摘要:
There is provided an angle sensor and angle detection device of high output and high accuracy with a wide operating temperature range. First through eighth sensor units 511, 522, 523, 514, 531, 542, 543 and 534 are produced from spin valve magnetoresistive films that use a self-pinned type ferromagnetic pinned layer comprising two layers of ferromagnetic films that are strongly and anti-ferromagnetically coupled. The respective sensor units are produced via the formation and patterning of thin-films magnetized at angles that differ by 90°, and the formation of insulation films. By using, for the ferromagnetic films, CoFe and FeCo films that have similar Curie temperatures to make the difference in magnetization amount be zero, high immunity to external magnetic fields, a broad adaptive temperature range, and high output are realized.
摘要:
To provide a magnetic encoder having high resolution and a high output, and a magnetoresistive sensor for an encoder. A fine sensor having a reduced demagnetization field is produced by: forming a free layer consists of a laminated soft magnetic film in which two soft magnetic layers are coupled in anti-parallel, and setting the width of a sensor unit to 2 μm to 4 μm.
摘要:
To provide a magnetic encoder having high resolution and a high output, and a magnetoresistive sensor for an encoder. A fine sensor having a reduced demagnetization field is produced by: forming a free layer consists of a laminated soft magnetic film in which two soft magnetic layers are coupled in anti-parallel, and setting the width of a sensor unit to 2 μm to 4 μm.
摘要:
There is provided an angle sensor and angle detection device of high output and high accuracy with a wide operating temperature range. First through eighth sensor units 511, 522, 523, 514, 531, 542, 543 and 534 are produced from spin valve magnetoresistive films that use a self-pinned type ferromagnetic pinned layer comprising two layers of ferromagnetic films that are strongly and anti-ferromagnetically coupled. The respective sensor units are produced via the formation and patterning of thin-films magnetized at angles that differ by 90°, and the formation of insulation films. By using, for the ferromagnetic films, CoFe and FeCo films that have similar Curie temperatures to make the difference in magnetization amount be zero, high immunity to external magnetic fields, a broad adaptive temperature range, and high output are realized.
摘要:
The present invention provides a magnetic sensor suitable for high resolution and having high reliability by achieving stable output even at the occurrence of variations in a gap between a magnetic medium and the magnetic sensor, and a magnetic encoder using the magnetic sensor. The present invention uses a magnetoresistive element having magnetoresistive properties that satisfy the inequation, H10−50
摘要:
To provide a method which can define the direction and orientation of magnetization of a pinned layer while reducing the number of steps of forming a GMR film. The magnetization direction of the pinned layer is defined in a plurality of directions by forming a plurality of patterns having directivities. Further, when the magneto-resistive effect film is formed, a magnetic field is applied in a direction at an angle set between the angles of the plurality of patterns.
摘要:
To provide a method which can define the direction and orientation of magnetization of a pinned layer while reducing the number of steps of forming a GMR film. The magnetization direction of the pinned layer is defined in a plurality of directions by forming a plurality of patterns having directivities. Further, when the magneto-resistive effect film is formed, a magnetic field is applied in a direction at an angle set between the angles of the plurality of patterns.
摘要:
A fall detection device is provided, which accomplishes a fall judgment on acceleration by a simple calculation and improves uniformity of effective threshold value for the acceleration judgment as to a direction of an applied acceleration vector. The fall detection device produces a fall detection signal when an absolute value of each axis component of an acceleration measured by a three-axis acceleration sensor is less than a first threshold value, and when a sum of the absolute values of the axis components of the acceleration is less than a second threshold value that is 1.5 times to twice the first threshold value.
摘要:
A free fall detection device capable of detecting a fall accompanied by rotation is provided. A fall accompanied by rotation is detected based on a waveform of an acceleration signal output from the acceleration detection unit and an angular velocity signal output from the angular velocity detection unit. A gravity center acceleration of the device to be protected is calculated from the acceleration detected by the acceleration detection unit and from the angular velocity detected by the angular velocity detection unit. Even when the device being protected rotates as it falls, the fall of the device can be detected from the detected acceleration or angular velocity. Further, by calculating the gravity center acceleration not affected by the rotation, it is possible to detect a fall of the device with high precision even if the device rotates as it falls.
摘要:
A magnetic medium is magnetized in the relative movement direction at a predefined pitch km and a magnetic sensor includes plural magnetoresistive elements whose electrical resistance value changes depending on a magnetic field at a place where the magnetoresistive element is disposed. A position where the magnetoresistive element is disposed is defined as a reference position and, in addition to the magnetoresistive element of this reference position, the magnetoresistive elements as harmonic reducing patterns are disposed at the following positions, with P(n) defined as the n-th prime: a position offset by λm/(2·P(n)) from the reference position toward at least one side of the relative movement direction, wherein N≧n>1 and N is a natural number satisfying N>3, and a position further offset by λm/(2·P(L+1)) from a position offset by λm/(2·P(L)), wherein 1