公开(公告)号：US08476681B2

公开(公告)日：2013-07-02

申请号：US13050557

申请日：2011-03-17

申请人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

发明人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

IPC分类号： H01L27/148

CPC分类号： H01L27/1464 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14645 ,  H01L27/14685

摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

摘要翻译： 提供背面照明感光装置及相关方法。 在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理化区域，以及位于 在纹理化区域和至少一个结点之间。 定位钝化区以将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理化区域之前穿过半导体衬底。 另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

公开(公告)号：US20120313204A1

公开(公告)日：2012-12-13

申请号：US13493891

申请日：2012-06-11

申请人： Homayoon Haddad ,  Jeffrey McKee ,  Jutao Jiang ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

发明人： Homayoon Haddad ,  Jeffrey McKee ,  Jutao Jiang ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/0232 ,  H01L31/18

摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

摘要翻译： 提供背面照明感光装置及相关方法。 在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域，其中纹理区域包括表面 特征尺寸和位置便于调谐到预选的波长的光，以及位于纹理化区域和至少一个结之间的电介质区域。 电介质区域被定位成将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理区域之前穿过半导体衬底。 另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

公开(公告)号：US20110220971A1

公开(公告)日：2011-09-15

申请号：US13050557

申请日：2011-03-17

申请人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

发明人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

IPC分类号： H01L27/148 ,  H01L31/0236 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/112

CPC分类号： H01L27/1464 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14645 ,  H01L27/14685

摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

摘要翻译： 提供背面照明感光装置及相关方法。 在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理化区域，以及位于 在纹理化区域和至少一个结点之间。 定位钝化区以将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理化区域之前穿过半导体衬底。 另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

公开(公告)号：US09496308B2

公开(公告)日：2016-11-15

申请号：US13493891

申请日：2012-06-11

申请人： Homayoon Haddad ,  Jeffrey McKee ,  Jutao Jiang ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

发明人： Homayoon Haddad ,  Jeffrey McKee ,  Jutao Jiang ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

IPC分类号： H01L27/00 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/0232 ,  H01L31/18

摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

摘要翻译： 提供背面照明感光装置及相关方法。 在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域，其中纹理区域包括表面 特征尺寸和位置便于调谐到预选的波长的光，以及位于纹理化区域和至少一个结之间的电介质区域。 电介质区域被定位成将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理区域之前穿过半导体衬底。 另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

公开(公告)号：US08680591B2

公开(公告)日：2014-03-25

申请号：US12885158

申请日：2010-09-17

申请人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Leonard Forbes ,  Chintamani Palsule

发明人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Leonard Forbes ,  Chintamani Palsule

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464

摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

摘要翻译： 提供光敏设备和相关方法。 在一个方面，例如，光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域以及耦合到 半导体衬底并且可操作以从所述至少一个结转移电信号。 在一个方面，纹理化区域可操作以便于从红外线电磁辐射的检测中产生电信号。 在另一方面，与电磁辐射相互作用进一步包括与缺少纹理区域的半导体衬底相比增加半导体衬底的有效吸收波长。

公开(公告)号：US20120313205A1

公开(公告)日：2012-12-13

申请号：US13493918

申请日：2012-06-11

申请人： Homayoon Haddad ,  Jeffrey McKee ,  Jutao Jiang ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

发明人： Homayoon Haddad ,  Jeffrey McKee ,  Jutao Jiang ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

IPC分类号： H01L31/0236 ,  H01L31/18 ,  H01L27/148

CPC分类号： H01L31/02363 ,  H01L27/1462 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14687 ,  Y02E10/50

摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a frontside-illuminated photosensitive imager devices can include a semiconductor substrate having multiple doped regions forming a least one junction and a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation on an opposite side of the semiconductor substrate from the multiple doped regions. The textured region can include surface features sized and positioned to facilitate tuning to a preselected wavelength of light. The device can also include an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction.

摘要翻译： 提供光敏设备和相关方法。 在一个方面，例如，前照射光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底和耦合到半导体衬底的纹理区域，并且被定位成与电极的相对侧上的电磁辐射相互作用 半导体衬底从多个掺杂区域。 纹理区域可以包括尺寸和位置的表面特征，以便于调谐到预选的波长的光。 该装置还可以包括耦合到半导体衬底并可操作以从至少一个结转移电信号的电转移元件。

公开(公告)号：US20110227138A1

公开(公告)日：2011-09-22

申请号：US12885158

申请日：2010-09-17

申请人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Leonard Forbes ,  Chintamani Palsule

发明人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Leonard Forbes ,  Chintamani Palsule

IPC分类号： H01L31/0232 ,  H01L31/113 ,  H01L31/18

CPC分类号： H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464

摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

摘要翻译： 提供光敏设备和相关方法。 在一个方面，例如，光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域，以及耦合到 半导体衬底并且可操作以从所述至少一个结转移电信号。 在一个方面，纹理化区域可操作以便于从红外线电磁辐射的检测中产生电信号。 在另一方面，与电磁辐射相互作用进一步包括与缺少纹理区域的半导体衬底相比增加半导体衬底的有效吸收波长。

公开(公告)号：US20120146172A1

公开(公告)日：2012-06-14

申请号：US13164630

申请日：2011-06-20

申请人： James Carey ,  Drake Miller

发明人： James Carey ,  Drake Miller

IPC分类号： H01L31/0236

CPC分类号： H01L31/02024 ,  H01L27/1446 ,  H01L27/14629 ,  H01L27/14643 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/103 ,  Y02E10/50

摘要： High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.

摘要翻译： 提供高速光电子器件及相关方法。 在一个方面，例如，高速光电子器件可以包括具有入射光表面的硅材料，在硅材料中形成半导体结的第一掺杂区域和第二掺杂区域，以及耦合到硅材料的纹理区域 并定位成与电磁辐射相互作用。 对于具有至少一个波长为约800nm至约1200nm的电磁辐射，光电子器件的响应时间为约1皮秒至约5纳秒，响应度大于或等于约0.4A / W。