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    Joint body of aluminum and silicon nitride and method of preparing the same
    1.
    发明授权
    Joint body of aluminum and silicon nitride and method of preparing the same 失效
    铝和氮化硅接头体及其制备方法

    公开(公告)号：US5904993A

    公开(公告)日：1999-05-18

    申请号：US648178

    申请日：1996-05-21

    申请人： Hisao Takeuchi ,  Koichi Sogabe ,  Takao Nishioka ,  Takashi Matsuura ,  Akira Yamakawa

    发明人： Hisao Takeuchi ,  Koichi Sogabe ,  Takao Nishioka ,  Takashi Matsuura ,  Akira Yamakawa

    IPC分类号： B23K20/00 ,  B23K20/02 ,  C04B37/02 ,  B23B15/04 ,  B22F7/00 ,  B23K1/19

    CPC分类号： B23K20/023 ,  B23K2203/10 ,  Y10T428/12535 ,  Y10T428/12576 ,  Y10T428/31678

    摘要： A joint body in which aluminum and silicon nitride are strongly joined with each other is provided at a low cost, thereby providing a lightweight part which is excellent in sliding property as a mechanical part of an internal combustion engine of an automobile or the like. The joint body includes a base material which is mainly composed of aluminum, and a member consisting of a silicon nitride sintered body which is substantially directly joined to the base material. A powdery or bulky base material (2) mainly composed of aluminum, and a member (1) consisting of a silicon nitride sintered body are charged in a mold and heated under pressurization, thereby joining the same with each other.

    摘要翻译： PCT No.PCT / JP95 / 01870 Sec。 371日期：1996年5月21日 102（e）日期1996年5月21日PCT提交1995年9月20日PCT公布。 公开号WO96 / 09266 日期：1996年3月28日以低成本提供铝和氮化硅彼此牢固地接合的接头体，从而提供作为汽车内燃机的机械部件的滑动性优异的轻质部件 或类似物。 接合体包括主要由铝构成的基材和由基本上直接接合到基材的氮化硅烧结体构成的部件。 主要由铝构成的粉状或体积大的基材（2）和由氮化硅烧结体构成的部件（1）加入到模具中并在加压下加热，从而将它们彼此接合。

    Process for producing silicon nitride sliding member
    2.
    发明授权
    Process for producing silicon nitride sliding member 失效
    氮化硅滑动构件的制造方法

    公开(公告)号：US5961907A

    公开(公告)日：1999-10-05

    申请号：US920452

    申请日：1997-08-29

    申请人： Masamichi Yamagiwa ,  Akira Yamakawa ,  Takao Nishioka ,  Takashi Matsuura

    发明人： Masamichi Yamagiwa ,  Akira Yamakawa ,  Takao Nishioka ,  Takashi Matsuura

    IPC分类号： F16C33/24 ,  C04B35/584 ,  C04B35/593 ,  C04B41/80 ,  F01L1/14 ,  F01L3/02 ,  F16C33/04 ,  B29C49/00

    CPC分类号： C04B35/593 ,  F01L1/14 ,  F01L3/02 ,  F16C33/043 ,  F01L2105/02

    摘要： A silicon nitride ceramic sliding member which includes Si.sub.3 N.sub.4 grains as a main component and is shaped or controlled in dimensions through hot plastic working wherein the Si.sub.3 N.sub.4 particles mainly includes .beta.-type columnar crystal grains. The ceramic sliding member is produced by the step (I) of preparing a preform made of silicon nitride ceramic sintered body including Si.sub.3 N.sub.4 grains as a main component wherein the average grain size (average grain size in minor axis in the case of .beta.-type columnar crystal grains) of the Si.sub.3 N.sub.4 grains is at most 0.5 .mu.m, and the hot plastic working step (II) of placing the preform in a mold and effecting hot plastic deformation of the preform for shaping or dimensional control thereof while simultaneously increasing the average aspect ratio of the .beta.-type columnar crystal grains. The resultant sliding member has excellent sliding properties, a high mechanical strength and a high reliability at a low cost without resort to grinding or the like for shaping thereof.

    摘要翻译： 一种氮化硅陶瓷滑动构件，其包括Si 3 N 4晶粒作为主要成分，并通过热塑性加工成型或尺寸控制，其中Si 3 N 4颗粒主要包括β型柱状晶粒。 陶瓷滑动构件是通过制备由包含Si 3 N 4晶粒作为主要成分的氮化硅陶瓷烧结体制成的预制件的步骤（I）制备的，其中平均晶粒度（在β型柱状的情况下为短轴的平均晶粒尺寸 Si3N4晶粒的晶粒度为0.5μm以下，热塑性加工工序（II）将预成型体放置在模具中，并对预制件进行热塑性变形以进行成形或尺寸控制，同时增加平均面积 β型柱状晶粒的比例。 所得的滑动构件具有优异的滑动性能，高机械强度和高可靠性，而不需要用于成型的研磨等。

    Manufacturing method for silicon nitride-based sintered body
    3.
    发明授权
    Manufacturing method for silicon nitride-based sintered body 失效
    氮化硅基烧结体的制造方法

    公开(公告)号：US5720917A

    公开(公告)日：1998-02-24

    申请号：US638587

    申请日：1996-04-29

    申请人： Takashi Matsuura ,  Takao Nishioka ,  Akira Yamakawa

    发明人： Takashi Matsuura ,  Takao Nishioka ,  Akira Yamakawa

    IPC分类号： C04B35/584 ,  C04B35/593 ,  C04B35/64

    CPC分类号： C04B35/584 ,  C04B35/593

    摘要： The invention aims to offer a method to manufacture a high-strength, high-reliability and low cost silicon nitride based sintered body which is not affected by the amount of metal impurities contained in the silicon nitride powder, without using high-purity silicon nitride powder, and can be sintered for a short sintering time. The invention uses silicon nitride and sintering aids, and the powder mixture containing 500-5000 ppm metal impurities is sintered at temperatures ranging from 1300.degree.-1900.degree. C., and under the conditions wherein the product of sintering temperature and sintering time ranges from 1.times.10.sup.5 to 10.times.10.sup.5 .degree. C. .multidot.seconds.

    摘要翻译： 本发明旨在提供一种制造高强度，高可靠性和低成本的氮化硅基烧结体的方法，其不受氮化硅粉末中所含的金属杂质的量的影响，而不使用高纯氮化硅粉末 并且可以在短的烧结时间下烧结。 本发明使用氮化硅和烧结助剂，并且将含有500-5000ppm金属杂质的粉末混合物在1300-119℃的温度下烧结，并且在烧结温度和烧结时间范围为1×10 5 至10×105℃×秒。

    Silicon nitride based sintered body
    4.
    发明授权
    Silicon nitride based sintered body 失效
    氮化硅基烧结体

    公开(公告)号：US5622905A

    公开(公告)日：1997-04-22

    申请号：US269021

    申请日：1994-06-30

    申请人： Takashi Matsuura ,  Akira Yamakawa ,  Masaya Miyake

    发明人： Takashi Matsuura ,  Akira Yamakawa ,  Masaya Miyake

    IPC分类号： C04B35/584 ,  C04B35/64 ,  C04B35/587 ,  C04B35/599

    CPC分类号： C04B35/64 ,  C04B35/584

    摘要： Discloses a silicon nitride based sintered body composed only of uniform, fine crystal grains, and improved in both strength and fracture toughness in the middle and low temperature ranges. A crystalline silicon nitride powder composed of crystal grains whose longer-axis diameter is not more than 200 nm or an amorphous silicon nitride powder is used as material powder. The silicon nitride powder is sintered at a temperature of 1200.degree. C. to 1400.degree. C. or sintered with a product of sintering temperature (.degree. C.) and sintering time (sec) below 600000 (.degree. C..multidot.sec) at a temperature of 1400.degree. C. to 1900.degree. C. Thus, a silicon nitride based sintered body in which the longer-axis diameter of silicon nitride and/or sialon crystals is not more than 200 nm is obtained.

    摘要翻译： 公开了仅由均匀的细晶粒组成的氮化硅基烧结体，并且在中低温范围内提高了强度和断裂韧性。 使用由长轴径不大于200nm的晶粒构成的结晶氮化硅粉末或非晶氮化硅粉末作为原料粉末。 氮化硅粉末在1200℃至1400℃的温度下烧结，或烧结温度（℃）和烧结时间（秒）低于600000℃（℃）的产物在温度为 1400℃〜1900℃。因此，得到氮化硅和/或赛隆晶体的长径比不大于200nm的氮化硅系烧结体。

    Method of producing a silicon nitride based sintered body
    6.
    发明授权
    Method of producing a silicon nitride based sintered body 失效
    制造氮化硅基烧结体的方法

    公开(公告)号：US5698156A

    公开(公告)日：1997-12-16

    申请号：US448189

    申请日：1995-05-23

    申请人： Takashi Matsuura ,  Akira Yamakawa ,  Hasaya Miyake

    发明人： Takashi Matsuura ,  Akira Yamakawa ,  Hasaya Miyake

    IPC分类号： C04B35/584 ,  C04B35/64 ,  C04B33/32 ,  C04B33/34 ,  C04B33/36 ,  C04B35/71

    CPC分类号： C04B35/584 ,  C04B35/64

    摘要： Provided herein is a me silicon nitride based sintered body composed only of uniform, fine crystal grains, and improved in both strength and fracture toughness in the middle and low temperature ranges. The crystalline silicon nitride powder thus produced is composed of crystal grains whose longer-axis diameter is not more than 200 nm or an amorphous silicon nitride powder is used as material powder. According to the disclosed method, the silicon nitride powder is sintered at a temperature of 1200.degree. C. to 1400.degree. C. or sintered with a product of sintering temperature (.degree. C.) and sintering time (sec) below 600000 (.degree. C. sec) at a temperature of 1400.degree. C. to 1900.degree. C. By this method, a silicon nitride based sintered body in which the longer-axis diameter of silicon nitride and/or sialon crystals is not more than 200 nm is obtained.

    摘要翻译： 本文提供了仅由均匀的细晶粒组成的I型氮化硅基烧结体，并且在中低温范围内提高了强度和断裂韧性。 由此制造的结晶氮化硅粉末由长轴直径不大于200nm的晶粒或非晶氮化硅粉末用作材料粉末构成。 根据所公开的方法，氮化硅粉末在1200℃至1400℃的温度下烧结，或烧结温度（℃）和烧结时间（秒）低于600000℃的产物烧结。 秒），在1400℃〜1900℃的温度下，得到氮化硅和/或赛隆晶体的长轴径不大于200nm的氮化硅系烧结体。

    Hydrogen-containing carbon film
    7.
    发明申请
    Hydrogen-containing carbon film 审中-公开
    含氢碳膜

    公开(公告)号：US20090159840A1

    公开(公告)日：2009-06-25

    申请号：US11658672

    申请日：2005-04-28

    申请人： Kazuhiko Oda ,  Takashi Matsuura ,  Toshihiko Ushiro

    发明人： Kazuhiko Oda ,  Takashi Matsuura ,  Toshihiko Ushiro

    IPC分类号： C09K3/00

    CPC分类号： G02B5/1866 ,  B01D53/228 ,  B01D67/002 ,  B01D67/0072 ,  B01D69/141 ,  B01D71/021 ,  B01D2323/34 ,  C01B32/05 ,  C23C14/0605 ,  C23C16/26

    摘要： To provide a hydrogen-containing carbonaceous membrane having a novel property. For example, the hydrogen-containing carbonaceous membrane may be effectively prevented from delamination from a substrate.A hydrogen-containing carbonaceous membrane includes carbon and hydrogen. The membrane has a hydrogen content of more than 50 atomic percent and less than 65 atomic percent and a density of more than 1.3 g/cm3 and less than 1.5 g/cm3. Another hydrogen-containing carbonaceous membrane has a hydrogen content of more than 0 atomic percent and less than 50 atomic percent and a density of more than 1.4 g/cm3 and less than 1.9 g/cm3.

    摘要翻译： 提供具有新特性的含氢碳质膜。 例如，可以有效地防止含氢碳质膜与基板分层。 含氢碳膜包括碳和氢。 该膜的氢含量大于50原子％且小于65原子％，密度大于1.3克/厘米3，小于1.5克/厘米3。 另一种含氢碳质膜的氢含量大于0原子％且小于50原子％，密度大于1.4g / cm 3且小于1.9g / cm 3。

    Hologram color filter, method for fabricating the same, and color liquid crystal display comprising it
    8.
    发明授权
    Hologram color filter, method for fabricating the same, and color liquid crystal display comprising it 失效
    全息彩色滤光片及其制造方法和包括它的彩色液晶显示器

    公开(公告)号：US07511784B2

    公开(公告)日：2009-03-31

    申请号：US10593248

    申请日：2005-03-11

    申请人： Toshihiko Ushiro ,  Kazuhiko Oda ,  Soichiro Okubo ,  Takashi Matsuura

    发明人： Toshihiko Ushiro ,  Kazuhiko Oda ,  Soichiro Okubo ,  Takashi Matsuura

    IPC分类号： G02B6/12 ,  G02B5/32 ,  G03H1/04

    CPC分类号： G02B1/02 ,  G02B5/203 ,  G02F1/133516

    摘要： A hologram color filter diffraction-separates an incident lightwave using a hologram to project thus separated lightwaves having different-wavelengths at intended positions with a specified spatial period. The hologram color filter comprises a light-transmitting substrate (21) and a light-transmitting diamond-like-carbon (DLC) film (22) formed on the substrate. In the DLC film, a relatively-low-refractive-index belt-shaped region (n1, 22a) and a relatively-high-refractive-index belt-shaped region (n2, 22b) are placed alternately.

    摘要翻译： 全息彩色滤光片衍射 - 使用全息图分离入射光波，以在具有特定空间周期的预期位置投射具有不同波长的分离的光波。 全息彩色滤光片包括形成在基片上的透光基片（21）和透光金刚石碳（DLC）薄膜（22）。 在DLC膜中，相对低折射率的带状区域（n1，22a）和相对高折射率的带状区域（n2，22b）交替放置。

    Optical Information Recording Medium, and Recording Method and Manufacturing Method Thereof
    9.
    发明申请
    Optical Information Recording Medium, and Recording Method and Manufacturing Method Thereof 审中-公开
    光信息记录介质及其记录方法及其制造方法

    公开(公告)号：US20090010135A1

    公开(公告)日：2009-01-08

    申请号：US11658584

    申请日：2005-06-06

    申请人： Toshihiko Ushiro ,  Kazuhiko Oda ,  Takashi Matsuura

    发明人： Toshihiko Ushiro ,  Kazuhiko Oda ,  Takashi Matsuura

    IPC分类号： G11B7/00

    CPC分类号： G11B7/26 ,  G03H1/02 ,  G03H1/0408 ,  G03H1/182 ,  G03H2001/0268 ,  G03H2001/2615 ,  G03H2240/54 ,  G11B7/24044

    摘要： To provide an optical information-recording medium that can easily record information at high density and has excellent durability at low cost.The optical information-recording medium includes a diamond-like carbon (DLC) layer (2) deposited on a substrate (1), in which information is recorded on the optical information-recording medium by irradiating recording spot regions selected from a plurality of recording spot regions with an energy beam (5) to increase the refractive index of the DLC layer (2) in the irradiated recording spot regions.

    摘要翻译： 提供能够容易地以高密度记录信息并且以低成本具有优异的耐久性的光学信息记录介质。 光信息记录介质包括沉积在基板（1）上的类金刚石碳（DLC）层（2），其中通过照射从多个记录中选出的记录点区域将信息记录在光信息记录介质上 具有能量束（5）的点区域，以增加照射的记录点区域中DLC层（2）的折射率。