公开(公告)号：US20100219449A1

公开(公告)日：2010-09-02

申请号：US12395528

申请日：2009-02-27

申请人： Hooman Kazemi ,  Chanh Nguyen ,  Berinder Brar

发明人： Hooman Kazemi ,  Chanh Nguyen ,  Berinder Brar

IPC分类号： H01L31/0352 ,  H01L29/205 ,  H01L21/329

CPC分类号： H01L31/065 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/108 ,  H01L31/1085 ,  Y02E10/50

摘要： The disclosure relates to a zero-bias heterojunction diode detector with varying impedance. The detector includes a substrate supporting a Schottky structure and an Ohmic contact layer. A metallic contact layer is formed over the Ohmic layer. The Schottky structure comprises a plurality of barrier layers and each of the plurality of barriers layers includes a first material and a second material. In one embodiment, the composition percentage of the second material in each of the barrier layers increases among the plurality of barrier layers from the substrate to the metal layer in order to provide a graded periodicity for the Schottky structure.

摘要翻译： 本公开涉及具有变化阻抗的零偏置异质结二极管检测器。 检测器包括支撑肖特基结构和欧姆接触层的衬底。 在欧姆层上形成金属接触层。 肖特基结构包括多个阻挡层，并且多个阻挡层中的每一个包括第一材料和第二材料。 在一个实施方案中，为了提供肖特基结构的渐变周期性，从衬底到金属层的多个阻挡层中，每个势垒层中的第二材料的组成百分比增加。

公开(公告)号：US07989842B2

公开(公告)日：2011-08-02

申请号：US12395528

申请日：2009-02-27

申请人： Hooman Kazemi ,  Chanh Nguyen ,  Berinder Brar

发明人： Hooman Kazemi ,  Chanh Nguyen ,  Berinder Brar

IPC分类号： H01L31/0352 ,  H01L29/205 ,  H01L21/329

CPC分类号： H01L31/065 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/108 ,  H01L31/1085 ,  Y02E10/50

摘要： The disclosure relates to a zero-bias heterojunction diode detector with varying impedance. The detector includes a substrate supporting a Schottky structure and an Ohmic contact layer. A metallic contact layer is formed over the Ohmic layer. The Schottky structure comprises a plurality of barrier layers and each of the plurality of barriers layers includes a first material and a second material. In one embodiment, the composition percentage of the second material in each of the barrier layers increases among the plurality of barrier layers from the substrate to the metal layer in order to provide a graded periodicity for the Schottky structure.

摘要翻译： 本公开涉及具有变化阻抗的零偏置异质结二极管检测器。 检测器包括支撑肖特基结构和欧姆接触层的衬底。 在欧姆层上形成金属接触层。 肖特基结构包括多个阻挡层，并且多个阻挡层中的每一个包括第一材料和第二材料。 在一个实施方案中，为了提供肖特基结构的渐变周期性，从衬底到金属层的多个阻挡层中，每个势垒层中的第二材料的组成百分比增加。

公开(公告)号：US20070145417A1

公开(公告)日：2007-06-28

申请号：US11711340

申请日：2007-02-27

申请人： Berinder Brar ,  Wonill Ha ,  Mariam Sadaka ,  Chanh Nguyen

发明人： Berinder Brar ,  Wonill Ha ,  Mariam Sadaka ,  Chanh Nguyen

IPC分类号： H01L29/76

CPC分类号： H01L29/66462 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/7785

摘要： A semiconductor device having a lateral channel with contacts on opposing surfaces thereof. The semiconductor device includes a conductive substrate having a source contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes an isolation layer above the conductive substrate, a lateral channel above the isolation layer and a drain contact above the lateral channel. The semiconductor device further includes a gate located in a gate recess interposed between the lateral channel and the drain contact and a drain formed by at least one source/drain contact layer interposed between the lateral channel and the drain contact. The drain is offset on one side of the gate by a gate-to-drain separation distance. The semiconductor device still further includes an interconnect that connects the lateral channel to the conductive substrate operable to provide a low resistance coupling between the source contact and the lateral channel.

摘要翻译： 一种具有在其相对表面上具有触点的横向通道的半导体器件。 半导体器件包括具有覆盖其底表面的大部分的源极接触的导电基底。 半导体器件还包括在导电衬底之上的隔离层，隔离层上方的横向沟道和横向沟道上方的漏极接触。 所述半导体器件还包括位于所述横向沟道和所述漏极接触之间的栅极凹槽中的栅极和由介于所述侧向沟道和所述漏极接触之间的至少一个源极/漏极接触层形成的漏极。 漏极在栅极到漏极间隔距离的一侧偏移。 半导体器件还包括将横向沟道连接到导电衬底的互连，其可操作以在源极接触和侧向通道之间提供低电阻耦合。

公开(公告)号：US20080054304A1

公开(公告)日：2008-03-06

申请号：US11866259

申请日：2007-10-02

申请人： Mariam Sadaka ,  Berinder Brar ,  Wonill Ha ,  Chanh Nguyen

发明人： Mariam Sadaka ,  Berinder Brar ,  Wonill Ha ,  Chanh Nguyen

IPC分类号： H01L31/0328

CPC分类号： H01L29/7783 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/0727 ,  H01L29/66462 ,  H01L29/872

摘要： A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.

公开(公告)号：US20080048174A1

公开(公告)日：2008-02-28

申请号：US11866270

申请日：2007-10-02

申请人： Mariam Sadaka ,  Berinder Brar ,  Wonill Ha ,  Chanh Nguyen

发明人： Mariam Sadaka ,  Berinder Brar ,  Wonill Ha ,  Chanh Nguyen

IPC分类号： H01L29/15

CPC分类号： H01L29/7783 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/0727 ,  H01L29/66462 ,  H01L29/872

摘要： A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.

摘要翻译： 包括横向场效应晶体管和肖特基二极管的半导体器件及其形成方法。 在一个实施例中，横向场效应晶体管包括缓冲层，该缓冲层具有覆盖其底表面的大部分的接触，缓冲层上方的横向通道，横向通道上方的另一接触件以及将侧向通道 到缓冲层。 半导体器件还包括并联耦合到横向场效应晶体管的肖特基二极管，该晶体管包括由介于缓冲层和横向沟道之间的另一个缓冲层形成的阴极，插入另一个缓冲层和另一个触点之间的肖特基互连， 以及形成在所述肖特基互连件的表面上的阳极，其可操作以将所述阳极连接到所述另一个触点。 半导体器件还可以包括插入在缓冲层和横向沟道之间的隔离层。

公开(公告)号：US20080048173A1

公开(公告)日：2008-02-28

申请号：US11866249

申请日：2007-10-02

申请人： Mariam Sadaka ,  Berinder Brar ,  Wonill Ha ,  Chanh Nguyen

发明人： Mariam Sadaka ,  Berinder Brar ,  Wonill Ha ,  Chanh Nguyen

IPC分类号： H01L29/15

CPC分类号： H01L27/0605 ,  H01L27/0629 ,  H01L27/0727 ,  H01L29/20 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/872

摘要： A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.

公开(公告)号：US20070187717A1

公开(公告)日：2007-08-16

申请号：US11732301

申请日：2007-04-03

申请人： Mariam Sadaka ,  Berinder Brar ,  Wonill Ha ,  Chanh Nguyen

发明人： Mariam Sadaka ,  Berinder Brar ,  Wonill Ha ,  Chanh Nguyen

IPC分类号： H01L31/00 ,  H01L21/336

CPC分类号： H01L29/1029 ,  H01L21/6835 ,  H01L29/1083 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7785 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381

摘要： A semiconductor device and method of forming the same. The semiconductor device includes an epitaxially grown and conductive buffer layer having a contact covering a substantial portion of a bottom surface thereof and a lateral channel above the buffer layer. The semiconductor device also includes another contact above the lateral channel and an interconnect that connects the lateral channel to the buffer layer, operable to provide a low resistance coupling between the contact and the lateral channel.

摘要翻译： 一种半导体器件及其制造方法。 半导体器件包括外延生长和导电缓冲层，其具有覆盖其底表面的大部分的接触和缓冲层上方的横向通道。 半导体器件还包括在横向通道上方的另一接触件和将横向通道连接到缓冲层的互连件，可操作以在触头和横向通道之间提供低电阻耦合。

公开(公告)号：US08996536B2

公开(公告)日：2015-03-31

申请号：US13237844

申请日：2011-09-20

申请人： Alejandro Crosa ,  Esteban Kozak ,  Yasuhiro Matsuda ,  Xiaoyang Gu ,  Hao Yan ,  John Wang ,  Chanh Nguyen

发明人： Alejandro Crosa ,  Esteban Kozak ,  Yasuhiro Matsuda ,  Xiaoyang Gu ,  Hao Yan ,  John Wang ,  Chanh Nguyen

IPC分类号： G06F17/30

CPC分类号： G06Q50/01 ,  G06F17/30867 ,  G06Q10/00

摘要： A network update interface is presented to a user on a network to display network updates from other users of a mutual social-networking site. The network updates shared by the other users are gathered in a stream and supplied to a facet-filtering system including a network update interface. The user controls the display of certain network update items according to facet-filter characteristics enabled in facet-filter selection panels in the network update interface. The facet-filter characteristics are used by a facet filter to select certain network updates for display to the user in the network update interface. Trending links to further articles with content corresponding to the facet-filter characteristics are displayed to the user according to greatest popularity among the other users. Links to the profiles of the users sharing the articles are also provided in the network update interface.

摘要翻译： 向网络上的用户呈现网络更新界面以显示来自相互社交网站的其他用户的网络更新。 由其他用户共享的网络更新集中在一个流中，并提供给包括网络更新界面的构面过滤系统。 用户根据网络更新界面中的小平面过滤器选择面板中启用的特征滤波器特征来控制某些网络更新项目的显示。 小平面滤波器特征由小平面滤波器用于选择某些网络更新以在网络更新界面中向用户显示。 根据其他用户的最大的普及程度，向用户显示与具有相关特征的内容对应的其他文章的趋势链接。 在网络更新界面中还提供了共享文章用户的配置文件的链接。

公开(公告)号：US5663583A

公开(公告)日：1997-09-02

申请号：US466157

申请日：1995-06-06

申请人： Mehran Matloubian ,  Takyiu Liu ,  Chanh Nguyen

发明人： Mehran Matloubian ,  Takyiu Liu ,  Chanh Nguyen

IPC分类号： H01L21/205 ,  H01L21/338 ,  H01L29/201 ,  H01L29/778 ,  H01L29/812 ,  H01L31/0328 ,  H01L21/20

CPC分类号： H01L29/7783 ,  H01L29/201

摘要： An epitaxial structure and method of manufacture for a field-effect transistor capable of low-noise and power applications. Preferably, the epitaxial structure includes an N-type barrier layer comprising a wide-gap semiconductor material having the formula Al.sub.1-y Ga.sub.y P.sub.0.71+z Sb.sub.0.29-z.

摘要翻译： 一种能够实现低噪声和功率应用的场效应晶体管的外延结构和制造方法。 优选地，外延结构包括N型阻挡层，其包含具有式Al1-yGayP0.71 + zSb0.29-z的宽间隙半导体材料。

公开(公告)号：US07170105B1

公开(公告)日：2007-01-30

申请号：US10970359

申请日：2004-10-20

申请人： Joel N. Schulman ,  David H. Chow ,  Chanh Nguyen

发明人： Joel N. Schulman ,  David H. Chow ,  Chanh Nguyen

IPC分类号： H01L29/32 ,  H01L31/0336 ,  H01L31/072 ,  H01S5/00

CPC分类号： H01L29/88 ,  H01L29/205 ,  H01L29/885

摘要： A semiconductor device exhibiting interband tunneling with a first layer with a first conduction band edge with an energy above a first valence band edge, with the difference a first band-gap. A second layer with second conduction band edge with an energy above a second valence band edge, with the difference a second band-gap, and the second layer formed permitting electron carrier tunneling transport. The second layer is between the first and a third layer, with the difference between the third valence band edge and the third conduction band edge a third band-gap. A Fermi level is nearer the first conduction band edge than the first valence band edge. The second valence band edge is beneath the first conduction band edge. The second conduction band edge is above the third valence band edge. The Fermi level is nearer the third valence band edge than to the third conduction band edge.

摘要翻译： 一种半导体器件，其具有与具有第一价带边缘以上的能量的第一导带边缘的第一层的带间隧穿，其差异为第一带隙。 具有第二导带边缘的第二层，其具有高于第二价带边缘的能量，所述差异为第二带隙，并且所述第二层形成为允许电子载流子隧道输送。 第二层在第一和第三层之间，第三价带边缘和第三导带边缘之间的差异是第三带隙。 费米能级比第一价带边缘更接近第一导带边缘。 第二价带边缘在第一导带边缘之下。 第二导带边缘高于第三价带边缘。 费米能级比第三导带边缘更接近第三价带边缘。