公开(公告)号：US20070114522A1

公开(公告)日：2007-05-24

申请号：US11590531

申请日：2006-10-31

申请人： Hoi-Sing Kwok ,  Man Wong ,  Jiaxin Sun ,  Zhiguo Meng ,  Xiuling Zhu

发明人： Hoi-Sing Kwok ,  Man Wong ,  Jiaxin Sun ,  Zhiguo Meng ,  Xiuling Zhu

IPC分类号： H01L29/08

CPC分类号： H01L27/3209 ,  G09G3/3216 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0439 ,  H01L27/3202 ,  H01L27/3267 ,  H01L27/3286 ,  H01L2251/5323

摘要： An organic light-emitting diode display which can display independent images on both sides is described. This display can be driven with passive matrix or active matrix schemes. The invention combines a unique stacked organic diode structure and special driving schemes involving time-sequential reversed fields.

摘要翻译： 描述可以在两侧显示独立图像的有机发光二极管显示器。 该显示可以用无源矩阵或有源矩阵方案驱动。 本发明结合了独特的堆叠有机二极管结构和涉及时序反向场的特殊驱动方案。

公开(公告)号：US20090134790A1

公开(公告)日：2009-05-28

申请号：US12339431

申请日：2008-12-19

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L27/3248 ,  H01L27/1214 ,  H01L27/1277 ,  H01L51/5088 ,  H01L51/5206

摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。

公开(公告)号：US20080203394A1

公开(公告)日：2008-08-28

申请号：US11604094

申请日：2006-11-24

申请人： Hoi-Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Dongli Zhang ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi-Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Dongli Zhang ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L31/036 ,  H01L21/00

CPC分类号： H01L27/124

摘要： The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.

摘要翻译： 本发明提供一种有源矩阵薄膜晶体管阵列的方法，包括由一层金属导体形成的两层金属互连; 源极，漏极和栅电极的薄膜晶体管，全部或部分被金属取代，其中像素电极是多晶硅。

公开(公告)号：US08754416B2

公开(公告)日：2014-06-17

申请号：US11604094

申请日：2006-11-24

申请人： Hoi-Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Dongli Zhang ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi-Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Dongli Zhang ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L31/036

CPC分类号： H01L27/124

摘要： The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.

摘要翻译： 本发明提供一种有源矩阵薄膜晶体管阵列的方法，包括由一层金属导体形成的两层金属互连; 源极，漏极和栅电极的薄膜晶体管，全部或部分被金属取代，其中像素电极是多晶硅。

公开(公告)号：US08339026B2

公开(公告)日：2012-12-25

申请号：US13043135

申请日：2011-03-08

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L33/00

CPC分类号： H01L27/3248 ,  H01L27/1214 ,  H01L27/1277 ,  H01L51/5088 ,  H01L51/5206

摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。

公开(公告)号：US08263968B2

公开(公告)日：2012-09-11

申请号：US11590531

申请日：2006-10-31

申请人： Hoi-Sing Kwok ,  Man Wong ,  Jiaxin Sun ,  Zhiguo Meng ,  Xiuling Zhu

发明人： Hoi-Sing Kwok ,  Man Wong ,  Jiaxin Sun ,  Zhiguo Meng ,  Xiuling Zhu

IPC分类号： H01L51/52 ,  H01L27/32

CPC分类号： H01L27/3209 ,  G09G3/3216 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0439 ,  H01L27/3202 ,  H01L27/3267 ,  H01L27/3286 ,  H01L2251/5323

摘要： An organic light-emitting diode display which can display independent images on both sides is described. This display can be driven with passive matrix or active matrix schemes. The invention combines a unique stacked organic diode structure and special driving schemes involving time-sequential reversed fields.

摘要翻译： 描述可以在两侧显示独立图像的有机发光二极管显示器。 该显示可以用无源矩阵或有源矩阵方案驱动。 本发明结合了独特的堆叠有机二极管结构和涉及时序反向场的特殊驱动方案。

公开(公告)号：US20110159610A1

公开(公告)日：2011-06-30

申请号：US13043135

申请日：2011-03-08

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L33/00

CPC分类号： H01L27/3248 ,  H01L27/1214 ,  H01L27/1277 ,  H01L51/5088 ,  H01L51/5206

摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

公开(公告)号：US07923911B2

公开(公告)日：2011-04-12

申请号：US12339431

申请日：2008-12-19

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01J1/62

CPC分类号： H01L27/3248 ,  H01L27/1214 ,  H01L27/1277 ,  H01L51/5088 ,  H01L51/5206

摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。

公开(公告)号：US20060103299A1

公开(公告)日：2006-05-18

申请号：US11272471

申请日：2005-11-10

申请人： Hoi Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L51/00

CPC分类号： H01L27/3248 ,  H01L27/1214 ,  H01L27/1277 ,  H01L51/5088 ,  H01L51/5206

摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。

公开(公告)号：US07572912B2

公开(公告)日：2009-08-11

申请号：US10977200

申请日：2004-10-29

申请人： Vivian Wing-Wah Yam ,  Man-Chung Wong ,  Hoi-Sing Kwok ,  Xiuling Zhu

发明人： Vivian Wing-Wah Yam ,  Man-Chung Wong ,  Hoi-Sing Kwok ,  Xiuling Zhu

IPC分类号： C07F1/12 ,  C09K11/58

CPC分类号： C07F1/00 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1029 ,  C09K2211/188 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0081 ,  H01L51/0084 ,  H01L51/5016 ,  H05B33/14 ,  Y10S428/917

摘要： A class of luminescent gold(III) compounds with a tridentate ligand and at least one strong σ-donating group having the chemical structure represented by the general formula (I): wherein R1-R4 each independently represent the group containing hydrogen, halogen, alkynyl, substituted alkynyl, alkyl, substituted alkyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxyl, substituted alkoxyl, amino, substituted amino, cyano, nitro, alkylcarbonyl, alkoxycarbonyl, arylcarbonyl, aryloxycarbonyl, mono- or dialkylaminocarbonyl, alkylcarbonyloxy, arylcarbonyloxy, aryloxy, alkoxycarbonyl, aryloxycarbonyloxy group, and the like; X, Y and Z each independently represent a heteroatom or a carbon; represents an aromatic or heterocyclic 5- or 6-membered ring; α and β each independently represent a bridge for an aromatic or heterocyclic 5- or 6-membered ring or represent a break for non-cyclic moiety; C—X, C—Y and C—Z each independently represent a single bond or double bond; n represents a zero or an integer; p, q and r represent positive integers.

摘要翻译： 一类具有三齿配体和至少一个具有由通式（I）表示的化学结构的强献素基团的发光金（III）化合物：其中R 1 -R 4各自独立地表示含有氢的基团，卤素，炔基 取代的芳基，取代的烷氧基，氨基，取代的氨基，氰基，硝基，烷基羰基，烷氧基羰基，芳基羰基，芳氧基羰基，一或二烷基氨基羰基，烷基羰基氧基，芳基羰基氧基， 芳氧基，烷氧基羰基，芳氧基羰氧基等; X，Y和Z各自独立地表示杂原子或碳; 表示芳族或杂环的5或6元环; α和β各自独立地表示芳族或杂环的5或6元环的桥，或代表非环状部分的断裂; C-X，C-Y和C-Z各自独立地表示单键或双键; n表示零或整数; p，q和r表示正整数。