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公开(公告)号:US20230377837A1
公开(公告)日:2023-11-23
申请号:US18031359
申请日:2020-10-26
Applicant: Hitachi High-Tech Corporation
Inventor: Yohei NAKAMURA , Natsuki TSUNO , Yasuhiro SHIRASAKI , Minami SHOUJI , Shota MITSUGI , Yuko SASAKI
IPC: H01J37/26 , H01J37/244 , H01J37/22 , H01J37/28
CPC classification number: H01J37/265 , H01J37/244 , H01J37/226 , H01J37/28 , H01J2237/2448
Abstract: Charged particle beam apparatus includes: a charged particle optical system to irradiate a sample with a pulsed charged particle beam; an optical system to irradiate the sample with light; a detector configured to detect a secondary charged particle emitted by irradiating the sample with the pulsed charged particle beam; a control unit configured to control the charged particle optical system to irradiate the sample with the pulsed charged particle beam under a predetermined electron beam pulse condition, and control the optical system to irradiate the sample with the light under a predetermined light irradiation condition; and a computation device configured to set the predetermined light irradiation condition based on a difference between a secondary charged particle signal amount detected under a first electron beam pulse condition and a secondary charged particle signal amount detected under a second electron beam pulse condition different from the first electron beam pulse condition.
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公开(公告)号:US20230162943A1
公开(公告)日:2023-05-25
申请号:US17915034
申请日:2020-03-31
Applicant: Hitachi High-Tech Corporation
Inventor: U OH , Minoru YAMAZAKI , Yuko SASAKI
IPC: H01J37/22 , H01J37/28 , G01N23/2251 , G06F16/2455
CPC classification number: H01J37/222 , H01J37/28 , G01N23/2251 , G06F16/2455 , H01J2237/24564 , H01J2237/24521 , H01J2237/24578 , G01N2223/07 , G01N2223/418 , G01N2223/507 , G01N2223/6116
Abstract: The present invention provides a charged particle beam device with which optimal parameters for the device can be effectively derived in a short time period. This charged particle beam device comprises: an electron gun (1) that irradiates a sample (10) with an electron beam (2); an image processing unit (901) that acquires an image of the sample (10) from a signal (12) generated by the sample (10) due to the electron beam (2); a database (604) that holds correspondence between a first parameter that is an optical condition, a second parameter that is a value pertaining to device performance, and a third parameter that is information pertaining to the device configuration, and stores a plurality of analysis values and measurement values; and a learning machine (605) that searches the database (604) and derives a first parameter that satisfies a target value of the second parameter.
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公开(公告)号:US20250095956A1
公开(公告)日:2025-03-20
申请号:US18728002
申请日:2022-01-27
Applicant: Hitachi High-Tech Corporation
Inventor: Hang DU , Toshiyuki YOKOSUKA , Yuko SASAKI , Yasuko WATANABE , Megumi KIMURA
Abstract: Provided is a charged particle beam inspection system that can derive an optimal observation condition using an image prediction model obtained by machine learning of simulation results. The charged particle beam inspection system includes: a charged particle beam irradiation device configured to acquire an image of a sample; and an observation condition search device configured to search for an observation condition of the charged particle beam irradiation device and control image acquisition performed by the charged particle beam irradiation device. The observation condition search device acquires a module including a learning device subjected to training using labeled training data, which includes a plurality of simulation images obtained by inputting image generation condition including a plurality of first device conditions and a plurality of first sample conditions into a simulator and the first image generation condition, sets a plurality of second device conditions in an image generation tool to acquire a plurality of output images output by the image generation tool, collates the plurality of output images with an image obtained by inputting the first sample condition and the second device condition to the learning device, and generates a second sample condition based on the collation result.
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公开(公告)号:US20220252525A1
公开(公告)日:2022-08-11
申请号:US17594804
申请日:2019-05-15
Applicant: Hitachi High-Tech Corporation
Inventor: Taichi MAEDA , Yuko SASAKI
IPC: G01N21/95 , G01N23/2251 , G06T7/00
Abstract: The present invention addresses the problem of quickly specifying an optical condition of a wafer to be inspected, and in particular, accelerating optical condition setting after obtaining a customer wafer. An inspection apparatus automatic adjustment system according to the present invention comprises: an analysis condition setting interface 102 which inputs analysis conditions; an analysis execution unit 103 which performs analysis; an inspection device model and model DB 101 used for analysis; an analysis result DB 104 that stores analysis results; an observation condition setting interface 105 which inputs a wafer pattern, a focus point, an optimization index, and a priority; a wafer pattern search unit 106 which searches for a wafer pattern similar to the input wafer pattern; an optical condition extraction unit 107 which extracts, from the analysis result DB 104, the optimum optical condition for the similar wafer pattern and the focus point; and an optical condition setting unit 108 which generates a control signal corresponding to the optical condition and transmits the control signal to the inspection apparatus.
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公开(公告)号:US20220359149A1
公开(公告)日:2022-11-10
申请号:US17620970
申请日:2019-07-02
Applicant: Hitachi High-Tech Corporation
Inventor: Makoto SAKAKIBARA , Momoyo ENYAMA , Hajime KAWANO , Makoto SUZUKI , Kenji TANIMOTO , Yuko SASAKI
IPC: H01J37/14 , H01J37/28 , H01J37/26 , H01J37/02 , H01J37/244
Abstract: To provide a charged particle beam device including a booster electrode and an object lens that generates a magnetic field in a vicinity of a sample, and capable of preventing ion discharge, an insulator is disposed between a magnetic field lens and the booster electrode. A tip of the insulator protrudes to a tip side of an upper magnetic path from a tip of a lower magnetic path of the magnetic field lens. The tip on a lower side of the insulator is above the lower magnetic path, and a non-magnetic metal electrode is embedded between the upper magnetic path and the lower magnetic path.
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