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公开(公告)号：US10340117B2
公开(公告)日：2019-07-02
申请号：US15514656
申请日：2014-09-29
申请人： HITACHI, LTD.
摘要： Since a diffraction phenomenon occurs in the electron beam passing through a differential evacuation hole, an electron beam whose probe diameter is narrowed cannot pass through a hole having an aspect ratio of a predetermined value or more, and accordingly, a degree in vacuum on the electron beam side cannot be improved. By providing a differential evacuation hole with a high aspect ratio in an ion beam device, it becomes possible to obtain an observed image on a sample surface, with the sample being placed under the atmospheric pressure or a pressure similar thereto, in a state where the degree of vacuum on the ion beam side is stabilized. Moreover, by processing the differential evacuation hole by using an ion beam each time it is applied, both a normal image observation with high resolution and an image observation under atmospheric pressure or a pressure similar thereto can be carried out.
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公开(公告)号：US10546721B2
公开(公告)日：2020-01-28
申请号：US15914513
申请日：2018-03-07
申请人： Hitachi, Ltd.
发明人： Keiji Watanabe , Hiroyasu Shichi , Daisuke Ryuzaki
IPC分类号： H01J37/317 , H01J37/04 , H01J37/30
摘要： The present invention provides a technology for avoiding radiation of an ion beam at a position other than a desired processing position. A microstructure manufacturing method includes a step of radiating an ion beam to a sample; a step of supplying a gas to the sample; a step of stopping supplying the gas to the sample; and a step of stopping radiating the ion beam to the sample. The step of radiating the ion beam is performed earlier than the step of supplying the gas or the step of stopping supplying the gas is performed earlier than the step of stopping radiating the ion beam.
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公开(公告)号：US10662059B2
公开(公告)日：2020-05-26
申请号：US16015640
申请日：2018-06-22
申请人： HITACHI, LTD.
IPC分类号： B81C99/00 , H01J37/317 , H01J37/304 , H01J37/147 , G03F7/20 , B81C1/00 , H01J37/305
摘要： The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view.The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.
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公开(公告)号：US20180244517A1
公开(公告)日：2018-08-30
申请号：US15932194
申请日：2018-02-16
申请人： Hitachi, Ltd.
发明人： Hiroyasu Shichi , Keiji Watanabe , Daisuke Ryuzaki
IPC分类号： B81C1/00 , H01J27/02 , H01L21/687
CPC分类号： B81C1/00341 , B81C1/00626 , B81C2201/0132 , H01J27/022 , H01J37/3005 , H01J37/3056 , H01J2237/31749 , H01L21/68714
摘要： A sufficient processing speed and sufficient processing accuracy are obtained in a microstructure manufacturing method using ion beams. The microstructure manufacturing method includes the steps of: (a) irradiating a first region of a sample with a first ion beam (projection ion beam) formed by being passed through a first opening portion of a first mask, and etching the sample; and (b) irradiating a second region that is wider than the first region in a direction along a beam width, with a second ion beam (projection ion beam), and processing the sample. Furthermore, a magnitude of a skirt width of a longitudinal section of the second ion beam is smaller than a magnitude of a skirt width of a longitudinal section of the first ion beam.
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公开(公告)号：US10549989B2
公开(公告)日：2020-02-04
申请号：US15932194
申请日：2018-02-16
申请人： Hitachi, Ltd.
发明人： Hiroyasu Shichi , Keiji Watanabe , Daisuke Ryuzaki
IPC分类号： B81C1/00 , H01L21/687 , H01J27/02 , H01J37/305 , H01J37/30
摘要： A sufficient processing speed and sufficient processing accuracy are obtained in a microstructure manufacturing method using ion beams. The microstructure manufacturing method includes the steps of: (a) irradiating a first region of a sample with a first ion beam (projection ion beam) formed by being passed through a first opening portion of a first mask, and etching the sample; and (b) irradiating a second region that is wider than the first region in a direction along a beam width, with a second ion beam (projection ion beam), and processing the sample. Furthermore, a magnitude of a skirt width of a longitudinal section of the second ion beam is smaller than a magnitude of a skirt width of a longitudinal section of the first ion beam.
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公开(公告)号：US10304657B2
公开(公告)日：2019-05-28
申请号：US15548531
申请日：2015-02-09
申请人： Hitachi, Ltd.
摘要： A device including an imaging-type or a projection-type ion detection system and being capable of performing observation or inspection at high speed with an ultrahigh resolution in a sample observation device using an ion beam is provided. The device includes a gas field ion source that generates an ion beam, an irradiation optical system that irradiates a sample with the ion beam, a potential controller that controls an accelerating voltage of the ion beam and a positive potential to be applied to the sample and an ion detection unit that images or projects ions reflected from the sample as a microscope image, in which the potential controller includes a storage unit storing a first positive potential allowing the ion beam to collide with the sample and a second positive potential for reflecting the ion beam before allowing the ion beam to collide with the sample.
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公开(公告)号：US10276341B2
公开(公告)日：2019-04-30
申请号：US15909601
申请日：2018-03-01
申请人： Hitachi, Ltd.
IPC分类号： H01J37/15 , H01J37/30 , H01J37/147 , H01J37/304 , H01J37/305 , H01J37/317
摘要： The present invention is directed to a technique for correcting processing positional deviation and processing size deviation during processing by a focused ion beam device. A focused ion beam device control method includes forming a first processed figure on the surface of a specimen through the application of a focused ion beam in a first processing range of vision; determining the position of a next, second processing range of vision based on the outer dimension of the first processed figure; and moving a stage to the position of the second processing range of vision thus determined. Further, the control method includes forming a second processed figure through the application of the focused ion beam in a second processing range of vision.
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