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    GAS DISTRIBUTION SHOWERHEAD WITH HIGH EMISSIVITY SURFACE
    4.
    发明申请
    GAS DISTRIBUTION SHOWERHEAD WITH HIGH EMISSIVITY SURFACE 审中-公开
    具有高功率表面的气体分配淋浴

    公开(公告)号：US20120052216A1

    公开(公告)日：2012-03-01

    申请号：US13154060

    申请日：2011-06-06

    申请人： Hiroji Hanawa ,  Kyawwin Jason Maung ,  Hua Chung ,  Jie Cui ,  David Bour ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    发明人： Hiroji Hanawa ,  Kyawwin Jason Maung ,  Hua Chung ,  Jie Cui ,  David Bour ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    IPC分类号： C23C16/48

    CPC分类号： C23C16/45565 ,  C23C16/45574 ,  C23C16/481 ,  C23C16/52

    摘要： Embodiments of the present invention provide methods and apparatus for surface coatings applied to process chamber components utilized in chemical vapor deposition processes. In one embodiment, the apparatus provides a showerhead apparatus comprising a body, a plurality of conduits extending through the body, each of the plurality of conduits having an opening extending to a processing surface of the body, and a coating disposed on the processing surface, the coating being about 50 microns to about 200 microns thick and comprising a coefficient of emissivity of about 0.8, an average surface roughness of about 180 micro-inches to about 220 micro-inches, and a porosity of about 15% or less.

    摘要翻译： 本发明的实施例提供了应用于化学气相沉积工艺中使用的处理腔室部件的表面涂层的方法和装置。 在一个实施例中，该装置提供一种喷头装置，其包括主体，延伸穿过主体的多个导管，多个导管中的每一个具有延伸到主体的处理表面的开口，以及设置在处理表面上的涂层， 该涂层为约50微米至约200微米厚，并且包括约0.8的发射率系数，约180微英寸至约220微英寸的平均表面粗糙度，以及约15％或更小的孔隙率。

    PROCESSING SYSTEMS AND APPARATUSES HAVING A SHAFT COVER
    5.
    发明申请
    PROCESSING SYSTEMS AND APPARATUSES HAVING A SHAFT COVER 审中-公开
    加工系统和具有轴承盖的装置

    公开(公告)号：US20120073503A1

    公开(公告)日：2012-03-29

    申请号：US13098241

    申请日：2011-04-29

    申请人： Juno Yu-Ting Huang ,  Sang Won Kang ,  David H. Quach ,  Wei-Yung Hsu

    发明人： Juno Yu-Ting Huang ,  Sang Won Kang ,  David H. Quach ,  Wei-Yung Hsu

    IPC分类号： C30B25/08 ,  C30B25/12

    CPC分类号： C30B25/08 ,  C30B25/12 ,  C30B29/403

    摘要： Apparatus and systems are disclosed for processing a substrate. In an embodiment, a system includes a processing chamber, which includes a substrate support to support the substrate. The chamber further includes a plate member positioned below the substrate support and designed to improve heating efficiency within the processing chamber. The processing chamber further includes a lower dome positioned below the plate member. The plate member is designed to prevent a coating from being deposited on the lower dome during processing conditions. The plate member is designed to prevent particles and debris from falling below the plate member. The plate member is designed to improve heating uniformity between the plate member and the substrate within the processing chamber.

    摘要翻译： 公开了用于处理衬底的装置和系统。 在一个实施例中，系统包括处理室，其包括用于支撑衬底的衬底支撑件。 腔室还包括位于衬底支撑件下方并被设计成提高处理室内的加热效率的板构件。 处理室还包括位于板构件下方的下拱顶。 板构件被设计成防止在加工条件下涂层沉积在下圆顶上。 板构件被设计成防止颗粒和碎屑落在板构件下方。 板构件被设计成改善处理室内的板构件和衬底之间的加热均匀性。

    GROWTH OF III-V LED STACKS USING NANO MASKS
    6.
    发明申请
    GROWTH OF III-V LED STACKS USING NANO MASKS 审中-公开
    使用NANO MASKS的III-V LED堆叠的增长

    公开(公告)号：US20120235115A1

    公开(公告)日：2012-09-20

    申请号：US13355255

    申请日：2012-01-20

    申请人： Sang Won Kang ,  Jie Su ,  Tuoh-Bin NG ,  David Bour ,  Wei-Yung Hsu

    发明人： Sang Won Kang ,  Jie Su ,  Tuoh-Bin NG ,  David Bour ,  Wei-Yung Hsu

    IPC分类号： H01L21/205 ,  C23C16/34 ,  C23C16/52 ,  H01L33/06

    CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/02 ,  H01L33/20

    摘要： Methods, semiconductor material stacks and equipment for manufacture of light emitting diodes (LEDs) with improve crystal quality. A growth stopper is deposited between nuclei for a group III-V material, such as GaN, to form a nano mask. The group III-V material is laterally overgrown from a region of the nuclei not covered by the nano mask to form a continuous material layer with reduced dislocation density in preparation for subsequent growth of n-type and p-type layers of the LED. The lateral overgrowth from the nuclei may further recover the surface morphology of the buffer layer despite the presence of the nano mask. Presence of the growth stopper may further result in void formation on a substrate side of an LED stack to improve light extraction efficiency.

    摘要翻译： 方法，用于制造具有改善晶体质量的发光二极管（LED）的半导体材料堆叠和设备。 在诸如GaN的III-V族材料的核之间沉积生长塞，以形成纳米掩模。 III-V族材料从未被纳米掩模覆盖的核的区域横向长满，以形成具有降低的位错密度的连续材料层，以准备LED的n型和p型层的随后生长。 即使存在纳米掩模，来自核的侧向过度生长也可进一步恢复缓冲层的表面形态。 生长停止剂的存在可能进一步导致在LED堆叠的衬底侧上的空隙形成以提高光提取效率。

    ENHANCED MAGNESIUM INCORPORATION INTO GALLIUM NITRIDE FILMS THROUGH HIGH PRESSURE OR ALD-TYPE PROCESSING
    8.
    发明申请
    ENHANCED MAGNESIUM INCORPORATION INTO GALLIUM NITRIDE FILMS THROUGH HIGH PRESSURE OR ALD-TYPE PROCESSING 审中-公开
    通过高压或ALD型加工将增强的镁合金纳入氮化铝膜

    公开(公告)号：US20120315741A1

    公开(公告)日：2012-12-13

    申请号：US13485671

    申请日：2012-05-31

    申请人： Jie Su ,  Jiang Lu ,  Hua Chung ,  Wei-Yung Hsu ,  David Bour

    发明人： Jie Su ,  Jiang Lu ,  Hua Chung ,  Wei-Yung Hsu ,  David Bour

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02579 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0262

    摘要： Enhanced magnesium incorporation into gallium nitride films through high pressure or ALD-type processing is described. In an example, a method of fabricating a group III-nitride film includes flowing a group III precursor, a nitrogen precursor, and a p-type dopant precursor into a reaction chamber having a substrate therein. A p-type doped group III-nitride layer is formed in the reaction chamber, above the substrate, while a total pressure in the reaction chamber is approximately in the range of 300-760 Torr.

    摘要翻译： 描述了通过高压或ALD型处理将镁掺入到氮化镓膜中。 在一个实例中，制造III族氮化物膜的方法包括使III族前体，氮前体和p型掺杂剂前体流入具有衬底的反应室中。 在反应室中形成p型掺杂III族氮化物层，同时反应室中的总压力大约在300-760乇的范围内。