公开(公告)号：US20100061150A1

公开(公告)日：2010-03-11

申请号：US12318872

申请日：2009-01-12

申请人： Hsin-Hsien Wu ,  Yu-Mao Kao ,  Yung-Li Ji ,  Chih-Nan Yen ,  Fu-Ja Shone

发明人： Hsin-Hsien Wu ,  Yu-Mao Kao ,  Yung-Li Ji ,  Chih-Nan Yen ,  Fu-Ja Shone

IPC分类号： G11C16/04 ,  G11C16/06 ,  G11C5/14

CPC分类号： G11C16/349

摘要： A flash memory system includes a path selector to determine to write to a non-volatile memory, a volatile memory or both the non-volatile memory and the volatile memory when the flash memory system is to write data. A record is stored in the non-volatile memory which is updated the status of the non-volatile memory after each one or more writing operations. When the flash memory system is powered on after a power loss, it could be recovered to a command executed prior to the power loss or to any checkpoint prior to the power loss by using the record.

摘要翻译： 闪速存储器系统包括路径选择器，用于在闪存系统要写入数据时确定写入非易失性存储器，易失性存储器或非易失性存储器和易失性存储器。 一个记录被存储在非易失性存储器中，在每个一个或多个写入操作之后更新非易失性存储器的状态。 当闪存系统在掉电后上电时，可以将其恢复到在掉电前执行的命令，或者通过使用该记录恢复到断电前的任何检查点。

公开(公告)号：US07911840B2

公开(公告)日：2011-03-22

申请号：US12318872

申请日：2009-01-12

申请人： Hsin-Hsien Wu ,  Yu-Mao Kao ,  Yung-Li Ji ,  Chih-Nan Yen ,  Fu-Ja Shone

发明人： Hsin-Hsien Wu ,  Yu-Mao Kao ,  Yung-Li Ji ,  Chih-Nan Yen ,  Fu-Ja Shone

IPC分类号： G11C14/00

CPC分类号： G11C16/349

摘要： A flash memory system includes a path selector to determine to write to a non-volatile memory, a volatile memory or both the non-volatile memory and the volatile memory when the flash memory system is to write data. A record is stored in the non-volatile memory which is updated the status of the non-volatile memory after each one or more writing operations. When the flash memory system is powered on after a power loss, it could be recovered to a command executed prior to the power loss or to any checkpoint prior to the power loss by using the record.

摘要翻译： 闪速存储器系统包括路径选择器，用于在闪存系统要写入数据时确定写入非易失性存储器，易失性存储器或非易失性存储器和易失性存储器。 一个记录被存储在非易失性存储器中，在每个一个或多个写入操作之后更新非易失性存储器的状态。 当闪存系统在掉电后上电时，可以将其恢复到在掉电前执行的命令，或者通过使用该记录恢复到断电前的任何检查点。

公开(公告)号：US07839684B2

公开(公告)日：2010-11-23

申请号：US12382204

申请日：2009-03-11

申请人： Yu-Mao Kao ,  Yung-Li Ji ,  Chih-Nan Yen ,  Fu-Ja Shone

发明人： Yu-Mao Kao ,  Yung-Li Ji ,  Chih-Nan Yen ,  Fu-Ja Shone

IPC分类号： G11C16/00

CPC分类号： G11C29/88 ,  G11C29/82

摘要： The block groups of a multiple data channel flash memory storage device are detected for defective blocks. The block group containing any defective blocks is divided into subgroups, each of which contains only defective blocks or only good blocks. The subgroups containing only good blocks are selected to establish a new block group having the same amount of blocks as that of the original block groups.

摘要翻译： 针对缺陷块检测多数据通道闪存存储设备的块组。 包含任何缺陷块的块组被划分为子组，每个子组仅包含缺陷块或仅包含好的块。 选择仅包含好的块的子组以建立具有与原始块组相同的块数量的新块组。

公开(公告)号：US20090198919A1

公开(公告)日：2009-08-06

申请号：US12024149

申请日：2008-02-01

申请人： Yung-Li Ji ,  Shih Chieh Tai ,  Chih Nan Yen ,  Fu-Ja Shone

发明人： Yung-Li Ji ,  Shih Chieh Tai ,  Chih Nan Yen ,  Fu-Ja Shone

IPC分类号： G06F12/00

CPC分类号： G06F3/0634 ,  G06F1/3221 ,  G06F1/3268 ,  G06F3/0625 ,  G06F3/0679 ,  Y02D10/154 ,  Y02D50/20

摘要： A non-volatile memory device, and a method for accessing the non-volatile memory device are provided. The non-volatile memory device is connected to a host via a bus. The non-volatile memory device comprises an MCU. By independently processing the particular commands using only the auxiliary circuit, the MCU can cease to operate, thus saving power. By setting the bus into power saving mode when the non-volatile memory device is busy, the host and the non-volatile memory device would not communicate mutually, thus, saving power.

摘要翻译： 提供非易失性存储器件，以及用于访问非易失性存储器件的方法。 非易失性存储器件通过总线连接到主机。 非易失性存储器件包括MCU。 通过仅使用辅助电路独立处理特定命令，MCU可以停止工作，从而节省电力。 通过在非易失性存储器件忙时将总线设置为省电模式，主机和非易失性存储器件将不会相互通信，从而节省电力。

公开(公告)号：US08032690B2

公开(公告)日：2011-10-04

申请号：US12024149

申请日：2008-02-01

申请人： Yung-Li Ji ,  Shih Chieh Tai ,  Chih Nan Yen ,  Fu-Ja Shone

发明人： Yung-Li Ji ,  Shih Chieh Tai ,  Chih Nan Yen ,  Fu-Ja Shone

IPC分类号： G06F12/00 ,  G06F13/00

CPC分类号： G06F3/0634 ,  G06F1/3221 ,  G06F1/3268 ,  G06F3/0625 ,  G06F3/0679 ,  Y02D10/154 ,  Y02D50/20

摘要： A non-volatile memory device, and a method for accessing the non-volatile memory device are provided. The non-volatile memory device is connected to a host via a bus. The non-volatile memory device comprises an MCU. By independently processing the particular commands using only the auxiliary circuit, the MCU can cease to operate, thus saving power. By setting the bus into power saving mode when the non-volatile memory device is busy, the host and the non-volatile memory device would not communicate mutually, thus, saving power.

摘要翻译： 提供非易失性存储器件，以及用于访问非易失性存储器件的方法。 非易失性存储器件通过总线连接到主机。 非易失性存储器件包括MCU。 通过仅使用辅助电路独立处理特定命令，MCU可以停止工作，从而节省电力。 通过在非易失性存储器件忙时将总线设置为省电模式，主机和非易失性存储器件将不会相互通信，从而节省电力。

公开(公告)号：US20100100663A1

公开(公告)日：2010-04-22

申请号：US12255633

申请日：2008-10-21

申请人： Yu-Mao Kao ,  Yung-Li Ji ,  Chih-Nan Yen ,  Fuja Shone

发明人： Yu-Mao Kao ,  Yung-Li Ji ,  Chih-Nan Yen ,  Fuja Shone

IPC分类号： G06F12/02

CPC分类号： G06F12/0246 ,  G06F2212/7211

摘要： A wear leveling limit and/or an overall erase count threshold used for activating wear leveling in a non-volatile memory may be adjusted by determining a stage according to a highest erase count, and determining the wear leveling limit and/or the overall erase count threshold corresponding to the stage. Wear leveling may then be performed according to the wear leveling limit and/or the overall erase count threshold.

摘要翻译： 用于激活非易失性存储器中的磨损均衡的磨损均衡限制和/或整体擦除计数阈值可以通过根据最高擦除次数确定一个级，并且确定磨损平衡极限和/或整体擦除计数 阈值对应于舞台。 然后可以根据磨损平衡极限和/或总体擦除次数阈值进行磨损平衡。

公开(公告)号：US08082386B2

公开(公告)日：2011-12-20

申请号：US12255633

申请日：2008-10-21

申请人： Yu-Mao Kao ,  Yung-Li Ji ,  Chih-Nan Yen ,  Fuja Shone

发明人： Yu-Mao Kao ,  Yung-Li Ji ,  Chih-Nan Yen ,  Fuja Shone

IPC分类号： G06F12/02

CPC分类号： G06F12/0246 ,  G06F2212/7211

摘要： A wear leveling limit and/or an overall erase count threshold used for activating wear leveling in a non-volatile memory may be adjusted by determining a stage according to a highest erase count, and determining the wear leveling limit and/or the overall erase count threshold corresponding to the stage. Wear leveling may then be performed according to the wear leveling limit and/or the overall erase count threshold.

摘要翻译： 用于激活非易失性存储器中的磨损均衡的磨损均衡限制和/或整体擦除计数阈值可以通过根据最高擦除次数确定一个级，并且确定磨损平衡极限和/或整体擦除次数 阈值对应于舞台。 然后可以根据磨损平衡极限和/或总体擦除次数阈值进行磨损平衡。

公开(公告)号：US20090106472A1

公开(公告)日：2009-04-23

申请号：US12073283

申请日：2008-03-04

申请人： Yung-Li Ji ,  Chin-Nan Yen ,  Fu-Ja Shone

发明人： Yung-Li Ji ,  Chin-Nan Yen ,  Fu-Ja Shone

IPC分类号： G06F13/14

CPC分类号： G06F13/385 ,  Y02D10/14 ,  Y02D10/151

摘要： A virtual SATA port multiplier and a virtual SATA device are provided for a SATA system. The virtual SATA port multiplier uses a SATA physical layer for data transfer between it and a SATA host, and a non-physical layer for direct data transfer between it and the virtual SATA device. Since the data transfer between the virtual SATA port multiplier and the virtual SATA device is not carried out by way of SATA physical layers, no physical layer circuits are required accordingly, thereby reducing the manufacturing cost, power consumption and hardware size of the SATA system.

摘要翻译： 为SATA系统提供虚拟SATA端口倍增器和虚拟SATA设备。 虚拟SATA端口倍增器使用SATA物理层在其与SATA主机之间进行数据传输，以及用于在其与虚拟SATA设备之间进行直接数据传输的非物理层。 由于虚拟SATA端口倍增器与虚拟SATA设备之间的数据传输不是通过SATA物理层进行的，因此不需要物理层电路，从而降低了SATA系统的制造成本，功耗和硬件尺寸。

公开(公告)号：US20090164698A1

公开(公告)日：2009-06-25

申请号：US12155410

申请日：2008-06-04

申请人： Yung-Li Ji ,  Chin-Nan Yen ,  Fu-Ja Shone

发明人： Yung-Li Ji ,  Chin-Nan Yen ,  Fu-Ja Shone

IPC分类号： G06F12/00

CPC分类号： G06F12/0246 ,  G06F3/0613 ,  G06F3/0656 ,  G06F3/0676 ,  G06F3/0679 ,  G11C16/10

摘要： A nonvolatile storage device buffers multiple write commands and selects one or more therefrom according to a choosing policy to execute in priority, so as to increase the probability of continuously executing write commands corresponding to an identical smallest erasable unit, thereby reducing the frequency of backup, erasing and copyback operations and improving the efficiency of the nonvolatile storage device.

摘要翻译： 非易失性存储装置根据优先执行的选择策略缓冲多个写入命令并从中选择一个或多个写入命令，从而增加连续执行对应于相同最小可擦除单元的写入命令的概率，从而降低备份频率， 擦除和复制操作，并提高非易失性存储设备的效率。

公开(公告)号：US08583854B2

公开(公告)日：2013-11-12

申请号：US12155410

申请日：2008-06-04

申请人： Yung-Li Ji ,  Chin-Nan Yen ,  Fu-Ja Shone

发明人： Yung-Li Ji ,  Chin-Nan Yen ,  Fu-Ja Shone

IPC分类号： G11C16/10 ,  G06F12/00 ,  G06F3/06

CPC分类号： G06F12/0246 ,  G06F3/0613 ,  G06F3/0656 ,  G06F3/0676 ,  G06F3/0679 ,  G11C16/10

摘要： A nonvolatile storage device buffers multiple write commands and selects one or more therefrom according to a choosing policy to execute in priority, so as to increase the probability of continuously executing write commands corresponding to an identical smallest erasable unit, thereby reducing the frequency of backup, erasing and copyback operations and improving the efficiency of the nonvolatile storage device.