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    Alloy for heat dissipation of semiconductor device and semiconductor module, and method of manufacturing alloy
    3.
    发明授权
    Alloy for heat dissipation of semiconductor device and semiconductor module, and method of manufacturing alloy 有权
    用于半导体器件和半导体模块的散热的合金以及合金的制造方法

    公开(公告)号：US07955448B2

    公开(公告)日：2011-06-07

    申请号：US11886973

    申请日：2005-10-05

    申请人： Hoshiaki Terao ,  Hideaki Kobiki ,  Satoshi Uenosono

    发明人： Hoshiaki Terao ,  Hideaki Kobiki ,  Satoshi Uenosono

    IPC分类号： C22C27/06 ,  C22C30/02

    CPC分类号： C22C9/00 ,  B22F2003/248 ,  B22F2998/10 ,  C22C1/04 ,  C22C1/0425 ,  C22C27/06 ,  C22C30/02 ,  C22F1/08 ,  C22F1/11 ,  H01L23/3733 ,  H01L23/3736 ,  H01L2924/0002 ,  B22F1/0003 ,  B22F3/10 ,  B22F3/26 ,  B22F3/24 ,  H01L2924/00

    摘要： It is an object to provide an inexpensive alloy for heat dissipation having a small thermal expansion coefficient as known composite materials, a large thermal conductivity as pure copper, and excellent machinability and a method for manufacturing the alloy. In particular, since various shapes are required of the alloy for heat dissipation, a manufacturing method by using a powder metallurgy method capable of supplying alloys for heat dissipation, the manufacturing costs of which are low and which take on various shapes, is provided besides the known melting method. The alloy according to the present invention is a Cu—Cr alloy, which is composed of 0.3 percent by mass or more, and 80 percent by mass or less of Cr and the remainder of Cu and incidental impurities and which has a structure in which particulate Cr phases having a major axis of 100 nm or less and an aspect ratio of less than 10 are precipitated at a density of 20 particles/μm2 in a Cu matrix except Cr phases of more than 100 nm.

    摘要翻译： 本发明的目的是提供一种廉价的散热合金，其具有作为已知的复合材料的热膨胀系数小，作为纯铜的大的热导率，以及优异的机械加工性以及该合金的制造方法。 特别是，由于需要散热用合金的各种形状，因此除了制造成本低，采取各种形状以外，还提供了能够提供散热用合金的粉末冶金法的制造方法 已知的熔化方法。 根据本发明的合金是Cu-Cr合金，其由0.3质量％以上，80质量％以下的Cr和余量的Cu和附带的杂质构成，并且具有以下结构：颗粒 具有100nm以下的长轴和小于10的长宽比的Cr相在除了大于100nm的Cr相以外的Cu基体中以20个/μm2的密度析出。

    Alloy for heat dissipation of semiconductor device and semiconductor module, and method of manufacturing alloy
    5.
    发明申请
    Alloy for heat dissipation of semiconductor device and semiconductor module, and method of manufacturing alloy 有权
    用于半导体器件和半导体模块的散热的合金以及合金的制造方法

    公开(公告)号：US20090053090A1

    公开(公告)日：2009-02-26

    申请号：US11886973

    申请日：2005-10-05

    申请人： Hoshiaki Terao

    发明人： Hoshiaki Terao

    IPC分类号： B22F3/24 ,  C22C27/06 ,  C22C9/00 ,  C22C30/02 ,  C22F1/08 ,  C22F1/11

    CPC分类号： C22C9/00 ,  B22F2003/248 ,  B22F2998/10 ,  C22C1/04 ,  C22C1/0425 ,  C22C27/06 ,  C22C30/02 ,  C22F1/08 ,  C22F1/11 ,  H01L23/3733 ,  H01L23/3736 ,  H01L2924/0002 ,  B22F1/0003 ,  B22F3/10 ,  B22F3/26 ,  B22F3/24 ,  H01L2924/00

    摘要： It is an object to provide an inexpensive alloy for heat dissipation having a small thermal expansion coefficient as known composite materials, a large thermal conductivity as pure copper, and excellent machinability and a method for manufacturing the alloy. In particular, since various shapes are required of the alloy for heat dissipation, a manufacturing method by using a powder metallurgy method capable of supplying alloys for heat dissipation, the manufacturing costs of which are low and which take on various shapes, is provided besides the known melting method. The alloy according to the present invention is a Cu—Cr alloy, which is composed of 0.3 percent by mass or more, and 80 percent by mass or less of Cr and the remainder of Cu and incidental impurities and which has a structure in which particulate Cr phases having a major axis of 100 nm or less and an aspect ratio of less than 10 are precipitated at a density of 20 particles/μm2 in a Cu matrix except Cr phases of 100 nm or more.

    摘要翻译： 本发明的目的是提供一种廉价的散热合金，其具有作为已知的复合材料的热膨胀系数小，作为纯铜的大的热导率，以及优异的机械加工性以及该合金的制造方法。 特别是，由于需要散热用合金的各种形状，因此除了制造成本低，采取各种形状以外，还提供了能够提供散热用合金的粉末冶金法的制造方法 已知的熔化方法。 根据本发明的合金是Cu-Cr合金，其由0.3质量％以上，80质量％以下的Cr和余量的Cu和附带的杂质组成，并且具有以下结构：颗粒 具有100nm或更小的长轴和小于10的长宽比的Cr相在除100nm以上的Cr相外的Cu基体中以20个/ m 2的密度析出。