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公开(公告)号：US10860944B2
公开(公告)日：2020-12-08
申请号：US16234083
申请日：2018-12-27
发明人： Wen Zhang , Chen-Xiong Zhang
摘要： A phase shifter, a quantum logic gate apparatus, an optical quantum computing apparatus, and a phase shift method, where the phase shifter includes an optical resonant cavity and a quantum point, where a resonance frequency of the optical resonant cavity is ωc, the quantum point is located in the optical resonant cavity, and a transition frequency of the quantum point is ωx, the quantum point and the optical resonant cavity are coupled to form a coupled system, and a transition energy difference of the coupled system is determined by ωc, ωx, and a coupling strength between the quantum point and the optical resonant cavity (g), and ωx is set.
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公开(公告)号：US10477611B2
公开(公告)日：2019-11-12
申请号：US15640088
申请日：2017-06-30
发明人： Junren Chang , Yuchun Wu , Shulan Feng , Chen-Xiong Zhang
IPC分类号： H04W24/02 , H04W76/25 , H04W76/10 , H04W76/27 , H04W36/24 , H04W36/36 , H04W36/00 , H04L12/24 , H04W28/18 , H04W88/06
摘要： Embodiments of the present invention provide a wireless communications method, apparatus, and system. A terminal is provided. The terminal sets up a connection to a first base station, and stays in always connected mode. Therefore, when the terminal moves in a dense network, handovers of the first base station can be reduced. Further, when the terminal moves in the dense network, frequent signaling interaction is reduced, paging load in the entire network is reduced, and an end-to-end delay in service setup and transmission is reduced.
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公开(公告)号：US20190273427A1
公开(公告)日：2019-09-05
申请号：US16416778
申请日：2019-05-20
发明人： Yangyang Tang , Jian Zhang , Hu Liu , Cong Yao , Xinru Wang , Chen-Xiong Zhang
摘要： A voltage regulation circuit includes an obtainer that is configured to obtain load information of a corresponding load and output the load information to a corresponding controller. The corresponding controller generates a switch control signal based on the load information and outputs the switch controller to at least one switch. The at least one switch regulates, based on the accurate switch control signal, a voltage input to the corresponding load.
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公开(公告)号：US10270391B2
公开(公告)日：2019-04-23
申请号：US15581445
申请日：2017-04-28
发明人： Yangyang Tang , Chen-Xiong Zhang
摘要： A differential input amplification-stage circuit comprises a voltage unit, first and second bulk-driven transistors, first and second mirror current sources, and a differential amplifier unit. The first and the second bulk-driven transistors respectively receive first and second input voltages, and converts the first and the second input voltages into first and second output currents. The differential amplifier unit separately outputs first and second adjustment currents under an action of voltages output by the first to the third voltage output ends. The first and the second mirror current sources respectively output first and second predetermined currents according to the first output current and the first adjustment current, and the second output current and the second adjustment current, so as to maintain transconductance constancy of the differential input amplification-stage circuit. Therefore, output stability is improved.
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公开(公告)号：US09584109B2
公开(公告)日：2017-02-28
申请号：US14533748
申请日：2014-11-05
发明人： Yangyang Tang , Chen-Xiong Zhang
IPC分类号： H03K17/0412 , H03K17/041 , H02M1/088 , H03K17/687 , H03K17/74 , H03K17/12 , H02M3/158 , H02M1/00
CPC分类号： H03K17/04106 , H02M1/088 , H02M3/158 , H02M2001/009 , H03K17/04123 , H03K17/12 , H03K17/6872 , H03K17/74 , H03K2217/009 , Y02B70/1425
摘要： The present invention relates to a voltage regulator and a resonant gate driver of the voltage regulator, where the resonant gate driver is configured to drive a first power transistor and a second power transistor and includes: a first control gateway, a second control gateway, and an inductor, where: a first end of the first control gateway is connected to a first end of the second control gateway; a second end of the first control gateway is connected to a second end of the second control gateway by using the inductor; and a third end of the first control gateway is connected to the first power transistor, and a third end of the second control gateway is connected to the second power transistor. The resonant gate driver according to an embodiment of the present invention can reduce a driving period and increase a response speed.
摘要翻译： 本发明涉及电压调节器的电压调节器和谐振栅极驱动器，其中谐振栅极驱动器被配置为驱动第一功率晶体管和第二功率晶体管，并且包括：第一控制网关，第二控制网关和 电感器，其中：第一控制网关的第一端连接到第二控制网关的第一端; 第一控制网关的第二端通过使用电感器连接到第二控制网关的第二端; 并且第一控制网关的第三端连接到第一功率晶体管，并且第二控制网关的第三端连接到第二功率晶体管。 根据本发明的实施例的谐振栅极驱动器可以减少驱动周期并增加响应速度。
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公开(公告)号：US20190392871A1
公开(公告)日：2019-12-26
申请号：US16559959
申请日：2019-09-04
发明人： Yangyang Tang , Enyi Yao , Chen-Xiong Zhang
IPC分类号： G11C5/14 , G11C11/4074 , G11C16/30 , G11C7/10 , G05F1/575
摘要： A voltage regulation circuit includes a first comparison and control unit and a second comparison and control unit. The first comparison and control unit is connected to a first switch unit, determine a first bias voltage based on a first output voltage, a first reference voltage, and a second reference voltage, and control a value of an equivalent resistance of the first switch unit using the first bias voltage. The second comparison and control unit is connected to a third switch unit and the second switch unit, determine a second bias voltage based on the first output voltage, a second output voltage, and a third reference voltage, and control values of equivalent resistances of the third switch unit and the second switch unit using the second bias voltage.
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7.发明申请公开(公告)号：US20190156235A1
公开(公告)日：2019-05-23
申请号：US16234083
申请日：2018-12-27
发明人： Wen Zhang , Chen-Xiong Zhang
摘要： A phase shifter, a quantum logic gate apparatus, an optical quantum computing apparatus, and a phase shift method, where the phase shifter includes an optical resonant cavity and a quantum point, where a resonance frequency of the optical resonant cavity is ωc, the quantum point is located in the optical resonant cavity, and a transition frequency of the quantum point is ωx, the quantum point and the optical resonant cavity are coupled to form a coupled system, and a transition energy difference of the coupled system is determined by ωc, ωx, and a coupling strength between the quantum point and the optical resonant cavity (g), and ωx is set.
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公开(公告)号：US20170243960A1
公开(公告)日：2017-08-24
申请号：US15587781
申请日：2017-05-05
发明人： Xichao Yang , Jing Zhao , Chen-Xiong Zhang
IPC分类号： H01L29/66 , H01L29/786 , H01L21/8238 , H01L29/06 , H01L29/49 , H01L27/092 , H01L29/423
CPC分类号： H01L29/66977 , H01L21/823807 , H01L21/823814 , H01L21/823828 , H01L21/823878 , H01L21/823885 , H01L27/092 , H01L29/0653 , H01L29/0676 , H01L29/08 , H01L29/42356 , H01L29/42392 , H01L29/4908 , H01L29/66356 , H01L29/7391 , H01L29/78 , H01L29/78618 , H01L29/78642 , H01L29/78651 , H01L29/78681 , H01L29/78684 , H01L29/78696
摘要： A complementary tunneling field effect transistor and a manufacturing method are disclosed, which includes: a first drain region and a first source region that are disposed on a substrate, where they include a first dopant; a first channel that is disposed on the first drain region and a second channel that is disposed on the first source region; a second source region that is disposed on the first channel and a second drain region that is disposed on the second channel, where they include a second dopant; a first epitaxial layer that is disposed on the first drain region and the second source region, and a second epitaxial layer that is disposed on the second drain region and the first source region; and a first gate stack layer that is disposed on the first epitaxial layer, and a second gate stack layer that is disposed on the second epitaxial layer.
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9.发明申请Tunneling Field Effect Transistor with New Structure and Preparation Method Thereof 有权具有新结构的隧道场效应晶体管及其制备方法公开(公告)号：US20150228768A1
公开(公告)日：2015-08-13
申请号：US14542825
申请日：2014-11-17
发明人： Jing Zhao , Xichao Yang , Chen-Xiong Zhang
CPC分类号： H01L29/66977 , H01L29/0895 , H01L29/66356 , H01L29/66477 , H01L29/7391
摘要： A tunneling field effect transistor with a new structure and a preparation method thereof are provided. The tunneling field effect transistor includes an active region between a source and a drain, a gate dielectric layer, and a gate located on a side of the gate dielectric layer deviating from the source, and a tunneling region disposed between the gate dielectric layer and the source and in contact with both the gate dielectric layer and the source. The source includes at least a first area and a second area perpendicularly connected in an “L” shape. The tunneling region is in contact with at least the first area and the second area. The gate dielectric layer is in contact with at least the tunneling region and the source.
摘要翻译： 提供了具有新结构的隧道场效应晶体管及其制备方法。 隧道场效应晶体管包括源极和漏极之间的有源区，栅极电介质层和位于偏离源极的栅极电介质层侧的栅极，以及设置在栅极介电层和栅极电介质层之间的隧道区域 源极并与栅极介电层和源极接触。 源包括至少一个以“L”形垂直连接的第一区域和第二区域。 隧道区域至少与第一区域和第二区域接触。 栅介质层至少与隧道区域和源极接触。
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公开(公告)号：US11120845B2
公开(公告)日：2021-09-14
申请号：US17171333
申请日：2021-02-09
发明人： Yangyang Tang , Enyi Yao , Chen-Xiong Zhang
摘要： A voltage regulation circuit includes a first comparison and control unit and a second comparison and control unit. The first comparison and control unit is connected to a first switch unit, determine a first bias voltage based on a first output voltage, a first reference voltage, and a second reference voltage, and control a value of an equivalent resistance of the first switch unit using the first bias voltage. The second comparison and control unit is connected to a third switch unit and the second switch unit, determine a second bias voltage based on the first output voltage, a second output voltage, and a third reference voltage, and control values of equivalent resistances of the third switch unit and the second switch unit using the second bias voltage.
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