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公开(公告)号：US08754416B2
公开(公告)日：2014-06-17
申请号：US11604094
申请日：2006-11-24
申请人： Hoi-Sing Kwok , Man Wong , Zhiguo Meng , Dongli Zhang , Jiaxin Sun , Xiuling Zhu
发明人： Hoi-Sing Kwok , Man Wong , Zhiguo Meng , Dongli Zhang , Jiaxin Sun , Xiuling Zhu
IPC分类号： H01L31/036
CPC分类号： H01L27/124
摘要： The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.
摘要翻译： 本发明提供一种有源矩阵薄膜晶体管阵列的方法，包括由一层金属导体形成的两层金属互连; 源极，漏极和栅电极的薄膜晶体管，全部或部分被金属取代，其中像素电极是多晶硅。
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公开(公告)号：US20080203394A1
公开(公告)日：2008-08-28
申请号：US11604094
申请日：2006-11-24
申请人： Hoi-Sing Kwok , Man Wong , Zhiguo Meng , Dongli Zhang , Jiaxin Sun , Xiuling Zhu
发明人： Hoi-Sing Kwok , Man Wong , Zhiguo Meng , Dongli Zhang , Jiaxin Sun , Xiuling Zhu
IPC分类号： H01L31/036 , H01L21/00
CPC分类号： H01L27/124
摘要： The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.
摘要翻译： 本发明提供一种有源矩阵薄膜晶体管阵列的方法，包括由一层金属导体形成的两层金属互连; 源极，漏极和栅电极的薄膜晶体管，全部或部分被金属取代，其中像素电极是多晶硅。
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3.发明申请POLYCRYSTALLINE SILICON AS AN ELECTRODE FOR A LIGHT EMITTING DIODE & METHOD OF MAKING THE SAME 有权作为发光二极管的电极的多晶硅及其制造方法公开(公告)号：US20090134790A1
公开(公告)日：2009-05-28
申请号：US12339431
申请日：2008-12-19
申请人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Jiaxin Sun , Xiuling Zhu
发明人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Jiaxin Sun , Xiuling Zhu
CPC分类号： H01L27/3248 , H01L27/1214 , H01L27/1277 , H01L51/5088 , H01L51/5206
摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.
摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。
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公开(公告)号：US20070114522A1
公开(公告)日：2007-05-24
申请号：US11590531
申请日：2006-10-31
申请人： Hoi-Sing Kwok , Man Wong , Jiaxin Sun , Zhiguo Meng , Xiuling Zhu
发明人： Hoi-Sing Kwok , Man Wong , Jiaxin Sun , Zhiguo Meng , Xiuling Zhu
IPC分类号： H01L29/08
CPC分类号： H01L27/3209 , G09G3/3216 , G09G3/3233 , G09G2300/0426 , G09G2300/0439 , H01L27/3202 , H01L27/3267 , H01L27/3286 , H01L2251/5323
摘要： An organic light-emitting diode display which can display independent images on both sides is described. This display can be driven with passive matrix or active matrix schemes. The invention combines a unique stacked organic diode structure and special driving schemes involving time-sequential reversed fields.
摘要翻译： 描述可以在两侧显示独立图像的有机发光二极管显示器。 该显示可以用无源矩阵或有源矩阵方案驱动。 本发明结合了独特的堆叠有机二极管结构和涉及时序反向场的特殊驱动方案。
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5.发明授权公开(公告)号：US08339026B2
公开(公告)日：2012-12-25
申请号：US13043135
申请日：2011-03-08
申请人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Jiaxin Sun , Xiuling Zhu
发明人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Jiaxin Sun , Xiuling Zhu
IPC分类号： H01L33/00
CPC分类号： H01L27/3248 , H01L27/1214 , H01L27/1277 , H01L51/5088 , H01L51/5206
摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.
摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。
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公开(公告)号：US08263968B2
公开(公告)日：2012-09-11
申请号：US11590531
申请日：2006-10-31
申请人： Hoi-Sing Kwok , Man Wong , Jiaxin Sun , Zhiguo Meng , Xiuling Zhu
发明人： Hoi-Sing Kwok , Man Wong , Jiaxin Sun , Zhiguo Meng , Xiuling Zhu
CPC分类号： H01L27/3209 , G09G3/3216 , G09G3/3233 , G09G2300/0426 , G09G2300/0439 , H01L27/3202 , H01L27/3267 , H01L27/3286 , H01L2251/5323
摘要： An organic light-emitting diode display which can display independent images on both sides is described. This display can be driven with passive matrix or active matrix schemes. The invention combines a unique stacked organic diode structure and special driving schemes involving time-sequential reversed fields.
摘要翻译： 描述可以在两侧显示独立图像的有机发光二极管显示器。 该显示可以用无源矩阵或有源矩阵方案驱动。 本发明结合了独特的堆叠有机二极管结构和涉及时序反向场的特殊驱动方案。
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7.发明申请公开(公告)号：US20110159610A1
公开(公告)日：2011-06-30
申请号：US13043135
申请日：2011-03-08
申请人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Jiaxin Sun , Xiuling Zhu
发明人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Jiaxin Sun , Xiuling Zhu
IPC分类号： H01L33/00
CPC分类号： H01L27/3248 , H01L27/1214 , H01L27/1277 , H01L51/5088 , H01L51/5206
摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.
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8.发明授权公开(公告)号：US07923911B2
公开(公告)日：2011-04-12
申请号：US12339431
申请日：2008-12-19
申请人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Jiaxin Sun , Xiuling Zhu
发明人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Jiaxin Sun , Xiuling Zhu
CPC分类号： H01L27/3248 , H01L27/1214 , H01L27/1277 , H01L51/5088 , H01L51/5206
摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.
摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。
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9.发明申请Polycrystalline silicon as an electrode for a light emitting diode & method of making the same 审中-公开作为发光二极管的电极的多晶硅及其制造方法公开(公告)号：US20060103299A1
公开(公告)日：2006-05-18
申请号：US11272471
申请日：2005-11-10
申请人： Hoi Kwok , Man Wong , Zhiguo Meng , Jiaxin Sun , Xiuling Zhu
发明人： Hoi Kwok , Man Wong , Zhiguo Meng , Jiaxin Sun , Xiuling Zhu
IPC分类号： H01L51/00
CPC分类号： H01L27/3248 , H01L27/1214 , H01L27/1277 , H01L51/5088 , H01L51/5206
摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.
摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。
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10.发明授权Metallic anode treated by carbon tetrafluoride plasma for organic light emitting device 有权用四氟化碳等离子体处理有机发光器件的金属阳极公开(公告)号：US09166197B2
公开(公告)日：2015-10-20
申请号：US11479773
申请日：2006-06-29
申请人： Hoi Sing Kwok , Man Wong , Huajun Peng , Jiaxin Sun
发明人： Hoi Sing Kwok , Man Wong , Huajun Peng , Jiaxin Sun
IPC分类号： H01L51/52
CPC分类号： H01L51/5265 , H01L51/5206 , H01L51/5218
摘要： The invention provides an organic light emitting diode (OLED), having a substrate, an anode layer of silver or gold, wherein the anode layer is treated with CF4 plasma to enhance the hole injection of the semitransparent anode layer.
摘要翻译： 本发明提供了一种有机发光二极管（OLED），其具有衬底，银或金的阳极层，其中阳极层用CF 4等离子体处理以增强半透明阳极层的空穴注入。
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