Abstract:
A method of producing a refined copper includes depositing the refined copper on a cathode by an electroplating process or an electroless plating process in an alkaline plating bath including a solution of a copper compound that includes none of sulfur, chlorine and oxygen elements and produces copper ions having a valence of +1 in the solution.
Abstract:
A rectangular conductor for a solar battery and a lead wire for a solar battery, in which warping or damaging of a silicon crystal wafer is hard to occur at the time of bonding a connection lead wire even when a silicon crystal wafer is configured to have a thin sheet structure, can be provided. A conductor 1 having a volume resistivity equal to or less than 50 μΩ·mm, and a 0.2% yield strength value equal to or less than 90 MPa in a tensile test is formed into a rectangular conductor 10 for a solar battery having a rectangular cross section, and a surface of the rectangular conductor 10 for a solar battery is coated with a solder plating film 13, to provide a lead wire 20 for a solar battery.
Abstract:
A signal transmission cable includes a signal line, an insulation layer configured to cover the signal line, and a plating layer configured to cover the insulation layer. An arithmetic average roughness Ra of an outer peripheral surface of the insulation layer is between 0.6 μm and 10 μm inclusive. A method of manufacturing the signal transmission cable includes covering the signal line with the insulation layer, followed by conducting a dry-ice-blasting on the outer peripheral surface of the insulation layer, followed by conducting a corona discharge exposure process on the outer peripheral surface, and forming the plating layer on the outer peripheral surface.
Abstract:
A rectangular conductor for a solar battery and a lead wire for a solar battery, in which warping or damaging of a silicon crystal wafer is hard to occur at the time of bonding a connection lead wire even when a silicon crystal wafer is configured to have a thin sheet structure, can be provided. A conductor 1 having a volume resistivity equal to or less than 50 μΩ·mm, and a 0.2% yield strength value equal to or less than 90 MPa in a tensile test is formed into a rectangular conductor 10 for a solar battery having a rectangular cross section, and a surface of the rectangular conductor 10 for a solar battery is coated with a solder plating film 13, to provide a lead wire 20 for a solar battery.
Abstract:
A copper alloy material includes an additional element M including Ti, and a balance having copper and an inevitable impurity. An atomic ratio of the additional element M to oxygen is in a range of 0.33≦M/O≦1.5.
Abstract translation:铜合金材料包括包含Ti的附加元素M,以及具有铜和不可避免的杂质的余量。 附加元素M与氧的原子比在0.33≤n1E的范围内; M / O和nlE; 1.5。
Abstract:
A signal transmission cable includes a signal line, an insulation layer configured to cover the signal line, and a plating layer configured to cover the insulation layer. An arithmetic average roughness Ra of an outer peripheral surface of the insulation layer is between 0.6 μm and 10 μm inclusive. A method of manufacturing the signal transmission cable includes covering the signal line with the insulation layer, followed by conducting a dry-ice-blasting on the outer peripheral surface of the insulation layer, followed by conducting a corona discharge exposure process on the outer peripheral surface, and forming the plating layer on the outer peripheral surface.
Abstract:
A crimping terminal includes a crimping part that is compressed to a conductive part of an electric wire, and a buffer layer formed on a surface where the crimping part contacts the conductive part. The buffer layer includes a resin, a plating or a grease and a conductive microscopic particle that is mixed and dispersed therein. The microscopic particle includes a fractal structure including a fine protrusion on a surface of the microscopic particle.
Abstract:
A solar cell lead wire includes a molten solder plated layer on a strip-shaped conductive material. The thickness of the oxide film on a surface to the molten solder plate layer is suppressed to be not more than 7 nm.