IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
    图像传感器及其制造方法

    公开(公告)号:US20090206432A1

    公开(公告)日:2009-08-20

    申请号:US12266856

    申请日:2008-11-07

    摘要: An image sensor and a method of manufacturing the same are provided. The image sensor includes a substrate having a sensor array area and a peripheral circuit area a first insulating film structure formed on the peripheral circuit area and including a plurality of first multi-layer wiring lines and a second insulating film structure formed on the sensor array area and including a plurality of second multi-layer wiring lines. The uppermost-layer wiring line of the plurality of first multi-layer wiring lines is higher than that of the uppermost-layer wiring line of the plurality of second multi-layer wiring lines. The first insulating film structure includes an isotropic etch-stop layer, and the second insulating film structure does not include the isotropic etch-stop layer.

    摘要翻译: 提供了图像传感器及其制造方法。 图像传感器包括具有传感器阵列区域的基板和形成在外围电路区域上的第一绝缘膜结构的外围电路区域,并且包括形成在传感器阵列区域上的多个第一多层布线和第二绝缘膜结构 并且包括多个第二多层布线。 多个第一多层布线的最上层布线比多个第二多层布线的最上层布线高。 第一绝缘膜结构包括各向同性蚀刻停止层,第二绝缘膜结构不包括各向同性蚀刻停止层。