公开(公告)号：US20130271150A1

公开(公告)日：2013-10-17

申请号：US13477099

申请日：2012-05-22

申请人： Hongbo Peng ,  Gustavo A. Stolovitzky ,  Wenjuan Zhu

发明人： Hongbo Peng ,  Gustavo A. Stolovitzky ,  Wenjuan Zhu

IPC分类号： G01N27/62 ,  B82Y15/00

CPC分类号： C12Q1/6869 ,  B82Y5/00 ,  G01N33/48721 ,  Y10T436/143333

摘要： A technique for a nanodevice is provided. A reservoir is separated into two parts by a membrane. A nanopore is formed through the membrane, and the nanopore connects the two parts of the reservoir. The nanopore and the two parts of the reservoir are filled with ionic buffer. The membrane includes a graphene layer and insulating layers. The graphene layer is wired to first and second metal pads to form a graphene transistor in which transistor current flowing through the graphene transistor is modulated by charges or dipoles passing through the nanopore.

摘要翻译： 提供了一种纳米设备的技术。 通过膜将储存器分成两部分。 通过膜形成纳米孔，并且纳米孔连接储层的两个部分。 纳米孔和储存器的两个部分填充有离子缓冲液。 膜包括石墨烯层和绝缘层。 石墨烯层连接到第一和第二金属焊盘以形成石墨烯晶体管，其中流过石墨烯晶体管的晶体管电流通过电荷或穿过纳米孔的偶极子来调制。

公开(公告)号：US09758821B2

公开(公告)日：2017-09-12

申请号：US13448509

申请日：2012-04-17

申请人： Hongbo Peng ,  Gustavo A. Stolovitzky ,  Wenjuan Zhu

发明人： Hongbo Peng ,  Gustavo A. Stolovitzky ,  Wenjuan Zhu

IPC分类号： G01N27/62 ,  C12Q1/68 ,  G01N33/487 ,  B82Y5/00

CPC分类号： C12Q1/6869 ,  B82Y5/00 ,  G01N33/48721 ,  Y10T436/143333

摘要： A technique for a nanodevice is provided. A reservoir is separated into two parts by a membrane. A nanopore is formed through the membrane, and the nanopore connects the two parts of the reservoir. The nanopore and the two parts of the reservoir are filled with ionic buffer. The membrane includes a graphene layer and insulating layers. The graphene layer is wired to first and second metal pads to form a graphene transistor in which transistor current flowing through the graphene transistor is modulated by charges passing through the nanopore.

公开(公告)号：US20130270521A1

公开(公告)日：2013-10-17

申请号：US13448509

申请日：2012-04-17

申请人： Hongbo Peng ,  Gustavo A. Stolovitzky ,  Wenjuan Zhu

发明人： Hongbo Peng ,  Gustavo A. Stolovitzky ,  Wenjuan Zhu

IPC分类号： H01L29/775 ,  B82Y99/00

CPC分类号： C12Q1/6869 ,  B82Y5/00 ,  G01N33/48721 ,  Y10T436/143333

摘要： A technique for a nanodevice is provided. A reservoir is separated into two parts by a membrane. A nanopore is formed through the membrane, and the nanopore connects the two parts of the reservoir. The nanopore and the two parts of the reservoir are filled with ionic buffer. The membrane includes a graphene layer and insulating layers. The graphene layer is wired to first and second metal pads to form a graphene transistor in which transistor current flowing through the graphene transistor is modulated by charges passing through the nanopore.

摘要翻译： 提供了一种纳米设备的技术。 通过膜将储存器分成两部分。 通过膜形成纳米孔，并且纳米孔连接储层的两个部分。 纳米孔和储存器的两个部分填充有离子缓冲液。 膜包括石墨烯层和绝缘层。 石墨烯层连接到第一和第二金属焊盘以形成石墨烯晶体管，其中流过石墨烯晶体管的晶体管电流通过穿过纳米孔的电荷进行调制。

公开(公告)号：US09765392B2

公开(公告)日：2017-09-19

申请号：US13477099

申请日：2012-05-22

申请人： Hongbo Peng ,  Gustavo A. Stolovitzky ,  Wenjuan Zhu

发明人： Hongbo Peng ,  Gustavo A. Stolovitzky ,  Wenjuan Zhu

IPC分类号： G01N27/62 ,  C12Q1/68 ,  G01N33/487 ,  B82Y5/00

CPC分类号： C12Q1/6869 ,  B82Y5/00 ,  G01N33/48721 ,  Y10T436/143333

摘要： A technique for a nanodevice is provided. A reservoir is separated into two parts by a membrane. A nanopore is formed through the membrane, and the nanopore connects the two parts of the reservoir. The nanopore and the two parts of the reservoir are filled with ionic buffer. The membrane includes a graphene layer and insulating layers. The graphene layer is wired to first and second metal pads to form a graphene transistor in which transistor current flowing through the graphene transistor is modulated by charges or dipoles passing through the nanopore.

公开(公告)号：US08564027B2

公开(公告)日：2013-10-22

申请号：US13359647

申请日：2012-01-27

申请人： Wenjuan Zhu

发明人： Wenjuan Zhu

IPC分类号： H01L29/84

CPC分类号： H01L29/78606 ,  B81B2201/038 ,  B81B2203/0127 ,  B81C1/00158 ,  B82Y30/00 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/66045 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78684

摘要： Semiconductor nano-devices, such as nano-probe and nano-knife devices, which are constructed using graphene films that are suspended between open cavities of a semiconductor structure. The suspended graphene films serve as electro-mechanical membranes that can be made very thin, from one or few atoms in thickness, to greatly improve the sensitivity and reliability of semiconductor nano-probe and nano-knife devices.

摘要翻译： 使用悬浮在半导体结构的开放腔之间的石墨烯膜构造的半导体纳米器件，例如纳米探针和纳米刀装置。 悬浮的石墨烯膜用作可以从一个或几个原子厚度制成非常薄的电子机械膜，以大大提高半导体纳米探针和纳米刀装置的灵敏度和可靠性。

公开(公告)号：US20120235118A1

公开(公告)日：2012-09-20

申请号：US13051707

申请日：2011-03-18

申请人： Phaedon Avouris ,  Deborah Neumayer ,  Wenjuan Zhu

发明人： Phaedon Avouris ,  Deborah Neumayer ,  Wenjuan Zhu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/518 ,  H01L29/1606 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78684

摘要： A semiconductor structure which includes a substrate; a graphene layer on the substrate; a source electrode and a drain electrode on the graphene layer, the source electrode and drain electrode being spaced apart by a predetermined dimension; a nitride layer on the graphene layer between the source electrode and drain electrode; and a gate electrode on the nitride layer, wherein the nitride layer is a gate dielectric for the gate electrode.

摘要翻译： 一种包括衬底的半导体结构; 基板上的石墨烯层; 在石墨烯层上的源电极和漏电极，源电极和漏极间隔开预定尺寸; 在源电极和漏电极之间的石墨烯层上的氮化物层; 以及氮化物层上的栅极电极，其中氮化物层是用于栅电极的栅极电介质。

公开(公告)号：US07528027B1

公开(公告)日：2009-05-05

申请号：US12054727

申请日：2008-03-25

申请人： Huilong Zhu ,  Mahender Kumar ,  Dan M. Mocuta ,  Ravikumar Ramachandran ,  Wenjuan Zhu

发明人： Huilong Zhu ,  Mahender Kumar ,  Dan M. Mocuta ,  Ravikumar Ramachandran ,  Wenjuan Zhu

IPC分类号： H01L21/336

CPC分类号： H01L29/78696 ,  H01L21/823807 ,  H01L21/82385 ,  H01L21/84 ,  H01L29/045 ,  H01L29/1037 ,  H01L29/66545 ,  H01L29/66621 ,  H01L29/66772

摘要： An SOI CMOS structure includes a v-shape trench in a pFet region. The v-shape trench has a surface in a (111) plane and extends into an SOI layer in the pFet region. A layer, such as a gate oxide or high-k material, is formed in the v-shape trench. Poly-Si is deposited on top of the layer.

摘要翻译： SOI CMOS结构包括pFet区域中的v形沟槽。 V形沟槽具有（111）面中的表面并延伸到pFet区域中的SOI层。 在V形沟槽中形成诸如栅极氧化物或高k材料的层。 多晶硅沉积在层的顶部。

公开(公告)号：US07504700B2

公开(公告)日：2009-03-17

申请号：US10907935

申请日：2005-04-21

申请人： Wenjuan Zhu ,  Michael P. Chudzik ,  Oleg Gluschenkov ,  Dae-Gyu Park ,  Akihisa Sekiguchi

发明人： Wenjuan Zhu ,  Michael P. Chudzik ,  Oleg Gluschenkov ,  Dae-Gyu Park ,  Akihisa Sekiguchi

IPC分类号： H01L27/088 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/28185 ,  H01L21/28097 ,  H01L21/28229 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/517

摘要： A semiconductor structure and method of forming the same, comprising forming a uniform buffer layer of diffusion-controlling stable material on top of a base gate dielectric layer, and then forming a uniform layer which contains a source of transitional metal atoms, and then annealing the structure to diffuse the transitional metal atoms from their source through the diffusion-controlling material and into the base gate dielectric layer.

摘要翻译： 一种半导体结构及其制造方法，包括在基极电介质层的顶部形成扩散控制稳定材料的均匀缓冲层，然后形成含有过渡金属原子源的均匀层，然后退火 结构将过渡金属原子从其源极扩散通过扩散控制材料并进入基极栅极电介质层。

公开(公告)号：US08901680B2

公开(公告)日：2014-12-02

申请号：US13445029

申请日：2012-04-12

申请人： Jin Cai ,  Yanqing Wu ,  Wenjuan Zhu

发明人： Jin Cai ,  Yanqing Wu ,  Wenjuan Zhu

IPC分类号： H01L29/06

CPC分类号： H01L29/1606 ,  G01L9/0042 ,  G01L9/0051 ,  H01L27/0802 ,  H01L29/0649

摘要： Semiconductor nano pressure sensor devices having graphene membrane suspended over cavities formed in a semiconductor substrate. A suspended graphene membrane serves as an active electro-mechanical membrane for sensing pressure, which can be made very thin, from about one atomic layer to about 10 atomic layers in thickness, to improve the sensitivity and reliability of a semiconductor pressure sensor device.

摘要翻译： 半导体纳米压力传感器装置具有悬浮在形成于半导体衬底中的空腔上的石墨烯膜。 悬浮的石墨烯膜用作用于感测压力（其可以制成非常薄）从约一个原子层到约10个原子层的活性电子机械膜，以提高半导体压力传感器装置的灵敏度和可靠性。

公开(公告)号：US08748871B2

公开(公告)日：2014-06-10

申请号：US13352737

申请日：2012-01-18

申请人： Phaedon Avouris ,  Josephine B. Chang ,  Wilfried E. Haensch ,  Fei Liu ,  Zihong Liu ,  Yanqing Wu ,  Wenjuan Zhu

发明人： Phaedon Avouris ,  Josephine B. Chang ,  Wilfried E. Haensch ,  Fei Liu ,  Zihong Liu ,  Yanqing Wu ,  Wenjuan Zhu

IPC分类号： H01L27/088

CPC分类号： H01L27/0688 ,  B82Y10/00 ,  H01L29/1606 ,  H01L29/78684

摘要： A three-dimensional integrated circuit includes a semiconductor device, an insulator formed on the semiconductor device, an interconnect formed in the insulator, and a graphene device formed on the insulator.

摘要翻译： 三维集成电路包括半导体器件，形成在半导体器件上的绝缘体，形成在绝缘体中的互连以及形成在绝缘体上的石墨烯器件。