公开(公告)号：US08476681B2

公开(公告)日：2013-07-02

申请号：US13050557

申请日：2011-03-17

申请人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

发明人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

IPC分类号： H01L27/148

CPC分类号： H01L27/1464 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14645 ,  H01L27/14685

摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

摘要翻译： 提供背面照明感光装置及相关方法。 在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理化区域，以及位于 在纹理化区域和至少一个结点之间。 定位钝化区以将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理化区域之前穿过半导体衬底。 另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

公开(公告)号：US20120313204A1

公开(公告)日：2012-12-13

申请号：US13493891

申请日：2012-06-11

申请人： Homayoon Haddad ,  Jeffrey McKee ,  Jutao Jiang ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

发明人： Homayoon Haddad ,  Jeffrey McKee ,  Jutao Jiang ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/0232 ,  H01L31/18

摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

摘要翻译： 提供背面照明感光装置及相关方法。 在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域，其中纹理区域包括表面 特征尺寸和位置便于调谐到预选的波长的光，以及位于纹理化区域和至少一个结之间的电介质区域。 电介质区域被定位成将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理区域之前穿过半导体衬底。 另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

公开(公告)号：US20110220971A1

公开(公告)日：2011-09-15

申请号：US13050557

申请日：2011-03-17

申请人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

发明人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

IPC分类号： H01L27/148 ,  H01L31/0236 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/112

CPC分类号： H01L27/1464 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14645 ,  H01L27/14685

摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

摘要翻译： 提供背面照明感光装置及相关方法。 在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理化区域，以及位于 在纹理化区域和至少一个结点之间。 定位钝化区以将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理化区域之前穿过半导体衬底。 另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

公开(公告)号：US09496308B2

公开(公告)日：2016-11-15

申请号：US13493891

申请日：2012-06-11

申请人： Homayoon Haddad ,  Jeffrey McKee ,  Jutao Jiang ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

发明人： Homayoon Haddad ,  Jeffrey McKee ,  Jutao Jiang ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

IPC分类号： H01L27/00 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/0232 ,  H01L31/18

摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

摘要翻译： 提供背面照明感光装置及相关方法。 在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域，其中纹理区域包括表面 特征尺寸和位置便于调谐到预选的波长的光，以及位于纹理化区域和至少一个结之间的电介质区域。 电介质区域被定位成将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理区域之前穿过半导体衬底。 另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

公开(公告)号：US08680591B2

公开(公告)日：2014-03-25

申请号：US12885158

申请日：2010-09-17

申请人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Leonard Forbes ,  Chintamani Palsule

发明人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Leonard Forbes ,  Chintamani Palsule

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464

摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

摘要翻译： 提供光敏设备和相关方法。 在一个方面，例如，光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域以及耦合到 半导体衬底并且可操作以从所述至少一个结转移电信号。 在一个方面，纹理化区域可操作以便于从红外线电磁辐射的检测中产生电信号。 在另一方面，与电磁辐射相互作用进一步包括与缺少纹理区域的半导体衬底相比增加半导体衬底的有效吸收波长。

公开(公告)号：US20120313205A1

公开(公告)日：2012-12-13

申请号：US13493918

申请日：2012-06-11

申请人： Homayoon Haddad ,  Jeffrey McKee ,  Jutao Jiang ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

发明人： Homayoon Haddad ,  Jeffrey McKee ,  Jutao Jiang ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

IPC分类号： H01L31/0236 ,  H01L31/18 ,  H01L27/148

CPC分类号： H01L31/02363 ,  H01L27/1462 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14687 ,  Y02E10/50

摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a frontside-illuminated photosensitive imager devices can include a semiconductor substrate having multiple doped regions forming a least one junction and a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation on an opposite side of the semiconductor substrate from the multiple doped regions. The textured region can include surface features sized and positioned to facilitate tuning to a preselected wavelength of light. The device can also include an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction.

摘要翻译： 提供光敏设备和相关方法。 在一个方面，例如，前照射光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底和耦合到半导体衬底的纹理区域，并且被定位成与电极的相对侧上的电磁辐射相互作用 半导体衬底从多个掺杂区域。 纹理区域可以包括尺寸和位置的表面特征，以便于调谐到预选的波长的光。 该装置还可以包括耦合到半导体衬底并可操作以从至少一个结转移电信号的电转移元件。

公开(公告)号：US20110227138A1

公开(公告)日：2011-09-22

申请号：US12885158

申请日：2010-09-17

申请人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Leonard Forbes ,  Chintamani Palsule

发明人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Leonard Forbes ,  Chintamani Palsule

IPC分类号： H01L31/0232 ,  H01L31/113 ,  H01L31/18

CPC分类号： H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464

摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

摘要翻译： 提供光敏设备和相关方法。 在一个方面，例如，光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域，以及耦合到 半导体衬底并且可操作以从所述至少一个结转移电信号。 在一个方面，纹理化区域可操作以便于从红外线电磁辐射的检测中产生电信号。 在另一方面，与电磁辐射相互作用进一步包括与缺少纹理区域的半导体衬底相比增加半导体衬底的有效吸收波长。

公开(公告)号：US08698084B2

公开(公告)日：2014-04-15

申请号：US13418226

申请日：2012-03-12

申请人： Jutao Jiang ,  Jeffrey McKee ,  Homayoon Haddad ,  Chris Sungkwon Hong

发明人： Jutao Jiang ,  Jeffrey McKee ,  Homayoon Haddad ,  Chris Sungkwon Hong

IPC分类号： G01J5/02 ,  H01L27/14

CPC分类号： H01L27/14647 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface.

摘要翻译： 提供3D传感器，系统和相关方法。 在一个方面，例如，用于检测红外和可见光的单片3D传感器可以包括具有器件表面的半导体衬底，在器件表面处形成的至少一个可见光光电二极管和在器件表面处形成的至少一个3D光电二极管 靠近所述至少一个可见光光电二极管。 该装置还可以包括功能上耦合到至少一个3D光电二极管并定位成与电磁辐射相互作用的量子效率增强的红外光区域。 在一个方面，量子效率增强红外光区域是位于器件表面处的纹理区域。

公开(公告)号：US20130062522A1

公开(公告)日：2013-03-14

申请号：US13418226

申请日：2012-03-12

申请人： Jutao Jiang ,  Jeffrey McKee ,  Homayoon Haddad ,  Chris Sungkwon Hong

发明人： Jutao Jiang ,  Jeffrey McKee ,  Homayoon Haddad ,  Chris Sungkwon Hong

IPC分类号： G01J5/22 ,  B82Y15/00

CPC分类号： H01L27/14647 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface.

摘要翻译： 提供3D传感器，系统和相关方法。 在一个方面，例如，用于检测红外和可见光的单片3D传感器可以包括具有器件表面的半导体衬底，在器件表面处形成的至少一个可见光光电二极管和在器件表面处形成的至少一个3D光电二极管 靠近所述至少一个可见光光电二极管。 该装置还可以包括功能上耦合到至少一个3D光电二极管并定位成与电磁辐射相互作用的量子效率增强的红外光区域。 在一个方面，量子效率增强红外光区域是位于器件表面处的纹理区域。

公开(公告)号：US20070262355A1

公开(公告)日：2007-11-15

申请号：US11707848

申请日：2007-02-16

申请人： Chintamani Palsule ,  Changhoon Choi ,  Fredrick LaMaster ,  John Stanback ,  Thomas Dungan ,  Thomas Joy ,  Homayoon Haddad

发明人： Chintamani Palsule ,  Changhoon Choi ,  Fredrick LaMaster ,  John Stanback ,  Thomas Dungan ,  Thomas Joy ,  Homayoon Haddad

IPC分类号： H01L27/148

CPC分类号： H01L27/14643 ,  H01L27/14601 ,  H01L29/66659 ,  H01L31/035281

摘要： A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate. A channel implant of the first conductivity type extending from between a midpoint of the transfer gate and the floating diffusion to at least across the photodiode and having a dopant concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than the floating diffusion, and wherein a peak dopant concentration of the channel implant is at a level and at a depth below the surface such that a partially-buried channel is formed in the transfer region between the photodiode and floating diffusion when the transfer gate is energized.

摘要翻译： 包括具有第一导电类型并具有表面的衬底的像素，与第一导电类型相反的第二导电类型的光电检测器，第二导电类型的浮动扩散区域，光电检测器和浮动扩散区之间的传输区域 位于所述转印区域上方并且部分地与所述光电检测器重叠的栅极以及至少从所述栅极延伸穿过所述光电检测器的所述第一导电类型的钉扎层。 第一导电类型的沟道植入物从传输栅极的中点和浮动扩散延伸到至少跨越光电二极管并具有掺杂剂浓度，使得传输区域的掺杂剂浓度在接近光电检测器处比浮置 扩散，并且其中沟道注入的峰值掺杂剂浓度处于表面以下的水平和深度，使得当传输栅极通电时，在光电二极管和浮动扩散之间的传输区域中形成部分埋置的沟道。