摘要:
A phenolic resin foamed plate having a thickness of 50 mm or more, in which when the phenolic resin foamed plate is sliced from one main surface of the phenolic resin foamed plate along the main surface in a thickness direction at 5 mm intervals to produce n pieces, which are designated as Q1 to Qn in order from the main surface side, where average densities of Q1 to Qn are dq1 to dqn, respectively, the ratio (dqmin/dqave) of a minimum value dqmin of dq2 to dq(n-1) to an average value dqave of dq2 to dq(n-1) is 0.91≦dqmin/dqave≦0.98, and when a density distribution line is obtained, there exists a straight line parallel with the axis of abscissas that intersects the density distribution line at four points. The phenolic resin foamed plate exhibiting practically sufficient compressive strength and thermal conductivity even when the product thickness is increased.
摘要:
A method of evaluating a color filter including a substrate, and at least three color pixels disposed thereon, the method includes determining an oblique visibility of a liquid crystal display device equipped with the color filter on the basis of value ξ1 obtained from the equation (1): ξ1=∫abΔ(λ)·T(λ)dλ (1) wherein “a” and “b” are values respectively representing a wavelength range of a continuous wavelength light and satisfying conditions of 380≦a, b≦780 and a
摘要:
A paint film-protecting sheet includes a pressure-sensitive adhesive layer on a support substrate. The pressure-sensitive adhesive layer is comprised of a non-crosslinked pressure-sensitive adhesive, which has a weight-average molecular weight of 65×104˜120×104 and a number average molecular weight of 10×104˜25×104. With a paint film-protecting sheet having such a composition, adhesive residue on a paint film can be better prevented.
摘要:
A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each other. In the first oxide film, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. The thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C become 1.5 times of a sectional area of the region B, while a film thickness of the region B is maintained.
摘要:
A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each other. In the first oxide film, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. The thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C become 1.5 times of a sectional area of the region B, while a film thickness of the region B is maintained.
摘要:
A method of evaluating a color filter including a substrate, and at least three color pixels disposed thereon, the method includes determining an oblique visibility of a liquid crystal display device equipped with the color filter on the basis of value ξ1 obtained from the equation (1): ξ1=∫abΔ(λ)·T(λ)dλ (1) wherein “a” and “b” are values respectively representing a wavelength range of a continuous wavelength light and satisfying conditions of 380≦a, b≦780 and a
摘要:
A substrate of the surface protective film giving a film attached to the surface of a building material, a painted steel sheet, etc. for the purpose of prevention of damage easy applicability and easy removability and a surface protective film using the same, that is, a substrate of the surface protective film comprised of at least two film layers with different physical properties, wherein an outermost film layer forming an outermost surface corresponding to another surface facing one surface of the substrate exhibits a tensile modulus of elasticity based on JIS-K-7127 (2000) lower than a tensile modulus of elasticity of the substrate as a whole and a surface protective film comprised of such a substrate of the surface protective film on one surface of which an adhesive layer is formed.
摘要:
A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each other. In the first oxide film, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. The thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C become 1.5 times of a sectional area of the region B, while a film thickness of the region B is maintained.