公开(公告)号：US20050163695A1

公开(公告)日：2005-07-28

申请号：US10763365

申请日：2004-01-23

申请人： James Hart ,  Philip Henderson ,  Howard Withers ,  Madhukar Rao ,  Hoshang Subawalla

发明人： James Hart ,  Philip Henderson ,  Howard Withers ,  Madhukar Rao ,  Hoshang Subawalla

IPC分类号： B01D53/14 ,  B01J20/02 ,  B01J20/04 ,  B01J20/06 ,  B01J20/08 ,  B01J20/10 ,  B01J20/18 ,  C01B7/19 ,  C01B7/20 ,  C01B9/08 ,  C01B21/04 ,  C01B21/083 ,  C01G41/04

CPC分类号： C01G41/04 ,  C01B7/195 ,  C01B9/08 ,  C01B21/0837

摘要： This invention describes an improvement in a process for purifying a nitrogen trifluoride (NF3) stream containing unreacted F2, HF, and nitrogen oxides from an NF3 reactor wherein the F2, and HF are removed and then the nitrogen oxides removed by adsorption. The improvement in the process resides in selectively removing the F2 from said NF3 stream without generating oxygen difluoride, removing HF and then removing said nitrogen oxides by adsorption. Further purification can be effected as desired.

摘要翻译： 本发明描述了一种从NF 3纯化含有未反应的F 2 H 2，HF和氮氧化物的三氟化氮（NF 3 H 3）流的方法的改进， / SUB>反应器，其中除去F 2 H和HF，然后通过吸附除去氮氧化物。 该方法的改进在于从所述NF 3 N流中选择性除去F 2 O而不产生二氟化氧，除去HF，然后通过吸附除去所述氮氧化物。 可以根据需要进一步纯化。

公开(公告)号：US20050191854A1

公开(公告)日：2005-09-01

申请号：US10788223

申请日：2004-02-26

申请人： Howard Withers ,  Philip Henderson

发明人： Howard Withers ,  Philip Henderson

IPC分类号： C22B3/24 ,  C22B41/00 ,  H01L21/44

CPC分类号： C22B41/00 ,  C22B3/24 ,  Y02P10/234

摘要： A process and system for the synthesis and/or purification of crude germane to provide a purified germane product are disclosed herein. In one aspect of the present invention, there is provided a process for making a purified germane product containing less than 1 volume percent of one or more germanium-containing impurities comprising: providing a crude germane fluid; passing at least a portion of the crude germane fluid through a first adsorbent which selectively adsorbs water and carbon dioxide contained therein and withdrawing therefrom a partially purified germane fluid; passing at least a portion of the partially purified germane fluid through a second adsorbent which selectively adsorbs the one or more germanium-containing impurities contained therein and withdrawing therefrom a hydrogen-enriched purified germane fluid; and separating the purified germane product hydrogen from the hydrogen-enriched purified germane fluid.

摘要翻译： 本文公开了用于合成和/或纯化粗锗烷以提供纯化的锗烷产物的方法和系统。 在本发明的一个方面，提供了一种制备含有少于1体积％的一种或多种含锗杂质的纯化的锗烷产物的方法，包括：提供粗锗烷流体; 使至少一部分粗锗烷流体通过第一吸附剂，该第一吸附剂选择性地吸附其中含有的水和二氧化碳并从其中提取部分纯化的锗烷流体; 使部分纯化的锗烷流体的至少一部分通过第二吸附剂，所述第二吸附剂选择性地吸附其中含有的一种或多种含锗杂质并从其中提取富含氢的纯化的锗烷流体; 并将纯化的锗烷产物氢与富氢纯化的锗烷流体分离。

公开(公告)号：US20050014383A1

公开(公告)日：2005-01-20

申请号：US10619922

申请日：2003-07-15

申请人： Bing Ji ,  Stephen Motika ,  Robert Syvret ,  Peter Badowski ,  Eugene Karwacki ,  Howard Withers ,  Ronald Pearlstein

发明人： Bing Ji ,  Stephen Motika ,  Robert Syvret ,  Peter Badowski ,  Eugene Karwacki ,  Howard Withers ,  Ronald Pearlstein

IPC分类号： H01L21/3065 ,  C09K13/08 ,  H01L21/311 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31116

摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising: a fluorocarbon gas, a fluorine-containing oxidizer gas selected from the group consisting of a hypofluorite, a fluoroperoxide, a fluorotrioxide, and combinations thereof; and optionally an inert diluent gas. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to form active species that at least partially react with and remove at least a portion of the dielectric material.

摘要翻译： 本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。 具体地说，在一个实施方案中，提供了一种用于蚀刻层状基板中的电介质材料的混合物，包括：碳氟化合物气体，选自次氟酸盐，氟过氧化物，氟三氧化物及其组合的含氟氧化剂气体 ; 和任选的惰性稀释气体。 本发明的混合物可以在足以形成至少部分地与电介质材料的至少一部分反应并除去介电材料的至少一部分的活性物质的条件下与包含电介质材料的层状基板接触。

公开(公告)号：US20070224829A1

公开(公告)日：2007-09-27

申请号：US11693302

申请日：2007-03-29

申请人： Bing Ji ,  Stephen Motika ,  Robert Syvret ,  Peter Badowski ,  Eugene Karwacki ,  Howard Withers ,  Ronald Pearlstein

发明人： Bing Ji ,  Stephen Motika ,  Robert Syvret ,  Peter Badowski ,  Eugene Karwacki ,  Howard Withers ,  Ronald Pearlstein

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31116

摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising: a fluorocarbon gas, a fluorine-containing oxidizer gas selected from the group consisting of a hypofluorite, a fluoroperoxide, a fluorotrioxide, and combinations thereof; and optionally an inert diluent gas. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to form active species that at least partially react with and remove at least a portion of the dielectric material.

摘要翻译： 本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。 具体地说，在一个实施方案中，提供了一种用于蚀刻层状基板中的介电材料的混合物，包括：碳氟化合物气体，选自次氟酸盐，氟过氧化物，氟三氧化物及其组合的含氟氧化剂气体 ; 和任选的惰性稀释气体。 本发明的混合物可以在足以形成至少部分地与电介质材料的至少一部分反应并除去介电材料的至少一部分的活性物质的条件下与包含电介质材料的层状基板接触。