Composition and process for ultra-fine pattern formation
    1.
    发明授权
    Composition and process for ultra-fine pattern formation 失效
    超细图案形成的组成和工艺

    公开(公告)号:US4401745A

    公开(公告)日:1983-08-30

    申请号:US296358

    申请日:1981-08-26

    摘要: A composition for ultra-fine pattern formation comprising at least one of acrylic and/or vinyl ketone polymers as the major component and an effective amount of an aromatic azide compound and, in another embodiment, further comprising an effective amount of an organic compound having a vinyl group, and a process for ultra-fine pattern formation therewith. In the process, a required area of a film formed from the composition is irradiated with a corpuscular beam or with electromagnetic wave radiation. The aromatic azide compound or a mixture thereof with the aromatic compound having a vinyl group only in the unexposed areas is subjected to a deactivation treatment within the film, and the unexposed areas of the film are removed with a gas plasma to form an ultra-fine pattern. The composition is suitable for use in the ultra-fine pattern formation of a resist for transistors, integrated circuits (IC), large scale integrated circuits (LSI) or the like in the semiconductor industry.

    摘要翻译: 一种用于超细图案形成的组合物,其包含丙烯酸和/或乙烯基酮聚合物作为主要组分中的至少一种和有效量的芳族叠氮化合物,并且在另一个实施方案中,还包含有效量的具有 乙烯基,以及与其形成超微细图案的方法。 在该过程中,由组合物形成的膜的所需面积被照射了粒子束或电磁波辐射。 芳族叠氮化合物或其与仅在未曝光区域中具有乙烯基的芳族化合物的混合物在膜内进行钝化处理,并且用气体等离子体除去膜的未曝光区域以形成超细 模式。 该组合物适合用于半导体工业中的晶体管,集成电路(IC),大型集成电路(LSI)等的抗蚀剂的超微细图案形成。

    Method for fine pattern formation on a photoresist
    2.
    发明授权
    Method for fine pattern formation on a photoresist 失效
    在光致抗蚀剂上精细图案形成的方法

    公开(公告)号:US4590149A

    公开(公告)日:1986-05-20

    申请号:US672763

    申请日:1984-11-19

    CPC分类号: G03F7/36 Y10S430/168

    摘要: A method for high-fidelity fine patterning of a photoresist layer involving a dry-process development by exposure to a plasma gas. Following irradiation in a pattern with actinic rays, a photoresist layer coated on a substrate is heated in an atmosphere at 200.degree. to 500.degree. C. Subsequent exposure of the photoresist layer to a plasma gas gives a finely patterned resist layer with a very high residual film ratio or very small decrease in the film thickness.

    摘要翻译: 涉及通过暴露于等离子体气体的干法显影的光致抗蚀剂层的高保真精细图案化的方法。 在用光化射线照射之后,涂覆在基片上的光致抗蚀剂层在200℃至500℃的气氛中加热。随后将光致抗蚀剂层暴露于等离子体气体,得到精细图案化的抗蚀剂层,具有非常高的残留 膜比或膜厚度的非常小的降低。

    Photo--imaging a polymethyl isopropenyl ketone (PMIPK) composition
    4.
    发明授权
    Photo--imaging a polymethyl isopropenyl ketone (PMIPK) composition 失效
    成像聚甲基异丙烯基酮(PMIPK)组合物

    公开(公告)号:US4276369A

    公开(公告)日:1981-06-30

    申请号:US957836

    申请日:1978-11-06

    摘要: The present invention relates to a method for forming ultra fine patterns on films of polymethyl isopropenyl ketone or a mixture of polymethyl isopropenyl ketone and a benzophenone compound by exposing such films to ultra violet rays in the range of from 1,000 to 3,500 A. The present invention is particularly useful for providing semiconductors having ultra fine patterns and ultra LSI's. The electric or electronic circuits for electronic or electric apparatus and equipment have been produced by wiring resistors, condensers, coils, vacuum tubes and the like necessary components. However, because of various disadvantages such as assembly requiring much time, complication of work, necessity of using large equipment, reasons or causes for errors, limitation of productivity, impossibility of reducing price or cost and the like, the present invention has been developed for printed circuit boards. However, in the present invention, such active devices as vacuum tubes, resistors, condensors, coils and the like must be fixed on printed circuit boards which have been previously finished. Therefore, although this invention has brought reduction, to some extent, in the time required for the work, complication of work, and the work capacity (scale), it can not yet be said that it has made the work miniaturized or economical. Under such circumstances, through the invention of diodes and transistors by solidification of rectification and amplifying functions in the form of germanium or silicone semiconductors, it has become possible to make the work extremely miniaturized.

    摘要翻译: 本发明涉及通过将这种膜暴露于1000-3,500范围内的紫外线来形成聚甲基异丙烯基酮或聚甲基异丙烯基酮和二苯甲酮化合物的混合物的超细图案的方法。本发明 对于提供具有超细图案和超LSI的半导体特别有用。 用于电子或电气设备和设备的电气或电子电路已经通过布线电阻器,电容器,线圈,真空管等必要部件生产。 然而,由于诸如组装需要很多时间,工作的复杂性,使用大型设备的必要性,错误的原因或原因,生产率的限制,不可能降低价格或成本等各种缺点,本发明已经被开发用于 印刷电路板。 然而,在本发明中,诸如真空管,电阻器,冷凝器,线圈等的有源器件必须固定在预先完成的印刷电路板上。 因此,虽然本发明在一定程度上减少了工作所需的时间,工作的复杂程度和工作能力(规模),但还不能说是使工作小型化和经济化。 在这种情况下,通过使锗或硅树脂半导体形式的整流和放大功能的固化,二极管和晶体管的发明,可以使工作极其小型化。

    Light sensitive compositions of polymethyl isopropenyl ketone
    5.
    发明授权
    Light sensitive compositions of polymethyl isopropenyl ketone 失效
    聚甲基异丙烯基酮的光敏组合物

    公开(公告)号:US4297433A

    公开(公告)日:1981-10-27

    申请号:US961120

    申请日:1978-11-16

    摘要: The present invention relates to a method for forming ultra fine patterns on films of polymethyl isopropenyl ketone or a mixture of polymethyl isopropenyl ketone and a benzophenone compound by exposing such films to ultra violet rays in the range of from 1,000 to 3,500 A. The present invention is particularly useful for providing semiconductors having ultra fine patterns and ultra LSI's. The electric or electronic circuits for electronic or electric apparatus and equipment have been produced by wiring resistors, condensers, coils, vacuum tubes and the like necessary components. However, because of various disadvantages such as assembly requiring much time, complication of work, necessity of using large equipment, reasons or causes for errors, limitation of productivity, impossibility of reducing price or cost and the like, the present invention has been developed for printed circuit boards. However, in the present invention, such active devices as vacuum tubes, resistors, condensers, coils and the like must be fixed on printed circuit boards which have been previously finished. Therefore, although this invention has brought reduction, to some extent, in the time required for the work, complication of work, and the work capacity (scale), it can not yet be said that it has made the work miniaturized or economical. Under such circumstances, through the invention of diodes and transistors by solidification of rectification and amplifying functions in the form of germanium or silicone semiconductors, if has become possible to make the work extremely miniaturized.

    摘要翻译: 本发明涉及通过将这种膜暴露于1000-3,500范围内的紫外线来形成聚甲基异丙烯基酮或聚甲基异丙烯基酮和二苯甲酮化合物的混合物的超细图案的方法。本发明 对于提供具有超细图案和超LSI的半导体特别有用。 用于电子或电气设备和设备的电气或电子电路已经通过布线电阻器,电容器,线圈,真空管等必要部件生产。 然而,由于诸如组装需要很多时间,工作的复杂性,使用大型设备的必要性,错误的原因或原因,生产率的限制,不可能降低价格或成本等各种缺点,本发明已经被开发用于 印刷电路板。 然而,在本发明中,诸如真空管,电阻器,电容器,线圈等的有源器件必须固定在预先完成的印刷电路板上。 因此,虽然本发明在一定程度上减少了工作所需的时间,工作的复杂程度和工作能力(规模),但还不能说是使工作小型化和经济化。 在这种情况下,通过固化锗或硅树脂半导体形式的整流和放大功能,通过二极管和晶体管的发明,如果可以使工作极其小型化。