摘要:
A releasing and post-releasing method for making a micromirror device and a micromirror array device are disclosed herein. The releasing method removes the sacrificial materials in the micromirror and micromirror array so as to enabling movements of the movable elements in the micromirror and micromirror array device. The post-releasing method is applied to improve the performance and quality of the released micromirrors and micromirror array devices.
摘要:
A releasing and post-releasing method for making a micromirror device and a micromirror array device are disclosed herein. The releasing method removes the sacrificial materials in the micromirror and micromirror array so as to enabling movements of the movable elements in the micromirror and micromirror array device. The post-releasing method is applied to improve the performance and quality of the released micromirrors and micromirror array devices.
摘要:
The present disclosure includes devices and methods for operating resistance variable memory. One device embodiment includes an array of memory cells wherein a number of the cells are commonly coupled to a select line, the number cells including a number of data cells programmable within a number of target threshold resistance (Rt) ranges which correspond to a number of data states, and a number of reference cells interleaved with the data cells and programmable within the number of target Rt ranges. The aforementioned device embodiment also includes control circuitry coupled to the array and configured to sense a level associated with at least one data cell and at least one reference cell, and compare the sensed level associated with the at least one data cell with the sensed level associated with the at least one reference cell to determine a data state of the at least one data cell.
摘要:
Methods for measuring the resistance of multiple memory elements are disclosed. The memory elements may be multi-bit memory and through precise measurement of resistance of the multi-bit memory elements, determination of how many and which memory elements fall into specific memory ranges can be accomplished. Furthermore, storage and/or display of this information may allow for the creation of resistance distribution histograms for modeling of one or more memory arrays.
摘要:
The present disclosure includes devices, methods, and systems for programming memory, such as resistance variable memory. One embodiment can include an array of resistance variable memory cells, wherein the resistance variable memory cells are coupled to one or more data lines, a row decoder connected to a first side of the array, a column decoder connected to a second side of the array, wherein the second side is adjacent to the first side, a gap located adjacent to the row decoder and the column decoder, and clamp circuitry configured to control a reverse bias voltage associated with one or more unselected memory cells during a programming operation, wherein the clamp circuitry is located in the gap and is selectively coupled to the one or more data lines.
摘要:
The present disclosure includes devices and methods for operating resistance variable memory. One device embodiment includes an array of memory cells wherein a number of the cells are commonly coupled to a select line, the number cells including a number of data cells programmable within a number of target threshold resistance (Rt) ranges which correspond to a number of data states, and a number of reference cells interleaved with the data cells and programmable within the number of target Rt ranges. The aforementioned device embodiment also includes control circuitry coupled to the array and configured to sense a level associated with at least one data cell and at least one reference cell, and compare the sensed level associated with the at least one data cell with the sensed level associated with the at least one reference cell to determine a data state of the at least one data cell.
摘要:
The present disclosure includes devices, methods, and systems for programming memory, such as resistance variable memory. One embodiment can include an array of resistance variable memory cells, wherein the resistance variable memory cells are coupled to one or more data lines, a row decoder connected to a first side of the array, a column decoder connected to a second side of the array, wherein the second side is adjacent to the first side, a gap located adjacent to the row decoder and the column decoder, and clamp circuitry configured to control a reverse bias voltage associated with one or more unselected memory cells during a programming operation, wherein the clamp circuitry is located in the gap and is selectively coupled to the one or more data lines.
摘要:
The present disclosure includes devices, methods, and systems for temperature compensation in memory devices, such as resistance variable memory, among other types of memory. One or more embodiments can include a memory device including a table with an output that is used to create a multiplication factor for a current to compensate for temperature changes in the memory device, where the output depends on an operating temperature of the memory device and a difference in the current between a highest specified operating temperature and a lowest specified operating temperature of the memory device.
摘要:
The present disclosure includes devices, methods, and systems for sensing memory, such as resistance variable memory, among other types of memory. One or more embodiments can include a method for generating currents to be used in sensing a memory cell, the method including providing a number of initial currents, and generating a number of reference currents by summing particular combinations of the initial currents.
摘要:
A method of fabricating a support structure. In one embodiment, the method is comprised of forming a layer of material into the support structure. The layer of material is adapted to be attached onto a substrate surface. The method further comprises treating the layer of material. The present method is further comprised of etching said layer of material. The fabricated support structure is then implementable during assembly of a display device. In one embodiment, the support structure is attached to the substrate surface prior to the forming, treating, and etching of the layer of material. In another embodiment, the support structure is attached to the substrate surface subsequent to the forming, treating, and etching of the layer of material.