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公开(公告)号：US11989644B2
公开(公告)日：2024-05-21
申请号：US17259191
申请日：2020-05-28
Inventor： Hao Tong , Qing Hu , Yuhui He , Xiangshui Miao
IPC: G06N3/0464 , G06N3/063 , G11C11/54 , G11C13/00
CPC classification number: G06N3/063 , G11C11/54 , G11C13/0004 , G11C13/003 , G11C2213/71 , G11C2213/77
Abstract: The disclosure discloses a three-dimensional (3D) convolution operation device and method based on a 3D phase change memory, which includes a 3D phase change memory, an input control module, a setting module, and an output control module. By using the 3D phase change memory to perform 3D convolution operation, the phase change units on the same bit line constitute a convolution kernel. Based on the multilayer stack structure, the upper and lower electrodes of the 3D phase change memory serve as the information input terminal, and they are convolved after passing through the respective phase change unit arrays, and the result of the convolution operation is superposed on the middle electrode in the form of current, thereby obtaining the sum of the convolution calculation results of the input information of the upper and lower electrodes, such that the 3D convolution operation is completed in one step.
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公开(公告)号：US11678495B2
公开(公告)日：2023-06-13
申请号：US17043672
申请日：2019-09-23
Inventor： Hao Tong , Wang Cai , Xiangshui Miao
CPC classification number: H10B63/845 , H10N70/023 , H10N70/231 , H10N70/841 , H10N70/8825 , H10N70/8828 , H10N70/823 , H10N70/826
Abstract: The disclosure belongs to the technical field of microelectronic devices and memories, and discloses a three-dimensional stacked phase change memory and a preparation method thereof. The preparation method includes: preparing a multilayer structure in which horizontal electrode layers and insulating layers are alternately stacked, then performing etching to form trenches and separated three-dimensional strip electrodes, next filling the trenches with an insulating medium, and then forming small holes at the boundary region between the three-dimensional strip electrodes and the insulating medium, thereafter sequentially depositing a phase change material on the walls of the small holes, and filling the small holes with an electrode material to prepare vertical electrodes, so as to obtain a three-dimensional stacked phase change memory stacked in multiple layers. By improving the overall process of the preparation method, the disclosure realizes the establishment of a three-dimensional phase change memory array by using a vertical electrode structure.
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公开(公告)号：US11056644B2
公开(公告)日：2021-07-06
申请号：US16679355
申请日：2019-11-11
Inventor： Xiangshui Miao , Hao Tong , Lifan Ma
Abstract: A phase-change memory cell, including, in sequence in the following order: a first electrode layer, a switching layer comprising vanadium oxide (VOx) material, a phase-change material layer, and a second electrode layer, is provided. The switching layer is adapted to control the phase-change material layer to switch between a crystalline state and an amorphous state when a voltage is applied to the first electrode layer and the second electrode layer.
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公开(公告)号：US11641748B2
公开(公告)日：2023-05-02
申请号：US17042954
申请日：2019-07-12
Inventor： Hao Tong , Da He , Xiangshui Miao
Abstract: A pretreatment method of a selector device is provided, which includes: (1) performing a first voltage scan of a selector through selecting a voltage scan range and setting a first limit current Icc1 to obtain a resistance state R1 of a sub-threshold region thereof; (2) setting an nth limit current Icc(n) and performing an nth voltage scan of the selector according to a resistance state Rn-1 of a sub-threshold region of the selector after an n−1th voltage scan to obtain a resistance state Rn of a sub-threshold region thereof, where, Icc(n-1)
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5.发明授权公开(公告)号：US11609443B2
公开(公告)日：2023-03-21
申请号：US16764403
申请日：2018-06-07
Inventor： Xiangshui Miao , Yitao Lu , Hao Tong , Yi Wang
Abstract: Disclosed in the present invention are a chalcogenide phase change material based all-optical switch and a manufacturing method therefor, relating to the field of optical communications. The all-optical switch comprises: stacked in sequence, a cover layer film, a chalcogenide phase change material film, an isolation layer film, a silicon photonic crystal, and a substrate. The silicon photonic crystal comprises a nano-porous structure such that the silicon photonic crystal has a Fano resonance effect. When the all-optical switch is used, the state of the chalcogenide phase change material film is controlled by means of laser, and the resonance state of the silicon photonic crystal is modulated to implement modulation of signal light transmissivity; the modulation range is within a communication band from 1500 nm to 1600 nm, thereby implementing an optical switch. The all-optical switch of the present invention has the characteristics of high contrast ratio, high rate and low loss.
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Patent Agency Ranking
公开(公告)号：US11437098B2
公开(公告)日：2022-09-06
申请号：US17037655
申请日：2020-09-29
Inventor： Xiangshui Miao , Qi Lin , Hao Tong
Abstract: An operating method for improving the performance of a selector device is provided, including: determining and applying a direct current (DC) or alternating current (AC) operating voltage and a limit current of the selector device, so that the selector device circulates until a off-state resistance is reduced; continuously applying the operating voltage and the limit current to the selector device, so that the selector device circulates until the off-state resistance is reduced to a minimum value; continuously applying the operating voltage and the limit current to the selector device, so that the selector device circulates until the off-state resistance is increased; continuously applying the operating voltage and the limit current to the selector device, so that the selector device circulates until the off-state resistance is increased to a maximum value; and adjusting the operating voltage and the limit current, and performing DC or AC operation pulsed operation on a selector.
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公开(公告)号：US11127901B1
公开(公告)日：2021-09-21
申请号：US16626520
申请日：2018-11-29
Inventor： Xiangshui Miao , Hao Tong , Yushan Shen , Wang Cai
Abstract: A three-dimensional stacked phase change memory and a preparation method thereof are provided. The method comprises: preparing first horizontal electrodes spaced apart from each other on a substrate; preparing first strip-shaped phase change layers, each having a central gap, between the first horizontal electrodes; preparing first selectors in the central gaps of the first strip-shaped phase change layers; preparing a first insulating layer; preparing second strip-shaped phase change layers at same vertical positions on the first insulating layer; preparing second selectors; then preparing horizontally-oriented insulating holes between the horizontal electrodes; and preparing vertical electrodes between the adjacent insulating holes, thereby forming a multilayer stacked phase change memory with a vertical structure.
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公开(公告)号：US09543510B2
公开(公告)日：2017-01-10
申请号：US13917681
申请日：2013-06-14
Inventor： Xiangshui Miao , Hao Tong , Xiaomin Cheng
IPC: H01L45/00
CPC classification number: H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/128 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/148 , H01L45/1608 , H01L45/1625
Abstract: A multi-layer phase change material, including: a multi-layer film structure. The multi-layer film structure includes a plurality of periodic units. The periodic units each includes a first single-layer film phase change material and a second single-layer film phase change material. The first single-layer film phase change material and the second single-layer film phase change material are alternately stacked. The first single-layer film phase change material includes chemical components that are different from chemical components included in the second single-layer film phase change material, or the first single-layer film phase change material includes chemical components that are the same as chemical components included in the second single-layer film phase change material and a percent composition of the chemical components included in the first single-layer film phase change material is different from a percent composition of the chemical components included in the second single-layer film phase change material.
Abstract translation: 一种多层相变材料，包括：多层膜结构。 多层膜结构包括多个周期性单元。 周期性单元各自包括第一单层膜相变材料和第二单层膜相变材料。 第一单层膜相变材料和第二单层膜相变材料交替堆叠。 第一单层膜相变材料包括与第二单层膜相变材料中包含的化学成分不同的化学成分，或者第一单层膜相变材料包含与化学成分相同的化学成分 包含在第二单层膜相变材料中的包含在第一单层膜相变材料中的化学成分的组成百分比与第二单层膜相变中包含的化学成分的组成百分比不同 材料。
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公开(公告)号：US12114583B1
公开(公告)日：2024-10-08
申请号：US18676385
申请日：2024-05-28
Inventor： Hao Tong , Jiangxi Chen , Lun Wang , Xiangshui Miao
CPC classification number: H10N70/8825 , H10B63/24 , H10N70/023 , H10N70/026 , H10N70/841
Abstract: The disclosure belongs to the field of micro-nano electronic materials, and in particular to a Se-based selector material, a selector unit, and a preparation method thereof. The Se-based selector material is a compound including Ge, Se, and B elements. The chemical formula of the Se-based selector material is (GexSe1−x)1−yByMz, in which the M element is at least one of In, Ga, Al, and Zn, and 0.1≤x≤0.9, 0.02≤y≤0.15, and 0≤z≤0.2. The problems of safety and stability of the existing material selection for the selector are solved by the selector material, the selector unit, and the preparation method thereof provided by the disclosure. In addition, the threshold voltage of the selector device prepared based on the Se-based selector material is adjustable, and the comprehensive performance is good.
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公开(公告)号：US12057158B1
公开(公告)日：2024-08-06
申请号：US18021177
申请日：2022-08-12
Inventor： Hao Tong , Binhao Wang , Xiangshui Miao
IPC: G11C11/4093 , G11C11/406 , G11C11/4096
CPC classification number: G11C11/4096 , G11C11/40603 , G11C11/4093 , G11C2211/4068
Abstract: A method for operating a dynamic memory is provided, and the method includes the following steps. A refresh operation is performed on the dynamic memory according to predetermined interval time T, an operation command is received in real time at the same time, a read operation is performed on a selected memory cell according to position information of the selected memory cell in the operation command when the operation command is received, and state data read in the read operation is temporarily stored in a read buffer. The interval time T is less than time t required for a voltage value of a capacitor in the memory cell to drop to a critical capacitor voltage value for the read operation to correctly read the state data of the memory cell during a write operation. According to operation command type information in the operation command, corresponding operations are performed on the selected memory cell.
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