公开(公告)号：US20070114522A1

公开(公告)日：2007-05-24

申请号：US11590531

申请日：2006-10-31

申请人： Hoi-Sing Kwok ,  Man Wong ,  Jiaxin Sun ,  Zhiguo Meng ,  Xiuling Zhu

发明人： Hoi-Sing Kwok ,  Man Wong ,  Jiaxin Sun ,  Zhiguo Meng ,  Xiuling Zhu

IPC分类号： H01L29/08

CPC分类号： H01L27/3209 ,  G09G3/3216 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0439 ,  H01L27/3202 ,  H01L27/3267 ,  H01L27/3286 ,  H01L2251/5323

摘要： An organic light-emitting diode display which can display independent images on both sides is described. This display can be driven with passive matrix or active matrix schemes. The invention combines a unique stacked organic diode structure and special driving schemes involving time-sequential reversed fields.

摘要翻译： 描述可以在两侧显示独立图像的有机发光二极管显示器。 该显示可以用无源矩阵或有源矩阵方案驱动。 本发明结合了独特的堆叠有机二极管结构和涉及时序反向场的特殊驱动方案。

公开(公告)号：US20090134790A1

公开(公告)日：2009-05-28

申请号：US12339431

申请日：2008-12-19

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L27/3248 ,  H01L27/1214 ,  H01L27/1277 ,  H01L51/5088 ,  H01L51/5206

摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。

公开(公告)号：US20080203394A1

公开(公告)日：2008-08-28

申请号：US11604094

申请日：2006-11-24

申请人： Hoi-Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Dongli Zhang ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi-Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Dongli Zhang ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L31/036 ,  H01L21/00

CPC分类号： H01L27/124

摘要： The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.

摘要翻译： 本发明提供一种有源矩阵薄膜晶体管阵列的方法，包括由一层金属导体形成的两层金属互连; 源极，漏极和栅电极的薄膜晶体管，全部或部分被金属取代，其中像素电极是多晶硅。

公开(公告)号：US08754416B2

公开(公告)日：2014-06-17

申请号：US11604094

申请日：2006-11-24

申请人： Hoi-Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Dongli Zhang ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi-Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Dongli Zhang ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L31/036

CPC分类号： H01L27/124

摘要： The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.

摘要翻译： 本发明提供一种有源矩阵薄膜晶体管阵列的方法，包括由一层金属导体形成的两层金属互连; 源极，漏极和栅电极的薄膜晶体管，全部或部分被金属取代，其中像素电极是多晶硅。

公开(公告)号：US08339026B2

公开(公告)日：2012-12-25

申请号：US13043135

申请日：2011-03-08

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L33/00

CPC分类号： H01L27/3248 ,  H01L27/1214 ,  H01L27/1277 ,  H01L51/5088 ,  H01L51/5206

摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。

公开(公告)号：US08263968B2

公开(公告)日：2012-09-11

申请号：US11590531

申请日：2006-10-31

申请人： Hoi-Sing Kwok ,  Man Wong ,  Jiaxin Sun ,  Zhiguo Meng ,  Xiuling Zhu

发明人： Hoi-Sing Kwok ,  Man Wong ,  Jiaxin Sun ,  Zhiguo Meng ,  Xiuling Zhu

IPC分类号： H01L51/52 ,  H01L27/32

CPC分类号： H01L27/3209 ,  G09G3/3216 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0439 ,  H01L27/3202 ,  H01L27/3267 ,  H01L27/3286 ,  H01L2251/5323

摘要： An organic light-emitting diode display which can display independent images on both sides is described. This display can be driven with passive matrix or active matrix schemes. The invention combines a unique stacked organic diode structure and special driving schemes involving time-sequential reversed fields.

摘要翻译： 描述可以在两侧显示独立图像的有机发光二极管显示器。 该显示可以用无源矩阵或有源矩阵方案驱动。 本发明结合了独特的堆叠有机二极管结构和涉及时序反向场的特殊驱动方案。

公开(公告)号：US20110159610A1

公开(公告)日：2011-06-30

申请号：US13043135

申请日：2011-03-08

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L33/00

CPC分类号： H01L27/3248 ,  H01L27/1214 ,  H01L27/1277 ,  H01L51/5088 ,  H01L51/5206

摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

公开(公告)号：US07923911B2

公开(公告)日：2011-04-12

申请号：US12339431

申请日：2008-12-19

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01J1/62

CPC分类号： H01L27/3248 ,  H01L27/1214 ,  H01L27/1277 ,  H01L51/5088 ,  H01L51/5206

摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。

公开(公告)号：US20060103299A1

公开(公告)日：2006-05-18

申请号：US11272471

申请日：2005-11-10

申请人： Hoi Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L51/00

CPC分类号： H01L27/3248 ,  H01L27/1214 ,  H01L27/1277 ,  H01L51/5088 ,  H01L51/5206

摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。

公开(公告)号：US09299863B2

公开(公告)日：2016-03-29

申请号：US12437236

申请日：2009-05-07

申请人： Hoi Sing Kwok ,  Zhiguo Meng ,  Man Wong

发明人： Hoi Sing Kwok ,  Zhiguo Meng ,  Man Wong

IPC分类号： H01L31/0236 ,  H01L31/076 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

CPC分类号： H01L31/0236 ,  H01L31/028 ,  H01L31/03682 ,  H01L31/076 ,  H01L31/077 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell photovoltaic device using ultrathin films of polycrystalline silicon and deep uneven surface structures is disclosed. According to one embodiment, the uneven structures include one or more pits having a depth of at least 10 microns. According to another embodiment, the uneven structures include one or more cones or columns having a height or at least 10 microns. Because the unevenness of the structures, the photovoltaic device is able to use a very thin layer of polycrystalline silicon to effectively trap and absorb light.

摘要翻译： 公开了一种使用多晶硅和深凹凸表面结构的超薄膜的太阳能电池光伏器件。 根据一个实施例，不平坦结构包括具有至少10微米深度的一个或多个凹坑。 根据另一个实施例，不平坦结构包括具有高度或至少10微米的一个或多个锥体或柱。 由于结构的不均匀性，光伏器件能够使用非常薄的多晶硅层来有效地捕获和吸收光。