DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEANING
    4.
    发明申请
    DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEANING 审中-公开
    在现场清洁后使用NH3净化的MOCVD室的去除

    公开(公告)号:US20100273291A1

    公开(公告)日:2010-10-28

    申请号:US12731030

    申请日:2010-03-24

    IPC分类号: H01L51/40

    摘要: Embodiments of the present invention generally relate to methods and apparatus for removing unwanted deposition build-up from one more interior surfaces of a substrate processing chamber after a substrate is processed in a chamber to form, for example, Group III-V materials by metal-organic chemical vapor deposition (MOCVD) deposition processes and/or hydride vapor phase epitaxial (HVPE) deposition processes. In one embodiment, a method for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber is provided. The method comprises depositing one or more Group III containing layers over a substrate disposed in the substrate processing chamber, transferring the substrate out of the substrate processing chamber, and pulsing a halogen containing gas into the substrate processing chamber to remove at least a portion of the unwanted deposition build-up from one or more interior surfaces of the substrate processing chamber.

    摘要翻译: 本发明的实施方案一般涉及用于在衬底在腔室中处理以形成例如III-V族材料之后,从衬底处理室的多个内表面去除不想要的沉积积累的方法和装置, 有机化学气相沉积(MOCVD)沉积工艺和/或氢化物气相外延(HVPE)沉积工艺。 在一个实施例中,提供了从衬底处理室的一个或多个内表面去除不想要的沉积积聚的方法。 该方法包括在设置在衬底处理室中的衬底上沉积一个或多个含III族的层,将衬底转移到衬底处理室之外,并将含卤素的气体脉冲到衬底处理室中以去除至少一部分 从衬底处理室的一个或多个内表面积聚不需要的沉积物。