公开(公告)号：US20190221400A1

公开(公告)日：2019-07-18

申请号：US16311492

申请日：2016-07-28

Applicant: Hitachi High-Technologies Corporation

Inventor： Toshimasa KAMEDA ,  Hiroya OHTA ,  Kenji TANIMOTO

IPC: H01J37/244 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/244 ,  H01J37/1474 ,  H01J37/28 ,  H01J2237/2446 ,  H01J2237/24475 ,  H01J2237/28

Abstract: The purpose of the present invention is to provide a charged particle beam device for detecting, with highly precise angular discrimination, charged particles emitted from a specimen. To achieve this purpose, proposed is a charged particle beam device provided with a scanning deflector for scanning on a specimen a charged particle beam emitted from a charged particle source, the charged particle beam device being provided with: a first detector for detecting charged particles obtained by scanning of the charged particle beam on a specimen, and a second detector placed between the first detector and the specimen, and supported so as to be able to move in the charged particle beam light axis direction.

公开(公告)号：US20200292308A1

公开(公告)日：2020-09-17

申请号：US16086063

申请日：2016-04-13

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroya OHTA ,  Kenji TANIMOTO ,  Tomohiro TAMORI ,  Takuma YAMAMOTO

IPC: G01B15/00 ,  H01J37/147 ,  H01J37/20 ,  H01J37/244

Abstract: The purpose of the present invention is to provide a pattern measurement device that is capable of highly accurately measuring a groove bottom, hole bottom, or the like, regardless of the accuracy of the formation of a deep groove or deep hole. To that end, the present invention proposes a pattern measurement device provided with a computation device for measuring the dimensions of a pattern formed on a sample on the basis of a signal obtained by a charged particle beam device, wherein the computation device determines the deviation between a first part of the pattern and a second part of the pattern at a different height than the first part and pattern dimension values on the basis of a detection signal obtained on the basis of the scanning of the sample by a charged particle beam and corrects the pattern dimension values using the deviation determined from the detection signal and relationship information indicating the relationship between the pattern dimensions and the deviation.

公开(公告)号：US20200278615A1

公开(公告)日：2020-09-03

申请号：US16645885

申请日：2017-10-13

Applicant: Hitachi High-Technologies Corporation

Inventor： Takuma YAMAMOTO ,  Hiroya OHTA ,  Kenji TANIMOTO ,  Yusuke ABE ,  Tomohiro TAMORI ,  Masaaki NOJIRI

IPC: G03F7/20 ,  G01N23/225 ,  G01B15/04

Abstract: The present invention comprises a computation device for measuring the dimensions of patterns formed on a sample on the basis of a signal obtained from a charged particle beam device. The computation device comprises a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights on the basis of an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

公开(公告)号：US20190066969A1

公开(公告)日：2019-02-28

申请号：US16115103

申请日：2018-08-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kaori BIZEN ,  Yasunari SOHDA ,  Makoto SAKAKIBARA ,  Hiroya OHTA ,  Kenji TANIMOTO ,  Yusuke ABE

IPC: H01J37/153 ,  H01J37/20 ,  H01J37/14 ,  H01J37/147 ,  H01J37/26

Abstract: There is provided a charged particle beam apparatus including: a charged particle source; a condenser lens and an object lens for converging a charged particle beam from the charged particle source and irradiating the converged charged particle beam to a specimen; and plural image shift deflectors for deflecting the charged particle beam. In the charged particle beam apparatus, the deflection of the charged particle beam is controlled using first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes through the center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam to a second optical axis having a predefined incident angle different from the incident angle of the first optical axis.

公开(公告)号：US20210131801A1

公开(公告)日：2021-05-06

申请号：US16638634

申请日：2017-08-25

Applicant: Hitachi High-Technologies Corporation

Inventor： Yasunari SOHDA ,  Yoshinori NAKAYAMA ,  Kaori BIZEN ,  Hiroya OHTA ,  Yusuke ABE

IPC: G01B15/00 ,  H01J37/147 ,  H01J37/20 ,  H01J37/10 ,  H01J37/244 ,  H01J37/28

Abstract: To implement a calibration sample by which an incident angle can be measured with high accuracy, an electron beam adjustment method, and an electron beam apparatus using the calibration sample. To adjust an electron beam using a calibration sample, the calibration sample includes a silicon single crystal substrate 201 whose upper surface is a {110} plane, a first recess structure 202 opening in the upper surface and extending in a first direction, and a second recess structure 203 opening in the upper surface and extending in a second direction intersecting the first direction, in which the first recess structure and the second recess structure each include a first side surface and a first bottom surface that intersects the first side surface, and a second side surface and a second bottom surface that intersects the second side surface, the first side surface and the second side surface are {111} planes, and the first bottom surface and the second bottom surface are crystal planes different from the {110} planes.

公开(公告)号：US20130248731A1

公开(公告)日：2013-09-26

申请号：US13733955

申请日：2013-01-04

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Sayaka TANIMOTO ,  Hiroya OHTA ,  Makoto SAKAKIBARA ,  Momoyo ENYAMA ,  Kenji TANIMOTO

IPC: H01J37/10

CPC classification number: H01J37/10 ,  H01J37/153 ,  H01J2237/1205 ,  H01J2237/121 ,  H01J2237/1534

Abstract: There is provided both an electron beam apparatus and a lens array, capable of correcting a curvature of field aberration under various optical conditions. The electron beam apparatus comprises the lens array having a plurality of electrodes, and multiple openings are formed in the respective electrodes. An opening diameter distribution with respect to the respective opening diameters of the plural openings formed in the respective electrodes are individually set, and voltages applied to the respective electrodes are independently controlled to thereby independently adjust an image forming position of a reference beam, and a curvature of the lens array image surface.

Abstract translation: 提供能够在各种光学条件下校正场像差曲率的电子束装置和透镜阵列。 电子束装置包括具有多个电极的透镜阵列，并且在各个电极中形成多个开口。 分别设置相对于形成在各个电极中的多个开口的开口直径的开口直径分布，并且独立地控制施加到各个电极的电压，从而独立地调整参考光束的图像形成位置和曲率 的透镜阵列图像表面。