摘要:
There is provided an angle sensor and angle detection device of high output and high accuracy with a wide operating temperature range. First through eighth sensor units 511, 522, 523, 514, 531, 542, 543 and 534 are produced from spin valve magnetoresistive films that use a self-pinned type ferromagnetic pinned layer comprising two layers of ferromagnetic films that are strongly and anti-ferromagnetically coupled. The respective sensor units are produced via the formation and patterning of thin-films magnetized at angles that differ by 90°, and the formation of insulation films. By using, for the ferromagnetic films, CoFe and FeCo films that have similar Curie temperatures to make the difference in magnetization amount be zero, high immunity to external magnetic fields, a broad adaptive temperature range, and high output are realized.
摘要:
The present invention provides a magnetic sensor suitable for high resolution and having high reliability by achieving stable output even at the occurrence of variations in a gap between a magnetic medium and the magnetic sensor, and a magnetic encoder using the magnetic sensor. The present invention uses a magnetoresistive element having magnetoresistive properties that satisfy the inequation, H10−50
摘要:
To provide a magnetic encoder having high resolution and a high output, and a magnetoresistive sensor for an encoder. A fine sensor having a reduced demagnetization field is produced by: forming a free layer consists of a laminated soft magnetic film in which two soft magnetic layers are coupled in anti-parallel, and setting the width of a sensor unit to 2 μm to 4 μm.
摘要:
To provide a magnetic encoder having high resolution and a high output, and a magnetoresistive sensor for an encoder. A fine sensor having a reduced demagnetization field is produced by: forming a free layer consists of a laminated soft magnetic film in which two soft magnetic layers are coupled in anti-parallel, and setting the width of a sensor unit to 2 μm to 4 μm.
摘要:
Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability. According to one embodiment, a magnetoresistive layered film is formed by stacking an underlayer film, an antiferromagnetic film, a ferromagnetic pinned layer, a non-magnetic intermediate layer, a soft magnetic free layer, a long distance antiparallel coupling layered film, and a differential soft magnetic free layer. The long distance antiparallel coupling layered film exchange-couples the soft magnetic free layer and the differential soft magnetic free layer in an antiparallel state with a distance of about 3 nanometers through 20 nanometers. By manufacturing the single element type differential magnetoresistive magnetic head using the magnetoresistive layered film, it becomes possible to achieve the high resolution and the high manufacturing stability without spoiling the GMR effect.
摘要:
Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability. According to one embodiment, a magnetoresistive layered film is formed by stacking an underlayer film, an antiferromagnetic film, a ferromagnetic pinned layer, a non-magnetic intermediate layer, a soft magnetic free layer, a long distance antiparallel coupling layered film, and a differential soft magnetic free layer. The long distance antiparallel coupling layered film exchange-couples the soft magnetic free layer and the differential soft magnetic free layer in an antiparallel state with a distance of about 3 nanometers through 20 nanometers. By manufacturing the single element type differential magnetoresistive magnetic head using the magnetoresistive layered film, it becomes possible to achieve the high resolution and the high manufacturing stability without spoiling the GMR effect.
摘要:
To provide a method which can define the direction and orientation of magnetization of a pinned layer while reducing the number of steps of forming a GMR film. The magnetization direction of the pinned layer is defined in a plurality of directions by forming a plurality of patterns having directivities. Further, when the magneto-resistive effect film is formed, a magnetic field is applied in a direction at an angle set between the angles of the plurality of patterns.
摘要:
To provide a method which can define the direction and orientation of magnetization of a pinned layer while reducing the number of steps of forming a GMR film. The magnetization direction of the pinned layer is defined in a plurality of directions by forming a plurality of patterns having directivities. Further, when the magneto-resistive effect film is formed, a magnetic field is applied in a direction at an angle set between the angles of the plurality of patterns.
摘要:
Embodiments of the invention provide a spin-valve type magnetic head that satisfies the requirements of both high read output and stability with narrow tracks. In one embodiment, a domain control film is formed on a magnetoresistive layered film in the same track width. A double closed flux path structure that uses three magnetic layers is employed with magnetic coupled structure in both ends of the track. The three magnetic layers are a soft magnetic free layer, a domain-stabilization ferromagnetic layer, and a soft magnetic anti-parallel layer.
摘要:
A spin-valve type magnetic head which has sufficiently high output is provided. In one embodiment, a structure in which high output coexists with high stability is achieved by letting a GMR-effect and a current-path-confinement effect manifest themselves at the same time in a GMR-screen layer consisting of a ferromagnetic metal spike-like part and a half-covering oxide layer.