PHENOLIC RESIN FOAMED PLATE AND METHOD FOR PRODUCING SAME
    1.
    发明申请
    PHENOLIC RESIN FOAMED PLATE AND METHOD FOR PRODUCING SAME 审中-公开
    酚醛树脂泡沫板及其生产方法

    公开(公告)号:US20120270026A1

    公开(公告)日:2012-10-25

    申请号:US13516523

    申请日:2010-12-15

    IPC分类号: B32B27/42 B29C44/06 B32B5/18

    摘要: A phenolic resin foamed plate having a thickness of 50 mm or more, in which when the phenolic resin foamed plate is sliced from one main surface of the phenolic resin foamed plate along the main surface in a thickness direction at 5 mm intervals to produce n pieces, which are designated as Q1 to Qn in order from the main surface side, where average densities of Q1 to Qn are dq1 to dqn, respectively, the ratio (dqmin/dqave) of a minimum value dqmin of dq2 to dq(n-1) to an average value dqave of dq2 to dq(n-1) is 0.91≦dqmin/dqave≦0.98, and when a density distribution line is obtained, there exists a straight line parallel with the axis of abscissas that intersects the density distribution line at four points. The phenolic resin foamed plate exhibiting practically sufficient compressive strength and thermal conductivity even when the product thickness is increased.

    摘要翻译: 一种厚度为50mm以上的酚醛树脂发泡板,其中当酚醛树脂发泡板沿酚醛树脂发泡板的主表面沿厚度方向以5mm间隔从主表面切片以产生n个片 ,其中从主面侧开始按照Q1〜Qn的平均密度dq1〜dqn分别指定为Q1〜Qn,dq2的最小值dqmin与dq(n-1)的比(dqmin / dqave) )至dq2至dq(n-1)的平均值dqave为0.91≦̸ dqmin / dqave≦̸ 0.98,并且当获得密度分布线时,存在与横坐标轴平行的直线与密度分布相交 在四点。 即使产品厚度增加,酚醛树脂发泡板也具有足够的抗压强度和导热性。

    Method of producing a semiconductor device having an oxide film

    公开(公告)号:US20060079078A1

    公开(公告)日:2006-04-13

    申请号:US11237688

    申请日:2005-09-29

    摘要: A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each other. In the first oxide film, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. The thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C become 1.5 times of a sectional area of the region B, while a film thickness of the region B is maintained.

    Method of producing a semiconductor device having an oxide film
    5.
    发明授权
    Method of producing a semiconductor device having an oxide film 失效
    制造具有氧化膜的半导体器件的方法

    公开(公告)号:US07598140B2

    公开(公告)日:2009-10-06

    申请号:US11237688

    申请日:2005-09-29

    IPC分类号: H01L21/336

    摘要: A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each other. In the first oxide film, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. The thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C become 1.5 times of a sectional area of the region B, while a film thickness of the region B is maintained.

    摘要翻译: 提供具有优异特性的半导体器件,而不会劣化膜质量。 第一氧化物膜被分成三个区域A,B和C.在硅衬底的平面方向上的区域A,B和C的长度I,II和III设定为彼此相等。 在第一氧化物膜中,进行热处理使得区域A和区域C的膜厚度增加。 调整热处理时间,热处理温度等参数,使得区域A和区域C的截面积成为区域B的截面面积的1.5倍,同时保持区域B的膜厚度。

    Substrate of the surface protective film and surface protective film
    7.
    发明申请
    Substrate of the surface protective film and surface protective film 审中-公开
    表面保护膜和表面保护膜的基材

    公开(公告)号:US20070134475A1

    公开(公告)日:2007-06-14

    申请号:US11634938

    申请日:2006-12-07

    IPC分类号: B32B27/08 B32B27/32

    摘要: A substrate of the surface protective film giving a film attached to the surface of a building material, a painted steel sheet, etc. for the purpose of prevention of damage easy applicability and easy removability and a surface protective film using the same, that is, a substrate of the surface protective film comprised of at least two film layers with different physical properties, wherein an outermost film layer forming an outermost surface corresponding to another surface facing one surface of the substrate exhibits a tensile modulus of elasticity based on JIS-K-7127 (2000) lower than a tensile modulus of elasticity of the substrate as a whole and a surface protective film comprised of such a substrate of the surface protective film on one surface of which an adhesive layer is formed.

    摘要翻译: 表面保护膜的基材,其为了防止损坏容易适用性和易于除去性以及使用其的表面保护膜,提供附着在建筑材料表面上的膜,涂漆钢板等, 表面保护膜的基材由至少两层具有不同物理性质的膜层构成,其中形成与衬底相对的另一表面的最外表面的最外膜层基于JIS-K- 7127(2000)低于基板整体的拉伸弹性模量和表面保护膜,该表面保护膜由表面保护膜的一个表面上形成有粘合剂层的基板构成。

    Semiconductor device having a gate electrode formed on a gate oxide film
    8.
    发明授权
    Semiconductor device having a gate electrode formed on a gate oxide film 失效
    具有形成在栅氧化膜上的栅电极的半导体器件

    公开(公告)号:US06979858B2

    公开(公告)日:2005-12-27

    申请号:US10336737

    申请日:2003-01-06

    摘要: A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each other. In the first oxide film, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. The thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C become 1.5 times of a sectional area of the region B, while a film thickness of the region B is maintained.

    摘要翻译: 提供具有优异特性的半导体器件,而不会劣化膜质量。 第一氧化物膜被分成三个区域A,B和C.在硅衬底的平面方向上的区域A,B和C的长度I,II和III设定为彼此相等。 在第一氧化物膜中,进行热处理使得区域A和区域C的膜厚度增加。 调整热处理时间,热处理温度等参数,使得区域A和区域C的截面积成为区域B的截面面积的1.5倍,同时保持区域B的膜厚度。