公开(公告)号：US20070013018A1

公开(公告)日：2007-01-18

申请号：US11526722

申请日：2006-09-26

申请人： Howard Rhodes ,  Edward Heitzeberg

发明人： Howard Rhodes ,  Edward Heitzeberg

IPC分类号： H01L31/0203

CPC分类号： H01L31/0203 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

摘要： An imaging chip is packaged in transparent injection molded material. The chip may have photosensitive elements arranged in a two-dimensional array on semiconductor material. Each element corresponds to a pixel of an image. The package may be formed of epoxy resin. In one aspect of the invention, the transparent plastic material provides a color filter. Second and third packages with complementary color filters may be used to provide signals for a color imaging system. In another aspect of the invention, a lens is integrated into the plastic package. In another aspect of the invention, a semiconductor chip is applied to a pre-formed plastic package by bump bonding.

公开(公告)号：US07750382B2

公开(公告)日：2010-07-06

申请号：US12324083

申请日：2008-11-26

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035272

摘要： A deep implanted region of a first conductivity type located below a transistor array of a pixel sensor cell and adjacent a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The deep implanted region reduces surface leakage and dark current and increases the capacitance of the photodiode by acting as a reflective barrier to photo-generated charge in the doped region of the second conductivity type of the photodiode. The deep implanted region also provides improved charge transfer from the charge collection region of the photodiode to a floating diffusion region adjacent the gate of the transfer transistor.

摘要翻译： 公开了一种位于像素传感器单元的晶体管阵列下方并且与像素传感器单元的第二导电类型的光电二极管的掺杂区相邻的第一导电类型的深度注入区域。 深注入区域减小了表面泄漏和暗电流，并且通过在第二导电类型的光电二极管的掺杂区域中作为光生电荷的反射阻挡来增加光电二极管的电容。 深注入区域还提供从光电二极管的电荷收集区域到与传输晶体管的栅极相邻的浮动扩散区域的改进的电荷转移。

公开(公告)号：US20090179296A1

公开(公告)日：2009-07-16

申请号：US12349968

申请日：2009-01-07

申请人： Howard Rhodes ,  Jeff McKee

发明人： Howard Rhodes ,  Jeff McKee

IPC分类号： H01L31/0256

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14609

摘要： A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.

摘要翻译： 公开了连接到CMOS成像器的各种光敏元件和/或电元件的电荷存储电容器以及形成方法。 电荷存储电容器可以完全在CMOS成像器的场氧化物区域上形成，整个在像素传感器单元的有效区域上，或部分地在场氧化物区域上，部分地在像素传感器单元的有源像素区域上形成。

公开(公告)号：US20090078978A1

公开(公告)日：2009-03-26

申请号：US12324083

申请日：2008-11-26

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035272

摘要： A deep implanted region of a first conductivity type located below a transistor array of a pixel sensor cell and adjacent a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The deep implanted region reduces surface leakage and dark current and increases the capacitance of the photodiode by acting as a reflective barrier to photo-generated charge in the doped region of the second conductivity type of the photodiode. The deep implanted region also provides improved charge transfer from the charge collection region of the photodiode to a floating diffusion region adjacent the gate of the transfer transistor.

摘要翻译： 公开了一种位于像素传感器单元的晶体管阵列下方并且与像素传感器单元的第二导电类型的光电二极管的掺杂区相邻的第一导电类型的深度注入区域。 深注入区域减小了表面泄漏和暗电流，并且通过在第二导电类型的光电二极管的掺杂区域中作为光生电荷的反射阻挡来增加光电二极管的电容。 深注入区域还提供从光电二极管的电荷收集区域到与传输晶体管的栅极相邻的浮动扩散区域的改进的电荷转移。

公开(公告)号：US07470560B2

公开(公告)日：2008-12-30

申请号：US11434767

申请日：2006-05-17

申请人： Howard Rhodes ,  Chandra Mouli

发明人： Howard Rhodes ,  Chandra Mouli

IPC分类号： H01L21/00

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035272

摘要： A deep implanted region of a first conductivity type located below a transistor array of a pixel sensor cell and adjacent a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The deep implanted region reduces surface leakage and dark current and increases the capacitance of the photodiode by acting as a reflective barrier to photo-generated charge in the doped region of the second conductivity type of the photodiode. The deep implanted region also provides improved charge transfer from the charge collection region of the photodiode to a floating diffusion region adjacent the gate of the transfer transistor.

摘要翻译： 公开了一种位于像素传感器单元的晶体管阵列下方并且与像素传感器单元的第二导电类型的光电二极管的掺杂区相邻的第一导电类型的深度注入区域。 深注入区域减小了表面泄漏和暗电流，并且通过在第二导电类型的光电二极管的掺杂区域中作为光生电荷的反射阻挡来增加光电二极管的电容。 深注入区域还提供从光电二极管的电荷收集区域到与传输晶体管的栅极相邻的浮动扩散区域的改进的电荷转移。

公开(公告)号：US07303938B2

公开(公告)日：2007-12-04

申请号：US10771290

申请日：2004-02-05

申请人： Chandra Mouli ,  Howard Rhodes

发明人： Chandra Mouli ,  Howard Rhodes

IPC分类号： H01L29/762 ,  H01L21/339

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： Isolation methods and devices for isolating pixels of an image sensor pixel. The isolation structure and methods include forming a biased gate over a field isolation region and adjacent a pixel of an image sensor. The isolation methods also include forming an isolation gate over substantial portions of a field isolation region to isolate pixels in an array of pixels.

摘要翻译： 用于隔离图像传感器像素的像素的隔离方法和设备。 隔离结构和方法包括在场隔离区域上形成偏置栅极并邻近图像传感器的像素。 隔离方法还包括在场隔离区域的大部分上形成隔离栅极以隔离像素阵列中的像素。

公开(公告)号：US20070205447A1

公开(公告)日：2007-09-06

申请号：US11797756

申请日：2007-05-07

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/376

摘要： An imaging device formed as a CMOS semiconductor integrated circuit having two adjacent pixels in a row connected to a common column line. By having adjacent pixels of a row share column lines, the CMOS imager circuit eliminates half the column lines of a traditional imager allowing the fabrication of a smaller imager. The imaging device also may be fabricated to have a diagonal active area to facilitate contact of two adjacent pixels with the single column line and allow linear row select lines, reset lines and column lines.

摘要翻译： 一种成像装置，其形成为具有连接到公共列线的行中的两个相邻像素的CMOS半导体集成电路。 通过使行的相邻像素共享列线，CMOS成像器电路消除了允许制造较小成像器的传统成像器的一半列线。 成像装置还可以被制造成具有对角线有源区域以促进两个相邻像素与单列线的接触，并允许线性行选择线，复位线和列线。

公开(公告)号：US20070200181A1

公开(公告)日：2007-08-30

申请号：US11797194

申请日：2007-05-01

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L29/76

CPC分类号： H01L27/14683 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14643

摘要： A pixel cell having a photo-conversion device at a surface of a substrate and at least one contact area from which charge or a signal is output or received. A first insulating layer is located over the photo-conversion device and the at least one contact area. The pixel cell further includes at least one conductor in contact with the at least one contact area. The conductor includes a polysilicon material extending through the first insulating layer and in contact with the at least one contact area. Further, a conductive material, which includes at least one of a silicide and a refractory metal, can be over and in contact with the polysilicon material.

公开(公告)号：US20070166854A1

公开(公告)日：2007-07-19

申请号：US11717739

申请日：2007-03-14

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L21/00

CPC分类号： H01L27/14618 ,  H01L21/76819 ,  H01L21/76837 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14687 ,  H01L2924/0002 ,  H01L2924/00

摘要： A pixel cell is formed by locating a first passivation layer over the final layer of metal lines. Subsequently, the uneven, non-uniform passivation layer is subjected to a planarization process such as chemical mechanical polishing, mechanical abrasion, or etching. A spin-on-glass layer may be deposited over the non-uniform passivation layer prior to planarization. Once a uniform, flat first passivation layer is achieved over the final metal, a second passivation layer, a color filter array, or a lens forming layer with uniform thickness is formed over the first passivation layer. The passivation layers can be oxide, nitride, a combination of oxide and nitride, or other suitable materials. The color filter array layer may also undergo a planarization process prior to formation of the lens forming layer. The present invention is also applicable to other devices.

摘要翻译： 通过在金属线的最终层上定位第一钝化层来形成像素单元。 随后，对不均匀的不均匀的钝化层进行化学机械抛光，机械磨蚀或蚀刻等平面化处理。 在平坦化之前，可以在非均匀钝化层上沉积旋涂玻璃层。 一旦在最终金属上实现均匀的平坦的第一钝化层，则在第一钝化层上形成第二钝化层，滤色器阵列或具有均匀厚度的透镜形成层。 钝化层可以是氧化物，氮化物，氧化物和氮化物的组合，或其它合适的材料。 在形成透镜形成层之前，滤色器阵列层也可以进行平坦化处理。 本发明也适用于其他装置。

公开(公告)号：US20070096241A1

公开(公告)日：2007-05-03

申请号：US11589206

申请日：2006-10-30

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L31/06

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14689 ,  H01L31/035272

摘要： A pixel cell with controlled leakage is formed by modifying the location and gate profile of a high dynamic range (HDR) transistor. The HDR transistor may have the gate profile of a transfer gate or a reset gate. The HDR transistor may be located on a side of the photodiode that is the same, opposite to, or perpendicular to the transfer gate. The leakage through the HDR transistor may be controlled by modifying the photodiode implants around the transistor. The photodiode implants at the HDR transistor may be placed similarly to the implants at the transfer gate. However, when the photodiode implants are moved away from the HDR transistor, leakage is reduced. When the photodiode implants are moved farther under the HDR transistor, leakage is increased to the extent desirable. The leakage through the HDR transistor may also be controlled by applying a voltage across the transistor.

摘要翻译： 具有受控泄漏的像素单元通过修改高动态范围（HDR）晶体管的位置和栅极分布来形成。 HDR晶体管可以具有传输门或复位栅的栅极分布。 HDR晶体管可以位于与传输门相同或垂直的光电二极管的一侧。 可以通过修改晶体管周围的光电二极管植入来控制通过HDR晶体管的泄漏。 在HDR晶体管处的光电二极管植入物可以类似于在传输门处的植入物放置。 然而，当光电二极管植入物远离HDR晶体管时，漏电减少。 当光电二极管植入物在HDR晶体管下移动得更远时，泄漏增加到期望的程度。 也可以通过在晶体管两端施加电压来控制通过HDR晶体管的泄漏。