公开(公告)号：US6113731A

公开(公告)日：2000-09-05

申请号：US735444

申请日：1997-01-02

申请人： Hongching Shan ,  Roger Lindley ,  Claes Bjorkman ,  Xue Yu Qian ,  Richard Plavidal ,  Bryan Pu ,  Ji Ding ,  Zongyu Li ,  Kuang-Han Ke ,  Michael Welch

发明人： Hongching Shan ,  Roger Lindley ,  Claes Bjorkman ,  Xue Yu Qian ,  Richard Plavidal ,  Bryan Pu ,  Ji Ding ,  Zongyu Li ,  Kuang-Han Ke ,  Michael Welch

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/00 ,  H01L21/02 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687 ,  C23F1/02

CPC分类号： H01L21/67069 ,  H01J37/32623 ,  H01J37/3266 ,  H01L21/68735

摘要： A plasma chamber having a magnet which produces a magnetic field such that, within a region parallel to and adjacent to the workpiece, the direction of the magnetic field is approximately the vector cross product of (i) the gradient of the magnitude of the magnetic field, and (ii) a vector extending perpendicularly from the workpiece surface toward the plasma. Alternatively, the plasma chamber includes a north magnetic pole and a south magnetic pole located at distinct azimuths around the periphery of the workpiece. The azimuth of the south magnetic pole relative to the north magnetic pole is clockwise around the central axis, and each magnetic pole faces a direction which is more toward than away from a central axis of the workpiece area. An additional aspect of the invention is a plasma chamber having a rotating magnetic field produced by electromagnets spaced around the periphery of the workpiece which receive successive fixed amounts of electrical current during successive time intervals. During each transition between the time intervals, the current supplied to each electromagnet is changed relatively slowly or relatively quickly according to whether the current change includes a change in polarity.

摘要翻译： 具有磁体的等离子体室产生磁场，使得在与工件平行并邻近工件的区域内，磁场的方向近似为（i）磁场强度梯度的矢量交叉积 ，和（ii）从工件表面朝向等离子体垂直延伸的矢量。 或者，等离子体室包括北磁极和位于工件周围的不同方位角处的南磁极。 南磁极相对于北磁极的方位角是围绕中心轴顺时针旋转的，每个磁极面对的方向远离工件区域的中心轴线。 本发明的另一方面是等离子体室，其具有由围绕工件周边间隔开的电磁体产生的旋转磁场，其在连续的时间间隔期间接收连续的固定量的电流。 在时间间隔期间的每个转换期间，根据电流变化是否包括极性变化，提供给每个电磁体的电流相对缓慢或相对较快地改变。

公开(公告)号：US6022446A

公开(公告)日：2000-02-08

申请号：US517178

申请日：1995-08-21

申请人： Hongching Shan ,  Bryan Pu ,  Ji Ding ,  Michael Welch

发明人： Hongching Shan ,  Bryan Pu ,  Ji Ding ,  Michael Welch

IPC分类号： H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/3266

摘要： The present invention is embodied in a plasma reactor for processing a workpiece such as a semiconductor wafer having an axis of symmetry, the reactor including a reactor chamber with a ceiling, a pedestal for supporting the workpiece within the chamber under the ceiling, a processing gas supply inlet into the chamber, an RF plasma power source coupled to the pedestal, and a magnetic field source near the ceiling providing a radially symmetrical magnetic field relative to the axis of symmetry within a portion of the chamber near the ceiling. The magnetic field source can include an electromagnet or plural magnets disposed over the ceiling in a radially symmetrical fashion with respect to the axis of symmetry. The plural magnets may be permanent magnets or electromagnets. The radially symmetrical magnetic field penetrates from the ceiling into the chamber to a shallow depth, and the height of the ceiling above the workpiece exceeds the depth.

摘要翻译： 本发明体现在用于处理诸如具有对称轴的半导体晶片的工件的等离子体反应器中，该反应器包括具有天花板的反应室，用于将工件支撑在天花板下方的室内的处理气体 供应入室的入口，耦合到基座的RF等离子体电源以及靠近天花板的磁场源，在靠近天花板的腔室的一部分内相对于对称轴提供径向对称的磁场。 磁场源可以包括相对于对称轴线以径向对称的方式设置在天花板上方的电磁体或多个磁体。 多个磁体可以是永磁体或电磁体。 径向对称的磁场从天花板穿透入室至浅深度，工件上方天花板的高度超过深度。

公开(公告)号：US5814563A

公开(公告)日：1998-09-29

申请号：US660966

申请日：1996-06-12

申请人： Ji Ding ,  Hongching Shan ,  Michael Welch

发明人： Ji Ding ,  Hongching Shan ,  Michael Welch

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/31116

摘要： A method of etching a dielectric layer (20) on a substrate (25) with high etching selectivity, low etch rate microloading, and high etch rates is described. In the method, a substrate (25) having a dielectric layer (20) with resist material thereon, is placed in a process zone (55), and a process gas is introduced into the process zone (55). The process gas comprises (i) fluorohydrocarbon gas for forming fluorine-containing etchant species capable of etching the dielectric layer (20), (ii) NH.sub.3 -generating gas having a liquefaction temperature L.sub.T in a range of temperatures .DELTA.T of from about -60.degree. C. to about 20.degree. C., and (iii) carbon-oxygen gas. The temperature of substrate (25) is maintained within about .+-.50.degree. C. of the liquefaction temperature L.sub.T of the NH.sub.3 -generating gas. A plasma is formed from the process gas to etch the dielectric layer (20) on the substrate (25). Preferably, the volumetric flow ratio of fluorohydrocarbon:NH.sub.3 -generating gas is from about 2.5:1 to about 7:1.

摘要翻译： 描述了以高蚀刻选择性，低蚀刻速率微加载和高蚀刻速率蚀刻衬底（25）上的介电层（20）的方法。 在该方法中，将具有其上具有抗蚀材料的电介质层（20）的基板（25）放置在处理区（55）中，并且处理气体被引入到处理区（55）中。 工艺气体包括（i）用于形成能够蚀刻介电层（20）的含氟蚀刻剂物质的氟代烃气体，（ii）在约-60℃的温度范围T T下具有液化温度LT的NH 3产生气体 约20℃，（iii）碳 - 氧气。 衬底（25）的温度保持在产生NH 3的气体的液化温度LT的约+/- 50℃内。 从处理气体形成等离子体，以蚀刻衬底（25）上的介质层（20）。 优选地，氟代烃：产生NH 3的气体的体积流量比为约2.5:1至约7:1。

公开(公告)号：US6076482A

公开(公告)日：2000-06-20

申请号：US937347

申请日：1997-09-20

申请人： Ji Ding ,  James Carducci ,  Hongching Shan ,  Siamak Salimian ,  Evans Lee ,  Paul E. Luscher ,  Mike Welch

发明人： Ji Ding ,  James Carducci ,  Hongching Shan ,  Siamak Salimian ,  Evans Lee ,  Paul E. Luscher ,  Mike Welch

IPC分类号： H01J37/32 ,  C23C16/00 ,  C23F1/02 ,  H01L21/302

CPC分类号： H01J37/32458 ,  H01J37/321

摘要： The invention contours the chamber surface overlying semiconductor wafer being processed (i.e., the chamber ceiling) in such a way as to promote or optimize the diffusion of plasma ions from their regions of origin to other regions which would otherwise have a relative paucity of plasma ions. This is accomplished by providing a greater chamber volume over those areas of the wafer otherwise experiencing a shortage of plasma ions and a smaller chamber volume over those areas of the wafer experiencing a plentitude of plasma ions (e.g, due to localized plasma generation occurring over the latter areas). Thus, the ceiling is contoured to promote a plasma ion diffusion which best compensates for localized or non-uniform patterns in plasma ion generation typical of an inductively coupled source (e.g., an overhead inductive antenna). Specifically, the invention provides a lesser ceiling height (relative to the wafer surface) over regions in which plasma ions are generated or tend to congregate and a greater ceiling height in other regions. More specifically, in the case of an overlying inductive antenna where plasma ion density tends to fall off toward the wafer periphery, the ceiling contour is such that the ceiling height increases radially, i.e., toward the wafer periphery. This promotes or increases plasma ion diffusion toward the wafer periphery as a function of the rate at which the ceiling height increases radially.

摘要翻译： 本发明轮廓地覆盖正在被处理的半导体晶片（即，室顶）上的腔表面，以促进或优化等离子体离子从其原始区域扩散到否则将具有相对低的等离子体离子的其它区域 。 这通过在晶片的那些区域上提供更大的室体积，否则经历等离子体离子的短缺，并且在经历等离子体离子的大量的晶片的那些区域（例如，由于在 后面的区域）。 因此，天花板的轮廓是促进等离子体离子扩散，其最好地补偿电感耦合源（例如，架空感应天线）典型的等离子体离子产生中的局部或非均匀图案。 具体地说，本发明提供了在其中产生等离子体离子或倾向聚集的区域和在其它区域中具有更大的天花板高度的较小的天花板高度（相对于晶片表面）。 更具体地说，在等离子体离子密度倾向于朝向晶片周边倾斜的上覆感应天线的情况下，天花板高度使天花板高度径向增加，即朝向晶片周边。 这促进或增加等离子体离子向晶片周边的扩散，这是天花板高度径向增加的速率的函数。

公开(公告)号：US06800213B2

公开(公告)日：2004-10-05

申请号：US10165249

申请日：2002-06-07

申请人： Ji Ding ,  Hidehiro Kojiri ,  Yoshio Ishikawa ,  Keiji Horioka ,  Ruiping Wang ,  Robert W. Wu ,  Hoiman (Raymond) Hung

发明人： Ji Ding ,  Hidehiro Kojiri ,  Yoshio Ishikawa ,  Keiji Horioka ,  Ruiping Wang ,  Robert W. Wu ,  Hoiman (Raymond) Hung

IPC分类号： H01L213065

CPC分类号： H01L21/31116

摘要： An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.

摘要翻译： 具有F / C比小于2，优选C4F6，含氧气体如O 2或CO，重质碳氟化合物或氢氟碳化合物的稀无机氟碳氟化合物和诸如Ar或Xe的稀有稀释气体的氧化物蚀刻配方 。 选择前三种气体的量，使得比值（FH）/（CO）至少为1.5且不大于2.或者，气体混合物可以包括重碳氟化合物，四氟化碳和稀释剂，其比例 的前两个选择的比例F / C在1.5和2之间。

公开(公告)号：US06432318B1

公开(公告)日：2002-08-13

申请号：US09506112

申请日：2000-02-17

申请人： Ji Ding ,  Hidehiro Kojiri ,  Yoshio Ishikawa ,  Keiji Horioka ,  Ruiping Wang ,  Robert W. Wu ,  Hoiman Hung

发明人： Ji Ding ,  Hidehiro Kojiri ,  Yoshio Ishikawa ,  Keiji Horioka ,  Ruiping Wang ,  Robert W. Wu ,  Hoiman Hung

IPC分类号： H01L213065

CPC分类号： H01L21/31116

摘要： An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2 such as C4F6 or C5F8, an oxygen-containing gas such as O2, CO or CO2, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.

摘要翻译： 氧化物蚀刻配方包括F / C比小于2的重氢无碳氟化合物，例如C 4 F 6或C 5 F 8，含氧气体如O 2，CO或CO 2，较轻碳氟化合物或氢氟烃，以及稀有稀释气体 作为Ar或Xe。 选择前三种气体的量，使得比值（FH）/（CO）至少为1.5且不大于2.或者，气体混合物可以包括重碳氟化合物，四氟化碳和稀释剂，其比例 的前两个被选择的比例F / C在1.5和2之间。