公开(公告)号：US07084399B2

公开(公告)日：2006-08-01

申请号：US10973304

申请日：2004-10-27

申请人： Hiroyuki Muto ,  Tohru Ishitani ,  Yuichi Madokoro

发明人： Hiroyuki Muto ,  Tohru Ishitani ,  Yuichi Madokoro

IPC分类号： H01J37/26

CPC分类号： H01J37/3005 ,  H01J2237/304 ,  H01J2237/3114

摘要： For the sake of realizing high throughput and high processing position accuracy in an ion beam apparatus, two kinds of ion beams for processing are prepared of which one is a focusing ion beam for high image resolution and an edge processing ion beam of large beam current for permitting a sectional edge portion to be processed sharply, whereby high processing position accuracy can be ensured even with a large current ion beam.

公开(公告)号：US20050279952A1

公开(公告)日：2005-12-22

申请号：US11151425

申请日：2005-06-14

申请人： Tohru Ishitani ,  Hiroyuki Muto ,  Yuichi Madokoro

发明人： Tohru Ishitani ,  Hiroyuki Muto ,  Yuichi Madokoro

IPC分类号： G21K5/10

CPC分类号： H01J37/28 ,  H01J37/12 ,  H01J2237/04924 ,  H01J2237/121 ,  H01J2237/31749

摘要： In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical system the distance from an emitter apex in an ion source to an earth electrode included in a condenser lens and disposed nearest to the ion source is in the range of 5 to 14 mm.

摘要翻译： 为了在MEMS和半导体器件的结构分析和故障分析中实现更快的高精度铣削和高分辨率图像观察，将双透镜光学系统安装在聚焦离子束装置上，并且在光学系统中距离 离子源中的发射极顶点包括在聚光透镜中并且最靠近离子源设置的接地电极在5至14mm的范围内。

公开(公告)号：US07235798B2

公开(公告)日：2007-06-26

申请号：US11151425

申请日：2005-06-14

申请人： Tohru Ishitani ,  Hiroyuki Muto ,  Yuichi Madokoro

发明人： Tohru Ishitani ,  Hiroyuki Muto ,  Yuichi Madokoro

IPC分类号： G21K5/10

CPC分类号： H01J37/28 ,  H01J37/12 ,  H01J2237/04924 ,  H01J2237/121 ,  H01J2237/31749

摘要： In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical system the distance from an emitter apex in an ion source to an earth electrode included in a condenser lens and disposed nearest to the ion source is in the range of 5 to 14 mm.

摘要翻译： 为了在MEMS和半导体器件的结构分析和故障分析中实现更快的高精度铣削和高分辨率图像观察，将双透镜光学系统安装在聚焦离子束装置上，并且在光学系统中距离 离子源中的发射极顶点包括在聚光透镜中并且最靠近离子源设置的接地电极在5至14mm的范围内。

公开(公告)号：US20050092922A1

公开(公告)日：2005-05-05

申请号：US10973304

申请日：2004-10-27

申请人： Hiroyuki Muto ,  Tohru Ishitani ,  Yuichi Madokoro

发明人： Hiroyuki Muto ,  Tohru Ishitani ,  Yuichi Madokoro

IPC分类号： G01N23/00 ,  G21K7/00 ,  H01J37/30

CPC分类号： H01J37/3005 ,  H01J2237/304 ,  H01J2237/3114

摘要： For the sake of realizing high throughput and high processing position accuracy in an ion beam apparatus, two kinds of ion beams for processing are prepared of which one is a focusing ion beam for high image resolution and an edge processing ion beam of large beam current for permitting a sectional edge portion to be processed sharply, whereby high processing position accuracy can be ensured even with a large current ion beam.

摘要翻译： 为了在离子束装置中实现高吞吐量和高处理位置精度，准备两种用于处理的离子束，其中一种是用于高分辨率的聚焦离子束和用于大束流的边缘处理离子束 允许边缘部分被尖锐地加工，从而即使用大的电流离子束也能够确保高的加工位置精度。

公开(公告)号：US06822245B2

公开(公告)日：2004-11-23

申请号：US09794828

申请日：2001-02-27

申请人： Hiroyuki Muto ,  Tohru Ishitani ,  Yuichi Madokoro

发明人： Hiroyuki Muto ,  Tohru Ishitani ,  Yuichi Madokoro

IPC分类号： G21K510

CPC分类号： H01J37/3056 ,  H01J37/28 ,  H01J37/304 ,  H01J2237/206 ,  H01J2237/21 ,  H01J2237/3174 ,  H01J2237/31749

摘要： For the sake of realizing high throughput and high processing position accuracy in an ion beam apparatus, two kinds of ion beams for processing are prepared of which one is a focusing ion beam for high image resolution and an edge processing ion beam of large beam current for permitting a sectional edge portion to be processed sharply, whereby high processing position accuracy can be ensured even with a large current ion beam.

摘要翻译： 为了在离子束装置中实现高吞吐量和高处理位置精度，准备两种用于处理的离子束，其中一种是用于高分辨率的聚焦离子束和用于大束流的边缘处理离子束 允许边缘部分被尖锐地加工，从而即使用大的电流离子束也能够确保高的加工位置精度。

公开(公告)号：US07804073B2

公开(公告)日：2010-09-28

申请号：US12076481

申请日：2008-03-19

申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC分类号： H01J49/10 ,  H01J27/02

CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

公开(公告)号：US07420181B2

公开(公告)日：2008-09-02

申请号：US11730803

申请日：2007-04-04

申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC分类号： H01J37/317 ,  G21K5/00 ,  G01N23/00

CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

公开(公告)号：US20050127304A1

公开(公告)日：2005-06-16

申请号：US11004903

申请日：2004-12-07

申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC分类号： H01J27/26 ,  G21G5/00 ,  H01J27/00 ,  H01J27/02 ,  H01J37/08

CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

公开(公告)号：US20070257200A1

公开(公告)日：2007-11-08

申请号：US11730803

申请日：2007-04-04

申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC分类号： H01J27/02

CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

公开(公告)号：US20080210883A1

公开(公告)日：2008-09-04

申请号：US12076481

申请日：2008-03-19

申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC分类号： G21G5/00

CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。