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1.发明授权Composition for stripping photoresist and method for manufacturing thin transistor array panel using the same 有权用于剥离光刻胶的组合物和使用其制造薄晶体管阵列面板的方法公开(公告)号：US07553710B2
公开(公告)日：2009-06-30
申请号：US11873791
申请日：2007-10-17
申请人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
发明人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
CPC分类号： G03F7/425 , H01L21/31133 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.
摘要翻译： 本发明提供了一种光致抗蚀剂剥离器，其包括约5重量％至约20重量％的醇胺，约40重量％至约70重量％的二醇醚，约20重量％至约40重量％的N-甲基吡咯烷酮，以及约0.2重量％ ％至约6重量％的螯合剂。
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2.发明授权Composition for stripping photoresist and method for manufacturing thin transistor array panel using the same 有权用于剥离光刻胶的组合物和使用其制造薄晶体管阵列面板的方法公开(公告)号：US08012921B2
公开(公告)日：2011-09-06
申请号：US11865795
申请日：2007-10-02
申请人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
发明人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
IPC分类号： C11D7/50
CPC分类号： G03F7/425 , H01L21/31133 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.
摘要翻译： 本发明提供了一种光致抗蚀剂剥离器，其包括约5重量％至约20重量％的醇胺，约40重量％至约70重量％的二醇醚，约20重量％至约40重量％的N-甲基吡咯烷酮，以及约0.2重量％ ％至约6重量％的螯合剂。
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公开(公告)号：US20080085850A1
公开(公告)日：2008-04-10
申请号：US11865795
申请日：2007-10-02
申请人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
发明人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
IPC分类号： G03F7/42
CPC分类号： G03F7/425 , H01L21/31133 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.
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4.发明授权Composition for stripping photoresist and method for manufacturing thin film transistor array panel using the same 有权用于剥离光刻胶的组合物和使用其制造薄膜晶体管阵列面板的方法公开(公告)号：US07294518B2
公开(公告)日：2007-11-13
申请号：US11217400
申请日：2005-09-02
申请人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
发明人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
IPC分类号： H01L21/00
CPC分类号： G03F7/425 , H01L21/31133 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.
摘要翻译： 本发明提供了一种光致抗蚀剂剥离器，其包括约5重量％至约20重量％的醇胺，约40重量％至约70重量％的二醇醚，约20重量％至约40重量％的N-甲基吡咯烷酮，以及约0.2重量％ ％至约6重量％的螯合剂。
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5.发明申请COMPOSITION FOR STRIPPING PHOTORESIST AND METHOD FOR MANUFACTURING THIN TRANSISTOR ARRAY PANEL USING THE SAME 有权用于剥离光刻胶的组合物和使用其制造薄膜晶体管阵列的方法公开(公告)号：US20080032432A1
公开(公告)日：2008-02-07
申请号：US11873791
申请日：2007-10-17
申请人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
发明人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
IPC分类号： H01L21/311
CPC分类号： G03F7/425 , H01L21/31133 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.
摘要翻译： 本发明提供了一种光致抗蚀剂剥离器，其包括约5重量％至约20重量％的醇胺，约40重量％至约70重量％的二醇醚，约20重量％至约40重量％的N-甲基吡咯烷酮，以及约0.2重量％ ％至约6重量％的螯合剂。
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6.发明申请Composition for stripping photoresist and method for manufacturing thin transistor array panel using the same 有权用于剥离光刻胶的组合物和使用其制造薄晶体管阵列面板的方法公开(公告)号：US20060204896A1
公开(公告)日：2006-09-14
申请号：US11217400
申请日：2005-09-02
申请人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
发明人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
CPC分类号： G03F7/425 , H01L21/31133 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： The present invention provides a photoresist stripper comprising about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.
摘要翻译： 本发明提供一种光致抗蚀剂剥离器，其包括约5重量％至约20重量％的醇胺，约40重量％至约70重量％的二醇醚，约20重量％至约40重量％的N-甲基吡咯烷酮，以及约0.2重量％ ％至约6重量％的螯合剂。
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7.发明授权公开(公告)号：US08084184B2
公开(公告)日：2011-12-27
申请号：US12323649
申请日：2008-11-26
申请人： Jong-Hyun Choung , Hong-Sick Park , Sun-Young Hong , Bong-Kyun Kim , Byeoung-Jin Lee , Byung-Uk Kim , Jong-Hyun Jeong , Suk-Il Yoon , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang
发明人： Jong-Hyun Choung , Hong-Sick Park , Sun-Young Hong , Bong-Kyun Kim , Byeoung-Jin Lee , Byung-Uk Kim , Jong-Hyun Jeong , Suk-Il Yoon , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang
CPC分类号： G03F7/425
摘要： A composition for removing a photoresist includes a) an amine compound having a cyclic amine and/or a diamine, b) a glycol ether compound, c) a corrosion inhibitor and d) a polar solvent. The composition further includes a stripping promoter. Further disclosed is a method of manufacturing an array substrate using the composition for removing a photoresist.
摘要翻译： 用于除去光致抗蚀剂的组合物包括a）具有环胺和/或二胺的胺化合物，b）二醇醚化合物，c）缓蚀剂和d）极性溶剂。 组合物还包括剥离促进剂。 进一步公开了使用除去光致抗蚀剂的组合物制造阵列基板的方法。
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8.发明授权Composition for photoresist stripper and method of fabricating thin film transistor array substrate 有权用于光致抗蚀剂剥离剂的组合物和制造薄膜晶体管阵列基板的方法公开(公告)号：US07956393B2
公开(公告)日：2011-06-07
申请号：US12564019
申请日：2009-09-21
申请人： Jong-Hyun Choung , Bong-Kyun Kim , Hong-Sick Park , Sun-Young Hong , Young-Joo Choi , Byeong-Jin Lee , Nam-Seok Suh , Byung-Uk Kim , Suk-Il Yoon , Jong-Hyun Jeong , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang , Sun-Joo Park , Oh-Hwan Kweon
发明人： Jong-Hyun Choung , Bong-Kyun Kim , Hong-Sick Park , Sun-Young Hong , Young-Joo Choi , Byeong-Jin Lee , Nam-Seok Suh , Byung-Uk Kim , Suk-Il Yoon , Jong-Hyun Jeong , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang , Sun-Joo Park , Oh-Hwan Kweon
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： G03F7/425 , H01L27/124 , H01L27/1288
摘要： A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor.
摘要翻译： 根据一个或多个实施方案提供了用于光致抗蚀剂剥离剂的组合物和制造薄膜晶体管阵列基板的方法。 在一个或多个实施方案中，组合物包含约5-30重量％的链胺化合物，约0.5-10重量％的环胺化合物，约10-80重量％的二醇醚化合物，约5-30重量％ ％的蒸馏水和约0.1-5重量％的腐蚀抑制剂。
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9.发明申请COMPOSITION FOR REMOVING PHOTORESIST AND METHOD OF MANUFACTURING AN ARRAY SUBSTRATE USING THE SAME 有权用于去除光电元件的组合物和使用其制造阵列基板的方法公开(公告)号：US20090170037A1
公开(公告)日：2009-07-02
申请号：US12323649
申请日：2008-11-26
申请人： Jong-Hyun CHOUNG , Hong-Sick Park , Sun-Young Hong , Bong-Kyun Kim , Byeoung-Jin Lee , Byung-Uk Kim , Jong-Hyun Jeong , Suk-Il Yoon , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang
发明人： Jong-Hyun CHOUNG , Hong-Sick Park , Sun-Young Hong , Bong-Kyun Kim , Byeoung-Jin Lee , Byung-Uk Kim , Jong-Hyun Jeong , Suk-Il Yoon , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang
CPC分类号： G03F7/425
摘要： A composition for removing a photoresist includes a) an amine compound having a cyclic amine and/or a diamine, b) a glycol ether compound, c) a corrosion inhibitor and d) a polar solvent. The composition further includes a stripping promoter. Further disclosed is a method of manufacturing an array substrate using the composition for removing a photoresist.
摘要翻译： 用于除去光致抗蚀剂的组合物包括a）具有环胺和/或二胺的胺化合物，b）二醇醚化合物，c）缓蚀剂和d）极性溶剂。 组合物还包括剥离促进剂。 进一步公开了使用除去光致抗蚀剂的组合物制造阵列基板的方法。
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