公开(公告)号：US20090206432A1

公开(公告)日：2009-08-20

申请号：US12266856

申请日：2008-11-07

申请人： Hong-Ki KIM ,  Duck-Hyung LEE ,  Hyun-Pil NOH

发明人： Hong-Ki KIM ,  Duck-Hyung LEE ,  Hyun-Pil NOH

IPC分类号： H01L31/09 ,  H01L21/311 ,  H01L31/0232

CPC分类号： H01L27/14632 ,  H01L27/14636 ,  H01L27/14685

摘要： An image sensor and a method of manufacturing the same are provided. The image sensor includes a substrate having a sensor array area and a peripheral circuit area a first insulating film structure formed on the peripheral circuit area and including a plurality of first multi-layer wiring lines and a second insulating film structure formed on the sensor array area and including a plurality of second multi-layer wiring lines. The uppermost-layer wiring line of the plurality of first multi-layer wiring lines is higher than that of the uppermost-layer wiring line of the plurality of second multi-layer wiring lines. The first insulating film structure includes an isotropic etch-stop layer, and the second insulating film structure does not include the isotropic etch-stop layer.

摘要翻译： 提供了图像传感器及其制造方法。 图像传感器包括具有传感器阵列区域的基板和形成在外围电路区域上的第一绝缘膜结构的外围电路区域，并且包括形成在传感器阵列区域上的多个第一多层布线和第二绝缘膜结构 并且包括多个第二多层布线。 多个第一多层布线的最上层布线比多个第二多层布线的最上层布线高。 第一绝缘膜结构包括各向同性蚀刻停止层，第二绝缘膜结构不包括各向同性蚀刻停止层。

公开(公告)号：US20110080511A1

公开(公告)日：2011-04-07

申请号：US12899273

申请日：2010-10-06

申请人： Yun-Ki LEE ,  Duck-Hyung LEE

发明人： Yun-Ki LEE ,  Duck-Hyung LEE

IPC分类号： H04N5/335 ,  H01L27/146

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687

摘要： An image sensor and a method of fabricating the same are provided. The image sensor includes a substrate having a pixel region including a plurality of unit pixels and a non-pixel region, at least one first well in the non-pixel region, an interconnect structure on a first side of the substrate, and a base well in the non-pixel region and between the first well and a second side of the substrate.

摘要翻译： 提供了图像传感器及其制造方法。 图像传感器包括具有包括多个单位像素和非像素区域的像素区域的基板，非像素区域中的至少一个第一阱，基板的第一侧上的互连结构，以及基底阱 在非像素区域以及衬底的第一阱和第二侧之间。

公开(公告)号：US20080150057A1

公开(公告)日：2008-06-26

申请号：US11951070

申请日：2007-12-05

申请人： Yun-Ki LEE ,  Duck-Hyung LEE ,  Chang-Rok MOON ,  Sung-Ho HWANG ,  Doo-Won KWON ,  Gil-Sang YOO ,  Seung-Hun SHIN

发明人： Yun-Ki LEE ,  Duck-Hyung LEE ,  Chang-Rok MOON ,  Sung-Ho HWANG ,  Doo-Won KWON ,  Gil-Sang YOO ,  Seung-Hun SHIN

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

摘要： An image sensor and a method of manufacturing the same are disclosed. An image sensor is formed by forming a photoelectric transformation element at a front surface of a semiconductor substrate in an active pixel sensor region and in an optical black region of the semiconductor substrate, subjecting a surface of the semiconductor substrate opposite the front surface to a removal process to create a back surface of the semiconductor substrate, and forming a light blocking film pattern on the back surface in the optical black region. The light blocking film pattern includes an organic material.

摘要翻译： 公开了一种图像传感器及其制造方法。 通过在半导体衬底的有源像素传感器区域和半导体衬底的光学黑色区域中的半导体衬底的前表面处形成光电转换元件来形成图像传感器，使得与前表面相对的半导体衬底的表面被去除 处理以形成半导体衬底的背面，并在光学黑色区域的后表面上形成遮光膜图案。 遮光膜图案包括有机材料。