公开(公告)号：US10361065B2

公开(公告)日：2019-07-23

申请号：US15760994

申请日：2015-09-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kengo Asai ,  Toru Iwaya ,  Hisayuki Takasu ,  Hiroyasu Shichi

IPC: H01J37/31 ,  H01J37/28 ,  H01J37/20 ,  H01J37/09 ,  H01J37/08 ,  H01J37/305

Abstract: To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gun 100 that includes a permanent magnet 114 and that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shield 172 for reducing a leakage magnetic field from the permanent magnet 114 to the electron microscope column is provided.

公开(公告)号：US10515777B2

公开(公告)日：2019-12-24

申请号：US14901506

申请日：2014-07-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Atsushi Kamino ,  Hisayuki Takasu ,  Hirobumi Muto

IPC: H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J37/20 ,  H01J37/305

Abstract: This ion milling device is provided with a vacuum chamber (105), an exhaust device (101) for evacuating the interior of the vacuum chamber, a sample stage (103) for supporting a sample (102) to be irradiated inside the vacuum chamber, a heater (107) for heating the interior of the vacuum chamber, a gas source (106) for introducing into the vacuum chamber a gas serving as a heating medium, and a controller (110) for controlling the gas source, the controller controlling the gas source so that the vacuum chamber internal pressure is in a predetermined state during heating by the heater. This enables the control in a short time of the temperature for suppressing condensation, or the like, occurring at atmospheric release after cooling and ion milling a sample.

公开(公告)号：US10304653B2

公开(公告)日：2019-05-28

申请号：US15500449

申请日：2015-07-29

Applicant: Hitachi High-Technologies Corporation

Inventor： Kengo Asai ,  Hiroyasu Shichi ,  Hisayuki Takasu ,  Toru Iwaya

IPC: H01J37/08 ,  H01J37/30 ,  H01J37/305 ,  H01J27/04

Abstract: To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method.An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m3 to 191 kJ/m3.

公开(公告)号：US09499900B2

公开(公告)日：2016-11-22

申请号：US14379805

申请日：2013-02-18

Applicant: Hitachi High-Technologies Corporation

Inventor： Atsushi Kamino ,  Hisayuki Takasu ,  Hirobumi Muto ,  Toru Iwaya

IPC: C23C14/30 ,  G01N1/32 ,  H01J37/305 ,  H01J37/20 ,  H01J37/30

CPC classification number: C23C14/30 ,  G01N1/32 ,  H01J37/20 ,  H01J37/30 ,  H01J37/3053 ,  H01J37/3056 ,  H01J2237/317 ,  H01J2237/31745 ,  H01J2237/31749 ,  H01J2237/334

Abstract: The present invention advantageously provides an ion milling device that can set a high-precision processing area with a simple structure. The ion milling device includes a sample holder that holds a sample and a mask partially restricting irradiation of the sample with an ion beam. The sample holder includes a first contact surface that contacts an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface.

Abstract translation: 本发明有利地提供了一种能够以简单结构设置高精度加工区域的离子铣削装置。 离子研磨装置包括保持样品的保持器和用离子束部分地限制样品的照射的掩模。 样品保持器包括接触位于离子束的通过轨道侧的样品的端面的第一接触表面和接触掩模的端面的第二接触表面，使得掩模位于间隔开的位置 离子束除了第一接触表面以外。

公开(公告)号：US20150008121A1

公开(公告)日：2015-01-08

申请号：US14379805

申请日：2013-02-18

Applicant: Hitachi High-Technologies Corporation

Inventor： Atsushi Kamino ,  Hisayuki Takasu ,  Hirobumi Muto ,  Toru Iwaya

IPC: C23C14/30 ,  H01J37/305

CPC classification number: C23C14/30 ,  G01N1/32 ,  H01J37/20 ,  H01J37/30 ,  H01J37/3053 ,  H01J37/3056 ,  H01J2237/317 ,  H01J2237/31745 ,  H01J2237/31749 ,  H01J2237/334

Abstract: The present invention aims at providing an ion milling device that can set a high-precision processing area with a simple structure. In order to achieve the above object, there is proposed an ion milling device including a sample holder that holds a sample and a mask partially restricting irradiation of the sample with an ion beam, in which the sample holder includes a first contact surface that contacts with an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts with an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface.

Abstract translation: 本发明旨在提供一种能够以简单的结构设置高精度加工区域的离子铣削装置。 为了实现上述目的，提出了一种离子铣削装置，其包括保持样品的样品保持器和部分地限制用离子束照射样品的掩模，其中样品保持器包括与第一接触表面接触的第一接触表面 所述样品的端面位于所述离子束的通过轨道侧，以及与所述掩模的端面接触的第二接触表面，使得所述掩模位于比所述离子束更远离所述离子束的位置 接触面。

公开(公告)号：US20140353151A1

公开(公告)日：2014-12-04

申请号：US14370763

申请日：2012-12-25

Applicant: Hitachi High-Technologies Corporation

Inventor： Asako Kaneko ,  Hisayuki Takasu ,  Hirobumi Mutou

IPC: H01J37/305 ,  H01J37/16 ,  H01J37/20 ,  H01J37/18

CPC classification number: H01J37/3053 ,  C23C8/40 ,  C23C14/505 ,  C23C16/4586 ,  H01J37/16 ,  H01J37/18 ,  H01J37/20 ,  H01J2237/002 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01J2237/28 ,  H01J2237/3151 ,  H01J2237/31749

Abstract: The purpose of the present invention is to provide a charged particle beam irradiation apparatus of a relatively simple structure which performs cooling on a sample or a sample stage. An aspect of the present invention comprises: a charged particle source; a sample stage; and a driving mechanism that comprises a transmission mechanism which transmits a driving force to move the sample stage. The charged particle beam irradiation apparatus comprises a container capable of accommodating an ionic liquid (12), wherein the container is disposed in a vacuum chamber. When the ionic liquid (12) is accommodated in the container, at least a portion of the transmission mechanism is provided at a position submerged in the ionic liquid (12).

Abstract translation: 本发明的目的是提供一种对样品或样品台进行冷却的相对简单结构的带电粒子束照射装置。 本发明的一个方面包括：带电粒子源; 样品台 以及包括传递驱动力以移动样品台的传动机构的驱动机构。 带电粒子束照射装置包括能够容纳离子液体（12）的容器，其中容器设置在真空室中。 当离子液体（12）容纳在容器中时，传播机构的至少一部分设置在浸没在离子液体（12）中的位置处。

公开(公告)号：US10832889B2

公开(公告)日：2020-11-10

申请号：US16320525

申请日：2016-08-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Asako Kaneko ,  Hisayuki Takasu ,  Toru Iwaya

IPC: H01J37/20 ,  H01J37/09 ,  H01J37/305 ,  H01J37/30

Abstract: A charged particle beam device that can improve machining position precision in section processing using a shielding plate is provided. The invention is directed to a charged particle beam device including: an ion source (101); a sample stand (106) on which a sample (107) is mounted; a shielding plate (108) placed so that a portion of the sample (107) is exposed when seen from the ion source (101); and tilt units (123, 124) that tilt the sample (107) and the shielding plate (108) relative to the irradiation direction of an ion beam (102) from the ion source (101) to the sample (107).

公开(公告)号：US10332722B2

公开(公告)日：2019-06-25

申请号：US15500392

申请日：2015-07-29

Applicant: Hitachi High-Technologies Corporation

Inventor： Kengo Asai ,  Hiroyasu Shichi ,  Hisayuki Takasu ,  Toru Iwaya

IPC: H01J37/302 ,  H01J37/24 ,  H01J37/08 ,  H01J37/305 ,  H01J37/304 ,  H01J27/04

Abstract: To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method.An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 μm to 350 μm. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.

公开(公告)号：US10008365B2

公开(公告)日：2018-06-26

申请号：US15011980

申请日：2016-02-01

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Toru Iwaya ,  Hirobumi Muto ,  Hisayuki Takasu ,  Atsushi Kamino ,  Asako Kaneko

IPC: H01J37/305 ,  H01J37/30 ,  H01J37/20 ,  H01J37/304

CPC classification number: H01J37/3053 ,  H01J37/20 ,  H01J37/3005 ,  H01J37/3007 ,  H01J37/304 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/26

Abstract: An ion milling device of the present invention is provided with a tilt stage (8) which is disposed in a vacuum chamber (15) and has a tilt axis parallel to a first axis orthogonal to an ion beam, a drive mechanism (9, 51) which has a rotation axis and a tilt axis parallel to a second axis orthogonal to the first axis and rotates or tilts a sample (3), and a switching unit which enables switching between a state in which the ion beam is applied while the sample is rotated or swung while the tilt stage is tilted, and a state in which the ion beams is applied while the tilt stage is brought into an untilted state and the sample is swung. Consequently, the ion milling device capable of performing cross-section processing and flat processing of the sample in the same vacuum chamber is implemented.

公开(公告)号：US09558912B2

公开(公告)日：2017-01-31

申请号：US14890936

申请日：2014-04-28

Applicant: Hitachi High-Technologies Corporation

Inventor： Asako Kaneko ,  Hisayuki Takasu ,  Hirobumi Mutou ,  Toru Iwaya ,  Mami Konomi

IPC: H01J37/20 ,  H01J37/305 ,  H01J37/302 ,  G01K1/14 ,  G01N1/32 ,  H01J37/30

CPC classification number: H01J37/20 ,  G01K1/14 ,  G01N1/32 ,  H01J37/30 ,  H01J37/3002 ,  H01J37/3023 ,  H01J37/3053 ,  H01J2237/002 ,  H01J2237/026 ,  H01J2237/08 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/20271 ,  H01J2237/20285 ,  H01J2237/317

Abstract: The present invention aims at providing an ion milling apparatus for emitting an ion beam to a sample to process the sample and capable of controlling the temperature of the sample with high accuracy regardless of deformation or the like of the sample being irradiated with the ion beam, and proposes an ion milling apparatus including at least one of a shield holding member for supporting a shield for shielding the sample from the ion beam while exposing a part of the sample to the ion beam; a shifting mechanism for shifting a surface of the sample stand in contact with the sample following deformation of the sample during irradiation with the ion beam, the shifting mechanism having a temperature control mechanism for controlling temperature of at least one of the shield holding member and the sample stand; and a sample holding member disposed between the shield and the sample, the sample holding member deforming following deformation of the sample during irradiation with the ion beam, for example.

Abstract translation: 本发明的目的在于提供一种离子铣削装置，用于将离子束发射到样品以处理样品并且能够高精度地控制样品的温度，而不管样品被离子束照射的变形等， 并提出了一种离子铣削装置，其包括屏蔽保持构件中的至少一个，用于支撑用于将样品从离子束屏蔽的屏蔽，同时将一部分样品暴露于离子束; 移动机构，用于使样品台的表面在与离子束照射期间发生变形之后与试样接触而移动，所述移动机构具有温度控制机构，用于控制至少一个屏蔽保持部件和 样品台 以及设置在所述屏蔽体和所述试样之间的样品保持部件，所述样品保持部件例如在用所述离子束照射时，随着所述样品的变形而发生变形。