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公开(公告)号：US20100140653A1
公开(公告)日：2010-06-10
申请号：US12709105
申请日：2010-02-19
Applicant: Hung-Cheng LIN , Chia-Ming LEE , Jen-Inn CHYI
Inventor： Hung-Cheng LIN , Chia-Ming LEE , Jen-Inn CHYI
IPC: H01L33/00
CPC classification number: H01L33/22
Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.
Abstract translation: 本发明公开了一种发光二极管结构及其制造方法。 在本发明中，将基板放置在溶液中以在雕刻区域上形成化学反应层; 选择性地蚀刻雕刻区域以形成多个凹陷区域并形成多个凸区域; 在衬底的元件区域和雕刻区域上外延生长半导体层结构; 通过光刻工艺将元件区域上的半导体层结构制成LED元件。
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公开(公告)号：US20090162999A1
公开(公告)日：2009-06-25
申请号：US12014200
申请日：2008-01-15
Applicant: Hung-Cheng LIN , Jen-Inn Chyi
Inventor： Hung-Cheng LIN , Jen-Inn Chyi
IPC: H01L21/36
CPC classification number: H01L21/0262 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L33/0062 , H01L33/06
Abstract: A method of growing nitride semiconductor material and particularly a method of growing Indium nitride is disclosed can increase surface flatness of a nitride semiconductor material and decrease density of V-defects therein. Further, the method can increase light emission efficiency of a quantum well or quantum dots of the produced LED as well as greatly increase yield. The method is also applicable to the fabrications of electronic devices made of nitride semiconductor material and diodes of high breakdown voltage for rectification. The method can greatly increase surface flatness of semiconductor material for HBT, thereby increasing quality of the produced semiconductor devices.
Abstract translation: 公开了一种生长氮化物半导体材料的方法，特别是生长氮化铟的方法可以增加氮化物半导体材料的表面平坦度并降低其中的V型缺陷的密度。 此外，该方法可以提高所产生的LED的量子阱或量子点的发光效率，并且大大提高产量。 该方法还适用于由氮化物半导体材料制成的电子器件和用于整流的高击穿电压的二极管的制造。 该方法可以大大增加用于HBT的半导体材料的表面平坦度，从而提高所制造的半导体器件的质量。
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公开(公告)号：US20100295017A1
公开(公告)日：2010-11-25
申请号：US12851607
申请日：2010-08-06
Applicant: Hung-Cheng LIN , Chia-Ming Lee , Jen-Inn Chyi
Inventor： Hung-Cheng LIN , Chia-Ming Lee , Jen-Inn Chyi
Abstract: The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.
Abstract translation: 本发明公开了一种发光二极管（LED）元件及其制造方法，其可以提高LED的光提取效率，其中蚀刻基板以获得具有倾斜的自然晶体面的池，并且LED外延结构选择性地 形成在盆地内。 由此，得到具有多个倾斜的LED元件。 通过倾斜，全内反射的概率降低，LED的光提取效率得到提升。
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公开(公告)号：US20090159910A1
公开(公告)日：2009-06-25
申请号：US11963558
申请日：2007-12-21
Applicant: Hung-Cheng LIN , Chia-Ming Lee , Jen-Inn Chyi
Inventor： Hung-Cheng LIN , Chia-Ming Lee , Jen-Inn Chyi
IPC: H01L21/306 , H01L33/00
CPC classification number: H01L33/22
Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.
Abstract translation: 本发明公开了一种发光二极管结构及其制造方法。 在本发明中，将基板放置在溶液中以在雕刻区域上形成化学反应层; 选择性地蚀刻雕刻区域以形成多个凹陷区域并形成多个凸区域; 在衬底的元件区域和雕刻区域上外延生长半导体层结构; 通过光刻工艺将元件区域上的半导体层结构制成LED元件。
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