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公开(公告)号：US08202364B2
公开(公告)日：2012-06-19
申请号：US12389117
申请日：2009-02-19
申请人： Ho-Yong Lee , Jong-Bong Lee , Tae-Moo Hur , Dong-Ho Kim
发明人： Ho-Yong Lee , Jong-Bong Lee , Tae-Moo Hur , Dong-Ho Kim
摘要： By controlling the average size of matrix grains of polycrystalline bodies to more than a critical size at which an abnormal, exaggerated or discontinuous grain growth ends, and less than twice the critical size, large single crystals enough for practical use may be made even without occurring abnormal grain growth in polycrystalline bodies only through a heat treatment process without using a melting process and a special apparatus, thereby allowing the mass production of the large single crystals at low costs with high reproduction possibility.
摘要翻译： 通过将多晶体的基体晶粒的平均尺寸控制到异常，夸张或不连续晶粒生长结束的临界尺寸，并且小于临界尺寸的两倍，即使没有发生，也可以进行足够实用的大的单晶 仅通过热处理工艺而不使用熔融工艺和特殊装置的多晶体晶粒生长异常，从而允许以低成本大量生产大量单晶，具有高再现可能性。
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公开(公告)号：US20050150446A1
公开(公告)日：2005-07-14
申请号：US10507819
申请日：2003-10-09
申请人： Ho-Yong Lee , Jong-Bong Lee , Tae-Moo Hur , Dong-Ho Kim
发明人： Ho-Yong Lee , Jong-Bong Lee , Tae-Moo Hur , Dong-Ho Kim
摘要： The invention relates to a method for growing single crystals in polycrystalline bodies in which abnormal grain growth occurs. The method is characterized by controlling the average size of matrix grains of polycrystalline bodies in which abnormal grain growth occurs, whereby reducing the number density (number of abnormal grains/unit volume) of abnormal grains to generate only a extremely limited number of abnormal grains or inhibit the generation of abnormal grains within the extent of guaranteeing the driving force of abnormal grain growth. Therefore, the invention grows continuously only the extremely limited number of abnormal grains or only the seed single crystal into the polycrystalline body to obtain a large single crystal having a size larger than 50 mm.
摘要翻译： 本发明涉及一种在晶体生长异常的多晶体中生长单晶的方法。 该方法的特征在于控制发生异常晶粒生长的多晶体的基体晶粒的平均尺寸，从而减少异常晶粒的数量密度（异常晶粒数/单位体积），仅产生非常有限数量的异常晶粒或 在保证异常谷物生长的驱动力的程度内抑制异常谷物的产生。 因此，本发明连续生长极限数量的异常晶粒或只将晶种单晶生长到多晶体中，以获得尺寸大于50mm的大单晶。
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3.发明授权公开(公告)号：US08119022B2
公开(公告)日：2012-02-21
申请号：US12092664
申请日：2006-11-06
申请人： Ho-Yong Lee , Sung-Min Lee , Dong-Ho Kim
发明人： Ho-Yong Lee , Sung-Min Lee , Dong-Ho Kim
摘要： A piezoelectric single crystal and piezoelectric and dielectric application parts using the same are provided, which have all of high dielectric constant K3T, high piezoelectric constants (d33 and k33), high phase transition temperatures (Tc and TRT), high coercive electric field Ec and improved mechanical properties and thus can be used in high temperature ranges and high voltage conditions. Furthermore, the piezoelectric single crystals are produced by the solid-state single crystal growth adequate for mass production of single crystals and the single crystal composition is developed not to contain expensive raw materials so that the piezoelectric single crystals can be easily commercialized. With the piezoelectric single crystals and piezoelectric single crystal application parts, the piezoelectric and dielectric application parts using the piezoelectric single crystals of excellent properties can be produced and used in the wide temperature range.
摘要翻译： 提供了具有高介电常数K3T，高压电常数（d33和k33），高相变温度（Tc和TRT），高矫顽电场Ec和高矫顽电场Ec的压电单晶和压电和介电应用部件， 改进的机械性能，因此可以在高温范围和高电压条件下使用。 此外，压电单晶通过适合大量生产单晶的固态单晶生长产生，并且单晶组合物被开发成不含有昂贵的原料，使得压电单晶易于商业化。 使用压电单晶和压电单晶应用部件，可以在宽的温度范围内制造使用具有优异性能的压电单晶的压电和电介质应用部件。
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4.发明申请公开(公告)号：US20080290315A1
公开(公告)日：2008-11-27
申请号：US12092664
申请日：2006-11-06
申请人： Ho-Yong Lee , Sung-Min Lee , Dong-Ho Kim
发明人： Ho-Yong Lee , Sung-Min Lee , Dong-Ho Kim
IPC分类号： H01L41/187 , C30B15/14
摘要： A piezoelectric single crystal and piezoelectric and dielectric application parts using the same are provided, which have all of high dielectric constant K3T, high piezoelectric constants (d33 and k33), high phase transition temperatures (Tc and TRT), high coercive electric field Ec and improved mechanical properties and thus can be used in high temperature ranges and high voltage conditions. Furthermore, the piezoelectric single crystals are produced by the solid-state single crystal growth adequate for mass production of single crystals and the single crystal composition is developed not to contain expensive raw materials so that the piezoelectric single crystals can be easily commercialized. With the piezoelectric single crystals and piezoelectric single crystal application parts, the piezoelectric and dielectric application parts using the piezoelectric single crystals of excellent properties can be produced and used in the wide temperature range.
摘要翻译： 提供了具有高介电常数K3T，高压电常数（d33和k33），高相变温度（Tc和TRT），高矫顽电场Ec和高矫顽电场Ec的压电单晶和压电和介电应用部件， 改进的机械性能，因此可以在高温范围和高电压条件下使用。 此外，压电单晶通过适合大量生产单晶的固态单晶生长产生，并且单晶组合物被开发成不含有昂贵的原料，使得压电单晶易于商业化。 使用压电单晶和压电单晶应用部件，可以在宽的温度范围内制造使用具有优异性能的压电单晶的压电和电介质应用部件。
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公开(公告)号：US08736565B2
公开(公告)日：2014-05-27
申请号：US13238466
申请日：2011-09-21
申请人： Dong-Ho Kim , Ryan Choi , Hyung-Pil Lee
发明人： Dong-Ho Kim , Ryan Choi , Hyung-Pil Lee
IPC分类号： G06F3/041
CPC分类号： G06F3/044
摘要： An embodiment is directed to a touch screen panel including first sensing electrodes, second sensing electrodes, and a pad unit to be electrically connected to the first sensing electrodes and the second sensing electrodes, the touch screen panel including first trace lines connecting the first sensing electrodes and the pad unit, second trace lines connecting the second sensing electrodes and the pad unit, and a ground line connected to a ground power supply, the ground line being between the first trace lines and the second trace lines.
摘要翻译： 实施例涉及包括第一感测电极，第二感测电极和电连接到第一感测电极和第二感测电极的焊盘单元的触摸屏面板，触摸屏面板包括连接第一感测电极的第一迹线 并且所述垫单元，连接所述第二感测电极和所述垫单元的第二轨迹线和连接到地电源的接地线，所述接地线在所述第一迹线线和所述第二迹线之间。
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公开(公告)号：US08723019B2
公开(公告)日：2014-05-13
申请号：US13074199
申请日：2011-03-29
申请人： Dong-Ho Kim
发明人： Dong-Ho Kim
CPC分类号： H01L31/074 , H01L31/03921 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell including: a silicon (Si) substrate; a buffer layer disposed on a side of the silicon substrate; a germanium (Ge) junction disposed on a side of the buffer layer opposite the silicon substrate; a first electrode electrically connected to the germanium junction; and a second electrode electrically connected to the germanium junction, wherein the buffer layer has a lattice constant that increases in a direction from the silicon substrate to the germanium junction.
摘要翻译： 一种太阳能电池，包括：硅（Si）基板; 设置在所述硅基板的一侧的缓冲层; 位于与硅衬底相对的缓冲层侧的锗（Ge）结; 电连接到锗结的第一电极; 以及电连接到所述锗结的第二电极，其中所述缓冲层具有在从所述硅衬底到所述锗结的方向上增加的晶格常数。
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7.发明授权Apparatus and method for collaborative hybrid automatic repeat request (HARQ) in broadband wireless communication using relay station 有权使用中继站的宽带无线通信协同混合自动重传请求（HARQ）的装置和方法公开(公告)号：US08238812B2
公开(公告)日：2012-08-07
申请号：US11982850
申请日：2007-11-05
申请人： Dong-Ho Kim , Yung-Soo Kim , Yeheskel Bar-Ness , Igor Stanojev , Osvaldo Simeone
发明人： Dong-Ho Kim , Yung-Soo Kim , Yeheskel Bar-Ness , Igor Stanojev , Osvaldo Simeone
摘要： A collaborative Hybrid Automatic Repeat reQuest (HARQ) in a broadband wireless communication system using a relay station is provided. A transmitting end includes a distance estimator for estimating a distance to a relay station; a controller for determining whether to execute a collaborative HARQ using the estimated distance to the relay station; and a transmitter for, when the execution of the collaborative HARQ is determined and a retransmission request is received from a receiving end, sending a retransmission packet according to a multiple antenna signal processing scheme by constituting a virtual multiple antenna group with the relay station.
摘要翻译： 提供了在使用中继站的宽带无线通信系统中的协作混合自动重传请求（HARQ）。 发送端包括用于估计到中继站的距离的距离估计器; 控制器，用于使用到所述中继站的估计距离来确定是否执行协作HARQ; 以及发送器，当确定协作HARQ的执行并且从接收端接收到重发请求时，通过与所述中继站构成虚拟多天线组，根据多天线信号处理方案发送重发分组。
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公开(公告)号：US07989801B2
公开(公告)日：2011-08-02
申请号：US12216898
申请日：2008-07-11
申请人： Mu-Gyeom Kim , Jang-Seok Ma , Sung-Hun Lee , Jung-Bae Song , Sang-Yeol Kim , Dong-Ho Kim
发明人： Mu-Gyeom Kim , Jang-Seok Ma , Sung-Hun Lee , Jung-Bae Song , Sang-Yeol Kim , Dong-Ho Kim
IPC分类号： H01L51/00
CPC分类号： H05B33/0896
摘要： Provided are an organic light emitting display device coupled to a photoelectric transistor. The organic light emitting display device includes an anode and a cathode separated from each other, a plurality of organic material layers formed between the anode and the cathode and including an organic light emitting layer, a light source applying an excitation pulse to the organic material layers, and a light receiving unit measuring changes in photoluminescence (PL) signals that are emitted from the organic material layers.
摘要翻译： 提供了耦合到光电晶体管的有机发光显示装置。 有机发光显示装置包括彼此分离的阳极和阴极，形成在阳极和阴极之间的多个有机材料层，并且包括有机发光层，向有机材料层施加激发脉冲的光源 以及光接收单元，测量从有机材料层发射的光致发光（PL）信号的变化。
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公开(公告)号：US20110047432A1
公开(公告)日：2011-02-24
申请号：US12098765
申请日：2008-04-07
CPC分类号： H03M13/1102 , H04L1/0043 , H04L1/0057
摘要： Disclosed is a method and apparatus for coding in a communication system. The coding method includes generating an information codeword vector from an information vector, generating a first vector in the information vector from an information part of a parity check matrix, generating a first parity codeword vector by performing an exclusive OR operation of the first vector and a second vector corresponding to a cyclically shifted version of the first vector, and generating a second parity codeword vector by performing an exclusive OR operation of the first vector, the first parity codeword vector, and a third vector. The third vector is a cyclically shifted version of a vector resulting from the exclusive OR operation of the first vector, the first parity codeword vector, and a fed-back third vector.
摘要翻译： 公开了一种在通信系统中进行编码的方法和装置。 编码方法包括从信息向量生成信息码字矢量，从奇偶校验矩阵的信息部分生成信息矢量中的第一矢量，通过执行第一矢量的异或运算，生成第一奇偶码字矢量， 第二矢量对应于第一矢量的循环移位版本，并且通过执行第一矢量，第一奇偶码字矢量和第三矢量的异或运算来产生第二奇偶码字矢量。 第三矢量是由第一矢量，第一奇偶码字矢量和反馈第三矢量的异或运算产生的矢量的循环移位版本。
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公开(公告)号：US07734988B2
公开(公告)日：2010-06-08
申请号：US11541749
申请日：2006-10-02
申请人： Dong-Ho Kim , Yung-Soo Kim , Ye-Hoon Lee , Myeon-Gyun Cho , Hyo-Yol Park , Keum-Chan Whang , Kwang-Soon Kim , Jae-Won Kang
发明人： Dong-Ho Kim , Yung-Soo Kim , Ye-Hoon Lee , Myeon-Gyun Cho , Hyo-Yol Park , Keum-Chan Whang , Kwang-Soon Kim , Jae-Won Kang
IPC分类号： H03M13/35
CPC分类号： H03M13/1102 , H03M13/6306 , H03M13/6362
摘要： A method for puncturing a Low Density Parity Check (LDPC). The method includes a) setting a codeword length and the total number of bit nodes to be punctured; b) selecting a check node (or check nodes) with highest priority excluding check nodes completely checked in a current round; c) selecting a bit node (or bit nodes) with a highest priority excluding bit nodes completely checked among bit nodes connected to the selected check node (or check nodes); d) determining whether the selected bit node is a bit node to be punctured, that is, it is not systematic, not set by a puncturing prohibition flag; e) puncturing an associated bit node if the selected bit node is the bit node to be punctured, setting unpunctured bit nodes connected to the selected check node by a puncturing prohibition flag, decreasing the number of remained bit nodes to be punctured by 1 and increasing the number of connected punctured node of associated check node by 1; f) determining whether the number of remaining bits to be punctured is greater than 0; and g) returning to step b) if the number of remaining bits to be punctured is greater than 0, and ending a puncturing process if the number of remaining bits to be punctured is not greater than 0.
摘要翻译： 一种用于打孔低密度奇偶校验（LDPC）的方法。 该方法包括：a）设置码字长度和要被穿孔的比特节点的总数; b）选择具有最高优先级的校验节点（或校验节点），不包括在当前轮次中完全检查的校验节点; c）选择具有最高优先级的比特节点（或比特节点），不包括连接到所选择的校验节点（或校验节点）的比特节点之间完全检查的比特节点; d）确定所选择的比特节点是否是要被穿孔的比特节点，即，它不是系统的，不被打孔禁止标志设置; e）如果选择的比特节点是要被穿孔的比特节点，则对相关联的比特节点进行穿孔，通过打孔禁止标志来设置连接到所选择的校验节点的未穿孔比特节点，将要被穿孔的剩余比特节点的数量减少1并增加 相关检查节点的连接穿孔节点数目为1; f）确定要穿孔的剩余比特数是否大于0; 以及g）如果要删除的剩余比特数大于0，则返回到步骤b），并且如果要穿孔的剩余比特数不大于0，则结束打孔处理。
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