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    CARBON NANOTUBE MEMORY CELL WITH ENHANCED CURRENT CONTROL
    1.
    发明申请
    CARBON NANOTUBE MEMORY CELL WITH ENHANCED CURRENT CONTROL 有权
    碳纳米管存储器，具有增强的电流控制

    公开(公告)号：US20140241052A1

    公开(公告)日：2014-08-28

    申请号：US13777592

    申请日：2013-02-26

    申请人： HONEYWELL INTERNATIONAL INC.

    发明人： Keith W. Golke ,  David K. Nelson

    IPC分类号： G11C7/00 ,  G11C11/40

    CPC分类号： G11C11/40 ,  B82Y10/00 ,  G11C13/0002 ,  G11C13/0069 ,  G11C13/025 ,  G11C2013/0071 ,  G11C2213/79

    摘要： A desired current through a carbon nano tube (CNT) element of a CNT memory device can be controlled by a wordline voltage, and a voltage on the CNT common node can be held constant. The common node can be constant at a source voltage if a p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) is used in the CNT memory device, or the common node can be constant at a supply voltage if an n-channel MOSFET is used in the CNT memory device

    摘要翻译： 可以通过字线电压来控制通过CNT存储器件的碳纳米管（CNT）元件的期望电流，并且可以将CNT公共节点上的电压保持恒定。 如果在CNT存储器件中使用p沟道金属氧化物半导体场效应晶体管（MOSFET），则公共节点可以在源极电压下恒定，或者如果n- 沟道MOSFET用于CNT存储器件

    Carbon nanotube memory cell with enhanced current control
    2.
    发明授权
    Carbon nanotube memory cell with enhanced current control 有权
    具有增强电流控制的碳纳米管记忆体

    公开(公告)号：US09165633B2

    公开(公告)日：2015-10-20

    申请号：US13777592

    申请日：2013-02-26

    申请人： Honeywell International Inc.

    发明人： Keith W. Golke ,  David K. Nelson

    IPC分类号： G11C7/00 ,  G11C11/40 ,  G11C13/00 ,  G11C13/02 ,  B82Y10/00

    CPC分类号： G11C11/40 ,  B82Y10/00 ,  G11C13/0002 ,  G11C13/0069 ,  G11C13/025 ,  G11C2013/0071 ,  G11C2213/79

    摘要： A desired current through a carbon nano tube (CNT) element of a CNT memory device can be controlled by a wordline voltage, and a voltage on the CNT common node can be held constant. The common node can be constant at a source voltage if a p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) is used in the CNT memory device, or the common node can be constant at a supply voltage if an n-channel MOSFET is used in the CNT memory device.

    摘要翻译： 可以通过字线电压来控制通过CNT存储器件的碳纳米管（CNT）元件的期望电流，并且可以将CNT公共节点上的电压保持恒定。 如果在CNT存储器件中使用p沟道金属氧化物半导体场效应晶体管（MOSFET），则公共节点可以在源极电压下恒定，或者如果n- 沟道MOSFET用于CNT存储器件。

    Dual redundant memory radiation hardening
    3.
    发明授权
    Dual redundant memory radiation hardening 有权

    公开(公告)号：US11614995B2

    公开(公告)日：2023-03-28

    申请号：US17450716

    申请日：2021-10-13

    申请人： Honeywell International Inc.

    发明人： David K. Nelson ,  Robert Rabe ,  Keith Goike

    IPC分类号： G06F11/10 ,  G11C15/04

    摘要： A method for storing data includes determining, using a first match line, that a match word satisfies a first content addressable memory (CAM) word stored in a CAM array, wherein the CAM array is configured to store a second CAM word that matches the first CAM word. The method further includes determining that a first parity bit associated with the first CAM word matches a first parity of the first CAM word. The method further includes, in response to determining that the first parity bit associated with the first CAM word matches the first parity determining, using the first match line, a first random access memory (RAM) word stored in a RAM array and outputting the first RAM word.

    DUAL REDUNDANT MEMORY RADIATION HARDENING
    4.
    发明申请
    DUAL REDUNDANT MEMORY RADIATION HARDENING 有权

    公开(公告)号：US20220197738A1

    公开(公告)日：2022-06-23

    申请号：US17450716

    申请日：2021-10-13

    申请人： Honeywell International Inc.

    发明人： David K. Nelson ,  Robert Rabe ,  Keith Golke

    IPC分类号： G06F11/10 ,  G11C15/04

    摘要： A method for storing data includes determining, using a first match line, that a match word satisfies a first content addressable memory (CAM) word stored in a CAM array, wherein the CAM array is configured to store a second CAM word that matches the first CAM word. The method further includes determining that a first parity bit associated with the first CAM word matches a first parity of the first CAM word. The method further includes, in response to determining that the first parity bit associated with the first CAM word matches the first parity determining, using the first match line, a first random access memory (RAM) word stored in a RAM array and outputting the first RAM word.

    SELF-TERMINATING WRITE FOR A MEMORY CELL
    6.
    发明申请
    SELF-TERMINATING WRITE FOR A MEMORY CELL 审中-公开
    用于存储单元的自我终止写入

    公开(公告)号：US20150117087A1

    公开(公告)日：2015-04-30

    申请号：US14068683

    申请日：2013-10-31

    申请人： Honeywell International Inc.

    发明人： Keith Golke ,  David K. Nelson

    IPC分类号： G11C13/00 ,  G11C11/16

    CPC分类号： G11C13/0069 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0011 ,  G11C13/0064 ,  G11C13/025 ,  G11C2013/0066 ,  G11C2211/5624 ,  G11C2213/79

    摘要： A programmable impedance based memory device includes a programmable impedance element, read circuitry configured to determine a resistance of the programmable impedance element during a write operation; and, write circuitry configured to change the resistance of the programmable impedance element as part of performing the write operation, wherein the write circuitry is further configured to terminate the write operation based on the read circuitry detecting that the resistance of the programmable impedance element has passed a threshold value.

    摘要翻译： 基于可编程阻抗的存储器件包括可编程阻抗元件，读取电路，被配置为在写入操作期间确定可编程阻抗元件的电阻; 以及写电路，被配置为改变作为执行写操作的一部分的可编程阻抗元件的电阻，其中写电路还被配置为基于读电路来终止写操作，该读电路检测到可编程阻抗元件的电阻已经通过 一个阈值。