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1.发明授权Method for inspecting overlay shift defect during semiconductor manufacturing and apparatus thereof 有权在半导体制造期间检查重叠移位缺陷的方法及其装置公开(公告)号：US08923601B2
公开(公告)日：2014-12-30
申请号：US13240721
申请日：2011-09-22
CPC分类号： G03F7/70633
摘要： A method for inspecting overlay shift defect during semiconductor manufacturing is disclosed herein and includes a step for providing a charged particle microscopic image of a sample, a step for identifying an inspection pattern measure in the charged particle microscopic image, a step for averaging the charged particle microscopic image by using the inspection pattern measure to form an averaged inspection pattern measure, a step for estimating an average width from the averaged inspection pattern measure, and a step for comparing the average width with a predefined threshold value to determine the presence of the overlay shift defect.
摘要翻译： 本文公开了一种用于在半导体制造期间检查覆盖偏移缺陷的方法，并且包括用于提供样品的带电粒子显微镜图像的步骤，用于识别带电粒子显微镜图像中的检查图案测量的步骤，用于使带电粒子平均的步骤 通过使用检查图案测量形成平均检查图案测量的微观图像，从平均检查图案度量估计平均宽度的步骤，以及将平均宽度与预定阈值进行比较以确定覆盖层的存在的步骤 移位缺陷。
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公开(公告)号：US08432441B2
公开(公告)日：2013-04-30
申请号：US13032105
申请日：2011-02-22
IPC分类号： H04N7/18
CPC分类号： H04N7/18 , G06T7/0004 , G06T7/001 , G06T2207/10061 , G06T2207/20016 , G06T2207/30148 , H04N7/183
摘要： A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.
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3.发明申请Method for Inspecting Overlay Shift Defect during Semiconductor Manufacturing and Apparatus Thereof 有权半导体制造过程中检查覆盖偏移缺陷的方法及其设备公开(公告)号：US20100278416A1
公开(公告)日：2010-11-04
申请号：US12433762
申请日：2009-04-30
CPC分类号： H01L21/67242 , G03F7/70633
摘要： A method of inspecting for overlay shift defects during semiconductor manufacturing is disclosed. The method can include the steps of providing a charged particle microscopic image of a sample, identifying an inspection pattern period in the charged particle microscopic image, averaging the charged particle microscopic image by using the inspection pattern period to form an averaged inspection pattern period, estimating an average width from the averaged inspection pattern period, and comparing the average width with a predefined threshold value to determine the presence of an overlay shift defect.
摘要翻译： 公开了一种在半导体制造期间检查覆盖偏移缺陷的方法。 该方法可以包括以下步骤：提供样品的带电粒子显微镜图像，识别带电粒子显微镜图像中的检查图案周期，通过使用检查图案周期平均化带电粒子显微镜图像以形成平均检查图案周期，估计 从平均检查图案周期的平均宽度，以及将平均宽度与预定义的阈值进行比较，以确定覆盖位移缺陷的存在。
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4.发明授权Method for inspecting overlay shift defect during semiconductor manufacturing and apparatus thereof 有权在半导体制造期间检查重叠移位缺陷的方法及其装置公开(公告)号：US08050490B2
公开(公告)日：2011-11-01
申请号：US12433762
申请日：2009-04-30
IPC分类号： G06K9/00
CPC分类号： H01L21/67242 , G03F7/70633
摘要： A method of inspecting for overlay shift defects during semiconductor manufacturing is disclosed. The method can include the steps of providing a charged particle microscopic image of a sample, identifying an inspection pattern period in the charged particle microscopic image, averaging the charged particle microscopic image by using the inspection pattern period to form an averaged inspection pattern period, estimating an average width from the averaged inspection pattern period, and comparing the average width with a predefined threshold value to determine the presence of an overlay shift defect.
摘要翻译： 公开了一种在半导体制造期间检查覆盖偏移缺陷的方法。 该方法可以包括以下步骤：提供样品的带电粒子显微镜图像，识别带电粒子显微镜图像中的检查图案周期，通过使用检查图案周期平均化带电粒子显微镜图像以形成平均检查图案周期，估计 从平均检查图案周期的平均宽度，以及将平均宽度与预定义的阈值进行比较，以确定覆盖位移缺陷的存在。
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5.发明申请METHOD FOR DETERMINING ABNORMAL CHARACTERISTICS IN INTEGRATED CIRCUIT MANUFACTURING PROCESS 审中-公开确定集成电路制造工艺中异常特性的方法公开(公告)号：US20080267489A1
公开(公告)日：2008-10-30
申请号：US12109243
申请日：2008-04-24
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T2207/10056 , G06T2207/30148
摘要： A method for determining abnormal characteristics in integrated circuit manufacturing process is disclosed. The method comprises obtaining a charged particle microscope image of a sample test structure, wherein the sample including a reference pattern and a test pattern; measuring gray levels of the reference pattern and the test pattern; calculating a standard deviation from a distribution of the gray levels of the reference pattern measured; and determining the abnormal characteristics of the test pattern based on the gray levels measured and the standard deviation.
摘要翻译： 公开了一种用于确定集成电路制造工艺中的异常特性的方法。 该方法包括获得样品测试结构的带电粒子显微镜图像，其中样品包括参考图案和测试图案; 测量参考图案和测试图案的灰度级; 计算与测量的参考图案的灰度分布的标准偏差; 并基于所测量的灰度级和标准偏差确定测试图案的异常特性。
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公开(公告)号：US20120027287A1
公开(公告)日：2012-02-02
申请号：US13269038
申请日：2011-10-07
申请人： Wei FANG , Zhao-Li Zhang , Jack Jau
发明人： Wei FANG , Zhao-Li Zhang , Jack Jau
IPC分类号： G06K9/00
CPC分类号： G06T7/0008 , G06T7/001 , G06T2207/20081 , G06T2207/30148
摘要： A method of classifying the defects on a wafer having some same chips and corresponding system is provided. After receiving images formed by scanning the wafer using a charged particle beam, these images are examined such that both defective images and defect-free images are found. Then, the defect-free images are translated into a simulated layout of the chip, or a database is used to provide the simulated layout of the chip. Finally, the defects on the defective images are classified by comparing the images with the simulated layout of the chip. The system has some modules separately corresponds to the steps of the method.
摘要翻译： 提供了在具有相同芯片和相应系统的晶片上分类缺陷的方法。 在接收到通过使用带电粒子束扫描晶片形成的图像之后，检查这些图像，使得发现缺陷图像和无缺陷图像。 然后，将无缺陷图像转换为芯片的模拟布局，或者使用数据库来提供芯片的模拟布局。 最后，通过将图像与芯片的模拟布局进行比较来分类缺陷图像上的缺陷。 系统有一些模块分别对应于该方法的步骤。
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公开(公告)号：US20100327160A1
公开(公告)日：2010-12-30
申请号：US12491013
申请日：2009-06-24
CPC分类号： H01J37/265 , H01J37/28 , H01J2237/2817
摘要： A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.
摘要翻译： 一种用扫描带电粒子束成像装置检查样品的方法。 首先，在样品的表面上指定图像区域和扫描区域。 这里，图像区域在扫描区域内完全重叠。 接下来，通过使用带电粒子束沿着既不平行也不垂直于扫描区域的取向的方向来扫描扫描区域。 可能的是，与图像区域重叠的扫描区域的仅一部分暴露于带电粒子束。 图像区域的形状和尺寸也可能与扫描区域的形状和尺寸基本相同，使得由带电粒子束投射的区域的尺寸几乎等于图像区域的尺寸。
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公开(公告)号：US08606017B1
公开(公告)日：2013-12-10
申请号：US13073161
申请日：2011-03-28
申请人： Wei Fang , Jack Jau , Zhao-Li Zhang
发明人： Wei Fang , Jack Jau , Zhao-Li Zhang
CPC分类号： G06K9/628 , G06K9/3216
摘要： A plurality of points with identical geometric feature is compared with their SEM characteristic features to inspect defect in a localized image. Original design information is included in the geometric feature such that absolute compare can be performed in this inspection method. Further, this method can also be applied to the localized image with or without repeated or redundant pattern.
摘要翻译： 将具有相同几何特征的多个点与其SEM特征相比较以检查局部图像中的缺陷。 原始设计信息包含在几何特征中，使得可以在该检查方法中进行绝对比较。 此外，该方法也可以应用于具有或不具有重复或冗余模式的局部图像。
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公开(公告)号：US08094924B2
公开(公告)日：2012-01-10
申请号：US12335458
申请日：2008-12-15
申请人： Jack Jau , Zhongwei Chen , Yi Xiang Wang , Chung-Shih Pan , Joe Wang , Xuedong Liu , Weiming Ren , Wei Fang
发明人： Jack Jau , Zhongwei Chen , Yi Xiang Wang , Chung-Shih Pan , Joe Wang , Xuedong Liu , Weiming Ren , Wei Fang
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G01N23/04 , G01N2223/102 , G01N2223/426 , G01N2223/611 , G06T2207/10061 , G06T2207/30148
摘要： An apparatus comprises an imaging unit to image a wafer to be reviewed, wherein imaging unit is the modified SORIL column. The modified SORIL column includes a focusing sub-system to do micro-focusing due to a wafer surface topology, wherein the focusing sub-system verifies the position of a grating image reflecting from the wafer surface to adjust the focus; and a surface charge control to regulate the charge accumulation due to electron irradiation during the review process, wherein the gaseous molecules are injected under a flood gun beam rather than under a primary beam. The modified SORIL column further includes a storage unit for storing wafer design database; and a host computer to manage defect locating, defect sampling, and defect classifying, wherein the host computer and storage unit are linked by high speed network.
摘要翻译： 一种装置包括成像单元以对待审查的晶片进行成像，其中成像单元是经修改的SORIL柱。 改进的SORIL柱包括由于晶片表面拓扑而进行微聚焦的聚焦子系统，其中聚焦子系统验证从晶片表面反射的光栅图像的位置以调整焦点; 以及表面电荷控制，用于调节在复查过程期间由于电子辐射引起的电荷累积，其中气体分子在洪水枪光束下而不是在主光束下方注入。 改进的SORIL列还包括用于存储晶片设计数据库的存储单元; 以及用于管理缺陷定位，缺陷采样和缺陷分类的主计算机，其中主计算机和存储单元通过高速网络链接。
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公开(公告)号：US09494856B1
公开(公告)日：2016-11-15
申请号：US13154483
申请日：2011-06-07
IPC分类号： G03F1/84 , H05K1/00 , G03F1/00 , G06T7/00 , G01N21/956
CPC分类号： G03F1/84 , G01N21/9501 , G01N21/95607 , G01N23/2251 , G03F1/144 , G03F1/86 , G03F7/7065 , G06T7/0004 , G06T7/001 , G06T2207/10061 , G06T2207/30141 , G06T2207/30148 , H05K1/00
摘要： A method and system for inspecting defects saves scanned raw data as an original image so as to save time for repeated scanning and achieve faster defect inspection and lower false rate by reviewing suspicious defects and other regions of interest in the original image by using the same or different image-processing algorithm with the same or different parameters.
摘要翻译： 用于检查缺陷的方法和系统将扫描的原始数据保存为原始图像，从而节省重复扫描的时间，并通过使用相同的方式检查原始图像中的可疑缺陷和其他感兴趣的区域，从而实现更快的缺陷检查和降低错误率 不同的图像处理算法具有相同或不同的参数。
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