公开(公告)号：US20200278615A1

公开(公告)日：2020-09-03

申请号：US16645885

申请日：2017-10-13

Applicant: Hitachi High-Technologies Corporation

Inventor： Takuma YAMAMOTO ,  Hiroya OHTA ,  Kenji TANIMOTO ,  Yusuke ABE ,  Tomohiro TAMORI ,  Masaaki NOJIRI

IPC: G03F7/20 ,  G01N23/225 ,  G01B15/04

Abstract: The present invention comprises a computation device for measuring the dimensions of patterns formed on a sample on the basis of a signal obtained from a charged particle beam device. The computation device comprises a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights on the basis of an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

公开(公告)号：US20190066969A1

公开(公告)日：2019-02-28

申请号：US16115103

申请日：2018-08-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kaori BIZEN ,  Yasunari SOHDA ,  Makoto SAKAKIBARA ,  Hiroya OHTA ,  Kenji TANIMOTO ,  Yusuke ABE

IPC: H01J37/153 ,  H01J37/20 ,  H01J37/14 ,  H01J37/147 ,  H01J37/26

Abstract: There is provided a charged particle beam apparatus including: a charged particle source; a condenser lens and an object lens for converging a charged particle beam from the charged particle source and irradiating the converged charged particle beam to a specimen; and plural image shift deflectors for deflecting the charged particle beam. In the charged particle beam apparatus, the deflection of the charged particle beam is controlled using first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes through the center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam to a second optical axis having a predefined incident angle different from the incident angle of the first optical axis.

公开(公告)号：US20210131801A1

公开(公告)日：2021-05-06

申请号：US16638634

申请日：2017-08-25

Applicant: Hitachi High-Technologies Corporation

Inventor： Yasunari SOHDA ,  Yoshinori NAKAYAMA ,  Kaori BIZEN ,  Hiroya OHTA ,  Yusuke ABE

IPC: G01B15/00 ,  H01J37/147 ,  H01J37/20 ,  H01J37/10 ,  H01J37/244 ,  H01J37/28

Abstract: To implement a calibration sample by which an incident angle can be measured with high accuracy, an electron beam adjustment method, and an electron beam apparatus using the calibration sample. To adjust an electron beam using a calibration sample, the calibration sample includes a silicon single crystal substrate 201 whose upper surface is a {110} plane, a first recess structure 202 opening in the upper surface and extending in a first direction, and a second recess structure 203 opening in the upper surface and extending in a second direction intersecting the first direction, in which the first recess structure and the second recess structure each include a first side surface and a first bottom surface that intersects the first side surface, and a second side surface and a second bottom surface that intersects the second side surface, the first side surface and the second side surface are {111} planes, and the first bottom surface and the second bottom surface are crystal planes different from the {110} planes.

公开(公告)号：US20200234916A1

公开(公告)日：2020-07-23

申请号：US16747761

申请日：2020-01-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Kenji YASUI ,  Mayuka OSAKI ,  Makoto SUZUKI ,  Hirohiko KITSUKI ,  Toshiyuki YOKOSUKA ,  Daisuke BIZEN ,  Yusuke ABE

IPC: H01J37/28 ,  H01J37/244 ,  G01N23/2251 ,  H01J37/20

Abstract: To measure a depth of a three-dimensional structure, for example, a hole or a groove, formed in a sample without preparing information for each pattern or calibration in advance. The invention provides an electron microscope including a detection unit that detects, among emitted electrons generated from a sample by irradiating the sample with a primary electron beam, emitted electrons of which an emission angle is in a predetermined range, the emission angle being an angle formed between an axial direction of the primary electron beam and an emission direction of the emitted electrons from the sample, and outputs a detection signal corresponding to the number of the emitted electrons which are detected. In the electron microscope, an emission angle distribution of a detection signal is obtained based on a plurality of detection signals output by the detection unit, the detection signals being obtained by detecting the emitted electrons having emission angles in each of the plurality of set ranges of emission angles and generated by irradiating a bottom portion of the three-dimensional structure with the primary electron beam, and an opening angle is obtained based on a change point of the emission angle distribution, the opening angle being an angle formed between an optical axis direction of the primary electron beam and a straight line that passes through an upper end of a side wall of the three-dimensional structure from a position irradiated with the primary electron beam in the bottom portion of the three-dimensional structure.

公开(公告)号：US20150221471A1

公开(公告)日：2015-08-06

申请号：US14613538

申请日：2015-02-04

Applicant: Hitachi High-Technologies Corporation

Inventor： Michio HATANO ,  Yusuke ABE ,  Zhigang WANG

IPC: H01J37/22 ,  H01J37/26

CPC classification number: H01J37/222 ,  H01J37/28 ,  H01J2237/2448 ,  H01J2237/24495

Abstract: In observation of a sample having a structure in its depth direction, a charged particle beam apparatus that can form an SEM image reflecting a sample shape at a desired depth by a single image acquisition while avoiding enlargement of the apparatus is provided. The apparatus has: an irradiation optical system for irradiating and scanning a charged particle beam generated from a charged particle source on the sample; a detection optical system having a detector that detects charged particles generated from the sample by the irradiation of the charged particle beam, and converts them into an electric signal at a predetermined sampling period; and an image processing unit for forming an image based on the electric signal from the detector, in which the image processing unit detects a peak of wave height values for each pixel from the electric signal at each sampling time, and forms the image based on the peak of the detected wave height values.

Abstract translation: 在观察具有其深度方向结构的样品时，提供了一种带电粒子束装置，其能够通过单次图像获取反映所需深度的样品形状，同时避免该装置的放大。 该装置具有：照射光学系统，用于对从样品上的带电粒子源产生的带电粒子束进行照射和扫描; 检测光学系统，具有检测器，其通过照射带电粒子束来检测从样品产生的带电粒子，并以预定的采样周期将其转换为电信号; 以及图像处理单元，用于基于来自检测器的电信号形成图像，其中图像处理单元在每个采样时间从电信号检测每个像素的波高值的峰值，并且基于 检测到的波高值的峰值。