layer having an opening portion, measuring a thickness of the silicon substrate, irradiating the opening portion in the etching mask layer with laser from the back surface of the silicon substrate to form in the silicon substrate a modified layer with a thickness that is varied according to the measured thickness of the silicon substrate, carrying out anisotropic etching with regard to the silicon substrate having the modified layer formed therein to form in the back surface a depressed portion which does not pass through the silicon substrate and which has a bottom surface in the silicon substrate, and carrying out dry etching in the depressed portion to form a through-hole passing from the bottom surface of the depressed portion to a front surface of the silicon substrate.

    摘要翻译： 一种硅衬底的处理方法，包括在硅衬底的背表面上形成具有开口部分的蚀刻掩模层，测量硅衬底的厚度，用激光从背面照射蚀刻掩模层中的开口部分 的硅衬底，以在硅衬底中形成具有根据测量的硅衬底的厚度而变化的厚度的改性层，相对于其中形成有改性层的硅衬底进行各向异性蚀刻以在背面形成 表面没有通过硅衬底并且在硅衬底中具有底表面的凹陷部分，并且在凹陷部分中进行干蚀刻以形成从凹陷部分的底表面到前面的通孔 硅衬底的表面。

    Method for manufacturing liquid discharge head substrate
    9.
    发明授权
    Method for manufacturing liquid discharge head substrate 有权
    液体排出头基板的制造方法

    公开(公告)号：US08613862B2

    公开(公告)日：2013-12-24

    申请号：US12203612

    申请日：2008-09-03

    申请人： Kazuhiro Asai ,  Hirokazu Komuro ,  Satoshi Ibe ,  Takuya Hatsui ,  Shimpei Otaka ,  Hiroto Komiyama ,  Keisuke Kishimoto

    发明人： Kazuhiro Asai ,  Hirokazu Komuro ,  Satoshi Ibe ,  Takuya Hatsui ,  Shimpei Otaka ,  Hiroto Komiyama ,  Keisuke Kishimoto

    IPC分类号： G01D15/00 ,  G11B5/127

    CPC分类号： B41J2/1603 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1635 ,  B41J2/1639 ,  B41J2/1645

    摘要： A manufacturing method, for a liquid discharge head substrate that includes a silicon substrate in which a liquid supply port is formed, includes the steps of: preparing the silicon substrate, on one face of which a mask layer, in which an opening has been formed, is deposited; forming a first recessed portion in the silicon substrate, so that the recessed portion is extended through the opening from the one face of the silicon substrate to the other, reverse face of the silicon substrate; forming a second recessed portion by performing wet etching for the substrate, via the first recessed portion, using the mask layer; and performing dry etching for the silicon substrate in a direction from the second recessed portion to the other face.

    摘要翻译： 一种液体排出头基板的制造方法，其特征在于，具备形成有液体供给口的硅基板的液体排出头基板的制造方法，其特征在于，包括以下工序：制作所述硅基板，在其一面上形成有开口的掩模层 ，存放 在所述硅衬底中形成第一凹部，使得所述凹部从所述硅衬底的一个面向所述开口延伸到所述硅衬底的另一面; 通过使用掩模层经由第一凹部对基板进行湿法蚀刻来形成第二凹部; 并且在从第二凹部到另一面的方向上对硅衬底进行干蚀刻。