MULTI-RANK MEMORY MODULE THAT EMULATES A MEMORY MODULE HAVING A DIFFERENT NUMBER OF RANKS
    1.
    发明申请
    MULTI-RANK MEMORY MODULE THAT EMULATES A MEMORY MODULE HAVING A DIFFERENT NUMBER OF RANKS 有权
    模拟具有不同数量排名的记忆模块的多RAN记忆模块

    公开(公告)号:US20130036264A1

    公开(公告)日:2013-02-07

    申请号:US13568694

    申请日:2012-08-07

    IPC分类号: G06F12/00

    摘要: A transparent four rank memory module has a front side and a back side. The front side has a third memory rank stacked on a first memory rank. The back side has a fourth memory rank stacked on a second memory rank. An emulator coupled to the memory module activates and controls one individual memory rank from either the first memory rank, the second memory rank, the third memory rank, or the fourth memory rank based on the signals received from a memory controller.

    摘要翻译: 透明的四级存储器模块具有前侧和后侧。 前侧具有堆叠在第一存储器等级上的第三存储器级。 背面具有堆叠在第二存储器等级上的第四存储器级。 耦合到存储器模块的仿真器基于从存储器控制器接收的信号来激活并控制来自第一存储器级,第二存储器级,第三存储器级或第四存储器级的一个单独的存储器级。

    Multi-rank memory module that emulates a memory module having a different number of ranks
    2.
    发明授权
    Multi-rank memory module that emulates a memory module having a different number of ranks 有权
    模拟具有不同数量的存储器模块的多级存储器模块

    公开(公告)号:US08990489B2

    公开(公告)日:2015-03-24

    申请号:US13568694

    申请日:2012-08-07

    摘要: A transparent four rank memory module has a front side and a back side. The front side has a third memory rank stacked on a first memory rank. The back side has a fourth memory rank stacked on a second memory rank. An emulator coupled to the memory module activates and controls one individual memory rank from either the first memory rank, the second memory rank, the third memory rank, or the fourth memory rank based on the signals received from a memory controller.

    摘要翻译: 透明的四级存储器模块具有前侧和后侧。 前侧具有堆叠在第一存储器等级上的第三存储器级。 背面具有堆叠在第二存储器等级上的第四存储器级。 耦合到存储器模块的仿真器基于从存储器控制器接收的信号来激活并控制来自第一存储器级,第二存储器级,第三存储器级或第四存储器级的一个单独的存储器级。

    MULTI-RANK MEMORY MODULE THAT EMULATES A MEMORY MODULE HAVING A DIFFERENT NUMBER OF RANKS
    3.
    发明申请
    MULTI-RANK MEMORY MODULE THAT EMULATES A MEMORY MODULE HAVING A DIFFERENT NUMBER OF RANKS 审中-公开
    模拟具有不同数量排名的记忆模块的多RAN记忆模块

    公开(公告)号:US20110125966A1

    公开(公告)日:2011-05-26

    申请号:US12902073

    申请日:2010-10-11

    IPC分类号: G06F12/00

    摘要: A transparent four rank memory module has a front side and a back side. The front side has a third memory rank stacked on a first memory rank. The back side has a fourth memory rank stacked on a second memory rank. An emulator coupled to the memory module activates and controls one individual memory rank from either the first memory rank, the second memory rank, the third memory rank, or the fourth memory rank based on the signals received from a memory controller.

    摘要翻译: 透明的四级存储器模块具有前侧和后侧。 前侧具有堆叠在第一存储器等级上的第三存储器级。 背面具有堆叠在第二存储器等级上的第四存储器级。 耦合到存储器模块的仿真器基于从存储器控制器接收的信号来激活并控制来自第一存储器级,第二存储器级,第三存储器级或第四存储器级的一个单独的存储器级。

    Multi-channel memory modules for computing devices
    5.
    发明申请
    Multi-channel memory modules for computing devices 审中-公开
    用于计算设备的多通道内存模块

    公开(公告)号:US20080123305A1

    公开(公告)日:2008-05-29

    申请号:US11605809

    申请日:2006-11-28

    IPC分类号: H05K1/14

    摘要: A dual-channel memory module for use in computing devices is disclosed. The memory module can include a substrate having a base portion, a first connector portion, and a second connector portion spaced apart and electrically insulated from the first connector portion. A first set of memory devices is disposed on the base portion and in electrical communication with the first connector portion, and a second set of memory devices is disposed on the base portion and in electrical communication with the second connector portion. The first and second sets of memory devices are independent of each other.

    摘要翻译: 公开了一种用于计算设备的双通道内存模块。 存储器模块可以包括具有基座部分,第一连接器部分和与第一连接器部分间隔开并与之电绝缘的第二连接器部分的基板。 第一组存储器件设置在基座部分上并且与第一连接器部分电连通,并且第二组存储器件设置在基座部分上并与第二连接器部分电连通。 第一组和第二组存储器件彼此独立。

    Multi-rank memory module that emulates a memory module having a different number of ranks
    6.
    发明授权
    Multi-rank memory module that emulates a memory module having a different number of ranks 有权
    模拟具有不同数量的存储器模块的多级存储器模块

    公开(公告)号:US08250295B2

    公开(公告)日:2012-08-21

    申请号:US10752151

    申请日:2004-01-05

    IPC分类号: G06F12/00

    摘要: A transparent four rank memory module has a front side and a back side. The front side has a third memory rank stacked on a first memory rank. The back side has a fourth memory rank stacked on a second memory rank. An emulator coupled to the memory module activates and controls one individual memory rank from either the first memory rank, the second memory rank, the third memory rank, or the fourth memory rank based on the signals received from a memory controller.

    摘要翻译: 透明的四级存储器模块具有前侧和后侧。 前侧具有堆叠在第一存储器等级上的第三存储器级。 背面具有堆叠在第二存储器等级上的第四存储器级。 耦合到存储器模块的仿真器基于从存储器控制器接收的信号来激活并控制来自第一存储器级,第二存储器级,第三存储器级或第四存储器级的一个单独的存储器级。

    Transparent four rank memory module for standard two rank sub-systems
    7.
    发明申请
    Transparent four rank memory module for standard two rank sub-systems 有权
    用于标准两级子系统的透明四级存储器模块

    公开(公告)号:US20060117152A1

    公开(公告)日:2006-06-01

    申请号:US10752151

    申请日:2004-01-05

    IPC分类号: G06F13/00

    摘要: A transparent four rank memory module has a front side and a back side. The front side has a third memory rank stacked on a first memory rank. The back side has a fourth memory rank stacked on a second memory rank. An emulator coupled to the memory module activates and controls one individual memory rank from either the first memory rank, the second memory rank, the third memory rank, or the fourth memory rank based on the signals received from a memory controller.

    摘要翻译: 透明的四级存储器模块具有前侧和后侧。 前侧具有堆叠在第一存储器等级上的第三存储器级。 背面具有堆叠在第二存储器等级上的第四存储器级。 耦合到存储器模块的仿真器基于从存储器控制器接收的信号来激活并控制来自第一存储器级,第二存储器级,第三存储器级或第四存储器级的一个单独的存储器级。

    System and method for translation of SDRAM and DDR signals
    8.
    发明授权
    System and method for translation of SDRAM and DDR signals 有权
    用于SDRAM和DDR信号转换的系统和方法

    公开(公告)号:US06707756B2

    公开(公告)日:2004-03-16

    申请号:US10097687

    申请日:2002-03-12

    申请人: Hossein Amidi

    发明人: Hossein Amidi

    IPC分类号: G11C800

    摘要: A circuit for converting signals between a memory interface and a memory array is disclosed. The memory interface is not the same type as the memory array such that the signals between the interface and the array need to be synchronized and translated. The circuit includes an interface converter for shifting the logic levels of the signals between the memory interface and the memory array. Furthermore, the circuit has a translation block for translating and synchronizing the signals. In this respect signals between the memory array and the memory interface are synchronized and translated such that the memory array can be used with a memory interface of a different type.

    摘要翻译: 公开了一种用于在存储器接口和存储器阵列之间转换信号的电路。 存储器接口与存储器阵列的类型不同,使得接口和阵列之间的信号需要被同步和转换。 该电路包括用于在存储器接口和存储器阵列之间移位信号的逻辑电平的接口转换器。 此外,电路具有用于平移和同步信号的平移块。 在这方面,存储器阵列和存储器接口之间的信号被同步和转换,使得存储器阵列可以与不同类型的存储器接口一起使用。

    Method and system for testing memory modules
    9.
    发明申请
    Method and system for testing memory modules 失效
    内存模块测试方法和系统

    公开(公告)号:US20080022166A1

    公开(公告)日:2008-01-24

    申请号:US11480073

    申请日:2006-06-29

    IPC分类号: G11C29/00

    摘要: A method and system for testing memory modules is disclosed. The system includes a memory module and a connector configured to receive the module. The memory module is configured to operate in two modes: In the first operation mode the module uses a frequency between a low frequency and a high frequency. In the second operation mode, the module uses a frequency lower than the lower frequency. A control circuit is coupled to the connector. The control circuit is configured to apply a control signal to the circuit module when the circuit module is received in the connector. When the circuit module is received in the connector, the control signal is applied. This applied control signal causes the module to operate in the second operation mode.

    摘要翻译: 公开了一种用于测试存储器模块的方法和系统。 该系统包括存储器模块和被配置为接收模块的连接器。 存储器模块被配置为以两种模式操作:在第一操作模式中,模块使用低频和高频之间的频率。 在第二种操作模式下,模块使用低于较低频率的频率。 控制电路耦合到连接器。 控制电路被配置为当电路模块被接收在连接器中时,向电路模块施加控制信号。 当电路模块接收在连接器中时,应用控制信号。 该应用的控制信号使得模块在第二操作模式下操作。

    Memory modules with error detection and correction
    10.
    发明申请
    Memory modules with error detection and correction 有权
    具有错误检测和校正的内存模块

    公开(公告)号:US20080155378A1

    公开(公告)日:2008-06-26

    申请号:US11643100

    申请日:2006-12-21

    申请人: Hossein Amidi

    发明人: Hossein Amidi

    IPC分类号: H03M13/00

    摘要: A memory module having error detection and correction mechanisms is disclosed. The memory module includes a plurality of memory devices arranged in an array and a buffer device connected to the memory devices. The buffer device includes a register module for synchronizing and buffering a plurality of input signals to the memory devices, an error detection module for detecting errors of the input signals, and a transmission memory for storing a copy of the input signals and transmitting the stored copy of the input signals as an output signal.

    摘要翻译: 公开了一种具有错误检测和校正机制的存储器模块。 存储器模块包括布置在阵列中的多个存储器件和连接到存储器件的缓冲器件。 该缓冲装置包括用于同步并缓冲多个输入信号到存储装置的寄存器模块,用于检测输入信号的错误的错误检测模块,以及用于存储输入信号的副本并发送存储的副本 的输入信号作为输出信号。