公开(公告)号：US20180019096A1

公开(公告)日：2018-01-18

申请号：US15544958

申请日：2016-01-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Takashi ICHIMURA ,  Hiroyuki ITO ,  Shinichi KATO ,  Hisaya MURAKOSHI ,  Tadashi FUJIEDA ,  Tatsuya MIYAKE ,  Takashi NAITOU ,  Takuya AOYAGI ,  Kenji TANIMOTO

IPC: H01J37/16 ,  H01J37/12 ,  C23D5/02

CPC classification number: H01J37/16 ,  C23D5/02 ,  H01J9/18 ,  H01J37/065 ,  H01J37/12 ,  H01J37/147 ,  H01J37/3178

Abstract: The purpose of the present invention is to provide a charged particle beam device that exhibits high performance due to the use of vanadium glass coatings, and to provide a method of manufacturing a component for a charged particle beam device. Specifically provided is a charged particle beam device using a vacuum component characterized by comprising a metal container, the interior space of which is evacuated to form a high vacuum, and coating layers formed on the surface on the interior space-side of the metal container, wherein the coating layers are vanadium-containing glass, which is to say an amorphous substance. Coating vanadium glass onto walls of a space where it is desirable to form a high vacuum, for example walls in the vicinity of an electron source, reduces gas discharge in the vicinity of the electron source, and the getter effect of the coating layer induces localized evacuation and enables the formation of an extremely high vacuum, even in spaces having a complex structure, without providing a large high-vacuum pump.

公开(公告)号：US20130248731A1

公开(公告)日：2013-09-26

申请号：US13733955

申请日：2013-01-04

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Sayaka TANIMOTO ,  Hiroya OHTA ,  Makoto SAKAKIBARA ,  Momoyo ENYAMA ,  Kenji TANIMOTO

IPC: H01J37/10

CPC classification number: H01J37/10 ,  H01J37/153 ,  H01J2237/1205 ,  H01J2237/121 ,  H01J2237/1534

Abstract: There is provided both an electron beam apparatus and a lens array, capable of correcting a curvature of field aberration under various optical conditions. The electron beam apparatus comprises the lens array having a plurality of electrodes, and multiple openings are formed in the respective electrodes. An opening diameter distribution with respect to the respective opening diameters of the plural openings formed in the respective electrodes are individually set, and voltages applied to the respective electrodes are independently controlled to thereby independently adjust an image forming position of a reference beam, and a curvature of the lens array image surface.

Abstract translation: 提供能够在各种光学条件下校正场像差曲率的电子束装置和透镜阵列。 电子束装置包括具有多个电极的透镜阵列，并且在各个电极中形成多个开口。 分别设置相对于形成在各个电极中的多个开口的开口直径的开口直径分布，并且独立地控制施加到各个电极的电压，从而独立地调整参考光束的图像形成位置和曲率 的透镜阵列图像表面。

公开(公告)号：US20200090897A1

公开(公告)日：2020-03-19

申请号：US16572999

申请日：2019-09-17

Applicant: Hitachi High-Technologies Corporation

Inventor： Keigo KASUYA ,  Shuhei ISHIKAWA ,  Kenji TANIMOTO ,  Hajime KAWANO ,  Hideo TODOKORO ,  Souichi KATAGIRI ,  Takashi DOI ,  Soichiro MATSUNAGA

IPC: H01J37/075

Abstract: An object of the invention is to stably supply an electron beam from an electron gun, that is, to prevent variation in intensity of the electron beam. The invention provides a charged particle beam device that includes an electron gun having an electron source, an extraction electrode to which a voltage used for extracting electrons from the electron source is applied, and an acceleration electrode to which a voltage used for accelerating the electrons extracted from the electron source is applied, a first heating unit that heats the extraction electrode, and a second heating unit that heats the acceleration electrode.

公开(公告)号：US20190221400A1

公开(公告)日：2019-07-18

申请号：US16311492

申请日：2016-07-28

Applicant: Hitachi High-Technologies Corporation

Inventor： Toshimasa KAMEDA ,  Hiroya OHTA ,  Kenji TANIMOTO

IPC: H01J37/244 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/244 ,  H01J37/1474 ,  H01J37/28 ,  H01J2237/2446 ,  H01J2237/24475 ,  H01J2237/28

Abstract: The purpose of the present invention is to provide a charged particle beam device for detecting, with highly precise angular discrimination, charged particles emitted from a specimen. To achieve this purpose, proposed is a charged particle beam device provided with a scanning deflector for scanning on a specimen a charged particle beam emitted from a charged particle source, the charged particle beam device being provided with: a first detector for detecting charged particles obtained by scanning of the charged particle beam on a specimen, and a second detector placed between the first detector and the specimen, and supported so as to be able to move in the charged particle beam light axis direction.

公开(公告)号：US20200292308A1

公开(公告)日：2020-09-17

申请号：US16086063

申请日：2016-04-13

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroya OHTA ,  Kenji TANIMOTO ,  Tomohiro TAMORI ,  Takuma YAMAMOTO

IPC: G01B15/00 ,  H01J37/147 ,  H01J37/20 ,  H01J37/244

Abstract: The purpose of the present invention is to provide a pattern measurement device that is capable of highly accurately measuring a groove bottom, hole bottom, or the like, regardless of the accuracy of the formation of a deep groove or deep hole. To that end, the present invention proposes a pattern measurement device provided with a computation device for measuring the dimensions of a pattern formed on a sample on the basis of a signal obtained by a charged particle beam device, wherein the computation device determines the deviation between a first part of the pattern and a second part of the pattern at a different height than the first part and pattern dimension values on the basis of a detection signal obtained on the basis of the scanning of the sample by a charged particle beam and corrects the pattern dimension values using the deviation determined from the detection signal and relationship information indicating the relationship between the pattern dimensions and the deviation.

公开(公告)号：US20200278615A1

公开(公告)日：2020-09-03

申请号：US16645885

申请日：2017-10-13

Applicant: Hitachi High-Technologies Corporation

Inventor： Takuma YAMAMOTO ,  Hiroya OHTA ,  Kenji TANIMOTO ,  Yusuke ABE ,  Tomohiro TAMORI ,  Masaaki NOJIRI

IPC: G03F7/20 ,  G01N23/225 ,  G01B15/04

Abstract: The present invention comprises a computation device for measuring the dimensions of patterns formed on a sample on the basis of a signal obtained from a charged particle beam device. The computation device comprises a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights on the basis of an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

公开(公告)号：US20190066969A1

公开(公告)日：2019-02-28

申请号：US16115103

申请日：2018-08-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kaori BIZEN ,  Yasunari SOHDA ,  Makoto SAKAKIBARA ,  Hiroya OHTA ,  Kenji TANIMOTO ,  Yusuke ABE

IPC: H01J37/153 ,  H01J37/20 ,  H01J37/14 ,  H01J37/147 ,  H01J37/26

Abstract: There is provided a charged particle beam apparatus including: a charged particle source; a condenser lens and an object lens for converging a charged particle beam from the charged particle source and irradiating the converged charged particle beam to a specimen; and plural image shift deflectors for deflecting the charged particle beam. In the charged particle beam apparatus, the deflection of the charged particle beam is controlled using first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes through the center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam to a second optical axis having a predefined incident angle different from the incident angle of the first optical axis.