公开(公告)号：US20150299842A1

公开(公告)日：2015-10-22

申请号：US14376860

申请日：2013-02-01

Applicant: Hitachi High-Technologies Corporation

Inventor： Yoichiro Hashimoto ,  Eiko Nakazawa ,  Mami Konomi ,  Shuichi Takeuchi

IPC: C23C14/22

CPC classification number: C23C14/221 ,  H01J37/3178 ,  H01J2237/31732 ,  H01J2237/31735

Abstract: An object of the present invention is to provide: a wiring method in which wiring is performed in a vacuum chamber of a charged particle device without using gas deposition or the like; and a charged particle device.In order to achieve the above-described object, the present invention proposes: a wiring method in which a wiring line composed of an ionic liquid is formed by dropping an ionic liquid on a sample or preparing an ionic liquid on a sample table, on which a sample is placed in advance, and irradiating a wiring track between a wiring start point and a wiring end point with a charged particle beam; and a charged particle device. According to this configuration, wiring can be performed in a vacuum chamber of a charged particle device without using a gas deposition method or the like.

Abstract translation: 本发明的目的是提供一种布线方法，其中，在不使用气体沉积等的情况下，在带电粒子装置的真空室中进行布线; 和带电粒子装置。 为了实现上述目的，本发明提出：一种布线方法，其中通过将离子液体滴落在样品上或在样品台上制备离子液体形成由离子液体组成的布线，在该布线方法上， 预先放置样品，并用带电粒子束照射布线起点和布线终点之间的布线轨迹; 和带电粒子装置。 根据该结构，可以在不使用气相沉积法等的带电粒子装置的真空室中进行配线。

公开(公告)号：US10192710B2

公开(公告)日：2019-01-29

申请号：US15574873

申请日：2015-05-25

Applicant: Hitachi High-Technologies Corporation

Inventor： Yuki Tani ,  Hisayuki Takasu ,  Shuichi Takeuchi

IPC: H01J37/305 ,  H01J37/08 ,  H01J27/04 ,  H01J37/30 ,  H01J37/24 ,  H01J37/302

Abstract: An object of the present invention is to provide an ion milling apparatus capable of processing deposits attached to an ion gun and an ion milling method capable of processing deposits attached to an ion gun. The ion milling apparatus includes gas injection means for injecting a gas toward the ion gun, and the gas injection means included in the ion milling apparatus moves the deposits attached to the ion gun by injecting the gas toward the inside of the ion gun.

公开(公告)号：US20180216223A1

公开(公告)日：2018-08-02

申请号：US15939689

申请日：2018-03-29

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoichiro Hashimoto ,  Eiko Nakazawa ,  Mami Konomi ,  Shuichi Takeuchi

IPC: C23C14/22 ,  H01J37/317

CPC classification number: C23C14/221 ,  H01J37/3178 ,  H01J2237/31732 ,  H01J2237/31735

Abstract: An object of the present invention is to provide: a wiring method in which wiring is performed in a vacuum chamber of a charged particle device without using gas deposition or the like; and a charged particle device.In order to achieve the above-described object, the present invention proposes: a wiring method in which a wiring line composed of an ionic liquid is formed by dropping an ionic liquid on a sample or preparing an ionic liquid on a sample table, on which a sample is placed in advance, and irradiating a wiring track between a wiring start point and a wiring end point with a charged particle beam; and a charged particle device. According to this configuration, wiring can be performed in a vacuum chamber of a charged particle device without using a gas deposition method or the like.

公开(公告)号：US09963776B2

公开(公告)日：2018-05-08

申请号：US14376860

申请日：2013-02-01

Applicant: Hitachi High-Technologies Corporation

Inventor： Yoichiro Hashimoto ,  Eiko Nakazawa ,  Mami Konomi ,  Shuichi Takeuchi

IPC: C23C14/22 ,  H01J37/317

CPC classification number: C23C14/221 ,  H01J37/3178 ,  H01J2237/31732 ,  H01J2237/31735

Abstract: An object of the present invention is to provide: a wiring method in which wiring is performed in a vacuum chamber of a charged particle device without using gas deposition or the like; and a charged particle device.In order to achieve the above-described object, the present invention proposes: a wiring method in which a wiring line composed of an ionic liquid is formed by dropping an ionic liquid on a sample or preparing an ionic liquid on a sample table, on which a sample is placed in advance, and irradiating a wiring track between a wiring start point and a wiring end point with a charged particle beam; and a charged particle device. According to this configuration, wiring can be performed in a vacuum chamber of a charged particle device without using a gas deposition method or the like.